Part Number Manufacturer / Brand Brife Description Part StatusFET TypeTechnologyDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsFET FeaturePower Dissipation (Max)Operating TemperatureMounting TypeSupplier Device PackagePackage / Case
Toshiba Semiconductor and Storage MOSFET N-CH 600V 61.8A TO-247 ActiveN-ChannelMOSFET (Metal Oxide)600V61.8A (Ta)10V40 mOhm @ 30.9A, 10V3.7V @ 3.1mA180nC @ 10V±30V6500pF @ 300VSuper Junction400W (Tc)150°C (TJ)Through HoleTO-247TO-247-3
Toshiba Semiconductor and Storage MOSFET N-CH 650V 5.2A IPAK ActiveN-ChannelMOSFET (Metal Oxide)650V5.2A (Ta)10V1.22 Ohm @ 2.6A, 10V3.5V @ 170µA10.5nC @ 10V±30V380pF @ 300V
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60W (Tc)150°C (TJ)Through HoleI-PAKTO-251-3 Stub Leads, IPak
Toshiba Semiconductor and Storage MOSFET N-CH 650V 5.8A IPAK-OS ActiveN-ChannelMOSFET (Metal Oxide)650V5.8A (Ta)10V1.05 Ohm @ 2.9A, 10V3.5V @ 180µA11nC @ 10V±30V390pF @ 300V
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60W (Tc)150°C (TJ)Through HoleI-PAKTO-251-3 Stub Leads, IPak
Toshiba Semiconductor and Storage MOSFET N-CH 650V 7.8A IPAK ActiveN-ChannelMOSFET (Metal Oxide)650V7.8A (Ta)10V670 mOhm @ 3.9A, 10V3.5V @ 300µA16nC @ 10V±30V570pF @ 300V
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80W (Tc)150°C (TJ)Through HoleI-PAKTO-251-3 Stub Leads, IPak
Toshiba Semiconductor and Storage MOSFET N-CH 650V 6.8A TO-220SIS ActiveN-ChannelMOSFET (Metal Oxide)650V6.8A (Ta)10V780 mOhm @ 3.4A, 10V3.5V @ 250µA15nC @ 10V±30V490pF @ 300V
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30W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
Toshiba Semiconductor and Storage MOSFET N CH 600V 5.4A IPAK ActiveN-ChannelMOSFET (Metal Oxide)600V5.4A (Ta)10V900 mOhm @ 2.7A, 10V3.7V @ 270µA10.5nC @ 10V±30V380pF @ 300VSuper Junction60W (Tc)150°C (TJ)Through HoleI-PAKTO-251-3 Stub Leads, IPak
Toshiba Semiconductor and Storage MOSFET N-CH 650V 5.8A TO-220SIS ActiveN-ChannelMOSFET (Metal Oxide)650V5.8A (Ta)10V1 Ohm @ 2.9A, 10V3.5V @ 180µA11nC @ 10V±30V390pF @ 300V
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30W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
Toshiba Semiconductor and Storage MOSFET N-CH 650V 7.8A TO-220SIS ActiveN-ChannelMOSFET (Metal Oxide)650V7.8A (Ta)10V650 mOhm @ 3.9A, 10V3.5V @ 300µA16nC @ 10V±30V570pF @ 300V
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30W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
Toshiba Semiconductor and Storage MOSFET N-CH 120V 56A TO-220 ActiveN-ChannelMOSFET (Metal Oxide)120V56A (Tc)10V7.5 mOhm @ 28A, 10V4V @ 1mA69nC @ 10V±20V4200pF @ 60V
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45W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
Toshiba Semiconductor and Storage MOSFET N-CH 650V 9.3A TO-220SIS ActiveN-ChannelMOSFET (Metal Oxide)650V9.3A (Ta)10V500 mOhm @ 4.6A, 10V3.5V @ 350µA20nC @ 10V±30V700pF @ 300V
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30W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
Toshiba Semiconductor and Storage MOSFET N-CH 650V 13.7A TO-220 ActiveN-ChannelMOSFET (Metal Oxide)650V13.7A (Ta)10V250 mOhm @ 6.9A, 10V3.5V @ 690µA35nC @ 10V±30V1300pF @ 300V
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40W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
Toshiba Semiconductor and Storage MOSFET N-CH 650V 13.7A TO-220 ActiveN-ChannelMOSFET (Metal Oxide)650V13.7A (Ta)10V300 mOhm @ 6.9A, 10V4.5V @ 690µA40nC @ 10V±30V1300pF @ 300V
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40W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
