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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 61.8A TO-247 |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 61.8A (Ta) | 10V | 40 mOhm @ 30.9A, 10V | 3.7V @ 3.1mA | 180nC @ 10V | ±30V | 6500pF @ 300V | Super Junction | 400W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 5.2A IPAK |
Active | N-Channel | MOSFET (Metal Oxide) | 650V | 5.2A (Ta) | 10V | 1.22 Ohm @ 2.6A, 10V | 3.5V @ 170µA | 10.5nC @ 10V | ±30V | 380pF @ 300V | - | 60W (Tc) | 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 5.8A IPAK-OS |
Active | N-Channel | MOSFET (Metal Oxide) | 650V | 5.8A (Ta) | 10V | 1.05 Ohm @ 2.9A, 10V | 3.5V @ 180µA | 11nC @ 10V | ±30V | 390pF @ 300V | - | 60W (Tc) | 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 7.8A IPAK |
Active | N-Channel | MOSFET (Metal Oxide) | 650V | 7.8A (Ta) | 10V | 670 mOhm @ 3.9A, 10V | 3.5V @ 300µA | 16nC @ 10V | ±30V