Toshiba Semiconductor and Storage MOSFET N-CH 650V 17.3A T0247 ActiveN-ChannelMOSFET (Metal Oxide)650V17.3A (Ta)10V200 mOhm @ 8.7A, 10V3.5V @ 900µA45nC @ 10V±30V1800pF @ 300V
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165W (Tc)150°C (TJ)Through HoleTO-247TO-247-3
Toshiba Semiconductor and Storage MOSFET N-CH 80V 214A TO220SIS ActiveN-ChannelMOSFET (Metal Oxide)80V100A (Tc)10V3.2 mOhm @ 50A, 10V4V @ 1mA130nC @ 10V±20V9000pF @ 40V
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45W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
Toshiba Semiconductor and Storage MOSFET N-CH 600V 25A TO-220AB ActiveN-ChannelMOSFET (Metal Oxide)600V25A (Ta)10V140 mOhm @ 7.5A, 10V4.5V @ 1.2mA60nC @ 10V±30V2400pF @ 300V
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180W (Tc)150°C (TJ)Through HoleTO-220TO-220-3
Toshiba Semiconductor and Storage MOSFET N-CH 650V 35A TO-220 ActiveN-ChannelMOSFET (Metal Oxide)650V35A (Ta)10V80 mOhm @ 17.5A, 10V3.5V @ 2.1mA100nC @ 10V±30V4100pF @ 300V
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50W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
Toshiba Semiconductor and Storage MOSFET N CH 600V 30.8A TO-3PN ActiveN-ChannelMOSFET (Metal Oxide)600V30.8A (Ta)10V88 mOhm @ 15.4A, 10V3.7V @ 1.5mA86nC @ 10V±30V3000pF @ 300VSuper Junction230W (Tc)150°C (TJ)Through HoleTO-3P(N)TO-3P-3, SC-65-3
Toshiba Semiconductor and Storage MOSFET N-CH 600V 38.8A TO-3P ActiveN-ChannelMOSFET (Metal Oxide)600V38.8A (Ta)10V65 mOhm @ 19.4A, 10V3.7V @ 1.9mA110nC @ 10V±30V4100pF @ 300VSuper Junction270W (Tc)150°C (TJ)Through HoleTO-3P(N)TO-3P-3, SC-65-3
Toshiba Semiconductor and Storage PB-F POWER MOSFET TRANSISTOR TO- ActiveN-ChannelMOSFET (Metal Oxide)600V3.7A (Ta)10V1.9 Ohm @ 1.9A, 10V4V @ 400µA14nC @ 10V±30V490pF @ 300V
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30W (Tc)150°CThrough HoleTO-220SISTO-220-3 Full Pack
Toshiba Semiconductor and Storage PB-F POWER MOSFET TRANSISTOR TO- ActiveN-ChannelMOSFET (Metal Oxide)600V6A (Ta)10V1.2 Ohm @ 3A, 10V4V @ 630µA21nC @ 10V±30V740pF @ 300V
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35W (Tc)150°CThrough HoleTO-220SISTO-220-3 Full Pack
Toshiba Semiconductor and Storage MOSFET N-CH 600V 7A TO220SIS ActiveN-ChannelMOSFET (Metal Oxide)600V7A (Tc)10V560 mOhm @ 3.5A, 10V4V @ 240µA14.5nC @ 10V±30V380pF @ 300V
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30W150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
Toshiba Semiconductor and Storage PB-F POWER MOSFET TRANSISTOR TO- ActiveN-ChannelMOSFET (Metal Oxide)600V10A (Ta)10V750 mOhm @ 5A, 10V4V @ 1mA30nC @ 10V±30V1130pF @ 300V
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40W (Tc)150°CThrough HoleTO-220SISTO-220-3 Full Pack
Toshiba Semiconductor and Storage PB-F POWER MOSFET TRANSISTOR TO- ActiveN-ChannelMOSFET (Metal Oxide)600V11A (Ta)10V650 mOhm @ 5.5A, 10V4V @ 1.16mA34nC @ 10V±30V1320pF @ 300V
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45W (Tc)150°CThrough HoleTO-220SISTO-220-3 Full Pack
Toshiba Semiconductor and Storage MOSFET N-CH 650V 7A TO220SIS ActiveN-ChannelMOSFET (Metal Oxide)650V7A (Tc)10V560 mOhm @ 3.5A, 10V4V @ 240µA14.5nC @ 10V±30V380pF @ 300V
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30W150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR ActiveN-ChannelMOSFET (Metal Oxide)60V50A (Tc)4.5V, 10V11.4 mOhm @ 8A, 4.5V2.5V @ 300µA28.4nC @ 10V±20V1990pF @ 25V
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36W (Tc)175°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR ActiveN-ChannelMOSFET (Metal Oxide)40V100A (Tc)4.5V, 10V3.8 mOhm @ 30A, 4.5V2.4V @ 500µA63.4nC @ 10V±20V4670pF @ 20V
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87W (Tc)175°C (TJ)Through HoleTO-220TO-220-3
Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR ActiveN-ChannelMOSFET (Metal Oxide)40V82A (Tc)4.5V, 10V3.8 mOhm @ 30A, 4.5V2.4V @ 500µA63.4nC @ 10V±20V4670pF @ 20V
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36W (Tc)175°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR ActiveN-ChannelMOSFET (Metal Oxide)60V68A (Tc)4.5V, 10V7.2 mOhm @ 15A, 4.5V2.5V @ 500µA48.2nC @ 10V±20V3280pF @ 30V
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36W (Tc)175°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
Toshiba Semiconductor and Storage MOSFET N-CH 75V 80A TO220SIS ActiveN-ChannelMOSFET (Metal Oxide)75V80A (Ta)10V4.5 mOhm @ 40A, 10V4V @ 1mA175nC @ 10V±20V8200pF @ 10V
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45W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
Toshiba Semiconductor and Storage MOSFET N-CH 800V 6.5A TO220 ActiveN-ChannelMOSFET (Metal Oxide)800V6.5A (Ta)10V950 mOhm @ 3.3A, 10V4V @ 280µA13nC @ 10V±20V700pF @ 300V
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110W (Tc)150°CThrough HoleTO-220TO-220-3
Toshiba Semiconductor and Storage MOSFET N-CH 800V 17A TO220SIS ActiveN-ChannelMOSFET (Metal Oxide)800V17A (Ta)10V290 mOhm @ 8.5A, 10V4V @ 850µA32nC @ 10V±20V2050pF @ 300V
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45W (Tc)150°CThrough HoleTO-220SISTO-220-3 Full Pack
Toshiba Semiconductor and Storage MOSFET N-CH 20V 100MA USM ObsoleteN-ChannelMOSFET (Metal Oxide)20V100mA (Ta)2.5V12 Ohm @ 10mA, 2.5V
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10V8.5pF @ 3V
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100mW (Ta)150°C (TJ)Surface MountSC-70SC-70, SOT-323
Toshiba Semiconductor and Storage MOSFET P-CH 20V 2A S-MINI ActiveP-ChannelMOSFET (Metal Oxide)20V2A (Ta)1.5V, 4.5V150 mOhm @ 1A, 4.5V
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4.6nC @ 4.5V±8V270pF @ 10V
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600mW (Ta)150°C (TJ)Surface MountS-MiniTO-236-3, SC-59, SOT-23-3
Toshiba Semiconductor and Storage MOSFET N-CH 60V 2.5A TSM ActiveN-ChannelMOSFET (Metal Oxide)60V2.5A (Ta)4.5V, 10V107 mOhm @ 2A, 10V2.8V @ 1mA7nC @ 10V±20V235pF @ 30V
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1W (Ta)150°C (TJ)Surface MountSOT-23FSOT-23-3 Flat Leads
Toshiba Semiconductor and Storage MOSFET P-CH 30V 2.4A TSM ObsoleteP-ChannelMOSFET (Metal Oxide)30V2.4A (Ta)4V, 10V117 mOhm @ 1A, 10V
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2.5nC @ 15V±20V280pF @ 15V
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700mW (Ta)150°C (TJ)Surface MountTSMTO-236-3, SC-59, SOT-23-3
Toshiba Semiconductor and Storage MOSFET N CH 30V 6A SOT-23F ActiveN-ChannelMOSFET (Metal Oxide)30V6A (Ta)4.5V, 10V38 mOhm @ 4A, 10V2.5V @ 100µA2.7nC @ 4.5V±20V340pF @ 15V
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1W (Ta)150°C (TJ)Surface MountSOT-23FSOT-23-3 Flat Leads
Toshiba Semiconductor and Storage MOSFET P-CH 20V 0.1A ES6 Discontinued at -P-ChannelMOSFET (Metal Oxide)20V100mA (Ta)1.5V, 4V8 Ohm @ 10mA, 4V
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±10V11pF @ 3V
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150mW (Ta)150°C (TJ)Surface MountES6SOT-563, SOT-666
Toshiba Semiconductor and Storage MOSFET P-CH 20V 1.8A UFM ObsoleteP-ChannelMOSFET (Metal Oxide)20V1.8A (Ta)1.5V, 4V149 mOhm @ 600mA, 4V1V @ 1mA7.7nC @ 4V±8V331pF @ 10V
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500mW (Ta)150°C (TJ)Surface MountUFM3-SMD, Flat Leads
Toshiba Semiconductor and Storage MOSFET N-CH 20V 10A ActiveN-ChannelMOSFET (Metal Oxide)20V10A (Ta)2.5V, 4.5V12 mOhm @ 7A, 4.5V1.2V @ 1mA9.4nC @ 4.5V±12V710pF @ 10V
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1W (Ta)150°C (TJ)Surface MountUF66-SMD, Flat Leads
Toshiba Semiconductor and Storage MOSFET N CH 30V 20A 8SOP ActiveN-ChannelMOSFET (Metal Oxide)30V20A (Tc)10V8.9 mOhm @ 10A, 10V2.3V @ 1mA9.8nC @ 10V±20V820pF @ 15V
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1.6W (Ta), 24W (Tc)150°C (TJ)Surface Mount8-SOP Advance (5x5)8-PowerVDFN
Toshiba Semiconductor and Storage MOSFET P-CH 60V 0.2A S-MINI ActiveP-ChannelMOSFET (Metal Oxide)60V200mA (Ta)10V2 Ohm @ 50mA, 10V
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±20V85pF @ 10V
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200mW (Ta)150°C (TJ)Surface MountSC-59TO-236-3, SC-59, SOT-23-3
Toshiba Semiconductor and Storage MOSFET N CH 60V 28A 8-SOP ADV ActiveN-ChannelMOSFET (Metal Oxide)60V28A (Ta)10V5.9 mOhm @ 14A, 10V4V @ 300µA38nC @ 10V±20V3100pF @ 30V
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1.6W (Ta), 57W (Tc)150°C (TJ)Surface Mount8-SOP Advance (5x5)8-PowerVDFN
Toshiba Semiconductor and Storage MOSFET N-CH 250V 15A 8-SOP ActiveN-ChannelMOSFET (Metal Oxide)250V10A (Ta)10V112 mOhm @ 5A, 10V4V @ 300µA11nC @ 10V±20V1100pF @ 100V
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1.6W (Ta), 57W (Tc)150°C (TJ)Surface Mount8-SOP Advance (5x5)8-PowerVDFN
Toshiba Semiconductor and Storage MOSFET N-CH 60V 90A DPAK ActiveN-ChannelMOSFET (Metal Oxide)60V90A (Ta)4.5V, 10V3.3 mOhm @ 45A, 10V2.5V @ 500µA81nC @ 10V±20V5400pF @ 10V
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157W (Tc)175°C (TJ)Surface MountTO-252-3TO-252-3, DPak (2 Leads + Tab), SC-63
Toshiba Semiconductor and Storage MOSFET N-CH 100V 65A D2PAK ActiveN-ChannelMOSFET (Metal Oxide)100V65A (Ta)10V4.5 mOhm @ 32.5A, 10V4V @ 1mA81nC @ 10V±20V5400pF @ 50V
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156W (Tc)150°C (TJ)Surface MountD2PAKTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Toshiba Semiconductor and Storage MOSFET N CH 100V 60A SOP ADV ActiveN-ChannelMOSFET (Metal Oxide)100V60A (Tc)10V4.5 mOhm @ 30A, 10V4V @ 1mA58nC @ 10V±20V5200pF @ 50V
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1.6W (Ta), 78W (Tc)150°C (TJ)Surface Mount8-SOP Advance (5x5)8-PowerVDFN
Toshiba Semiconductor and Storage MOSFET N-CH 650V 13.7A I2PAK ActiveN-ChannelMOSFET (Metal Oxide)650V13.7A (Ta)10V250 mOhm @ 6.9A, 10V3.5V @ 690µA35nC @ 10V±30V1300pF @ 300V
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130W (Tc)150°C (TJ)Through HoleI2PAKTO-262-3 Long Leads, I²Pak, TO-262AA
Toshiba Semiconductor and Storage MOSFET N CH 600V 15.8A TO-220 ActiveN-ChannelMOSFET (Metal Oxide)600V15.8A (Ta)10V190 mOhm @ 7.9A, 10V3.7V @ 790µA38nC @ 10V±30V1350pF @ 300VSuper Junction130W (Tc)150°C (TJ)Through HoleTO-220TO-220-3
Toshiba Semiconductor and Storage MOSFET N CH 600V 15.8A TO-3PN ActiveN-ChannelMOSFET (Metal Oxide)600V15.8A (Ta)10V190 mOhm @ 7.9A, 10V3.7V @ 790µA38nC @ 10V±30V1350pF @ 300VSuper Junction130W (Tc)150°C (TJ)Through HoleTO-3P(N)TO-3P-3, SC-65-3
Toshiba Semiconductor and Storage MOSFET N CH 600V 15.8A TO247 ActiveN-ChannelMOSFET (Metal Oxide)600V15.8A (Ta)10V190 mOhm @ 7.9A, 10V3.7V @ 790µA38nC @ 10V±30V1350pF @ 300VSuper Junction130W (Tc)150°C (TJ)Through HoleTO-247TO-247-3
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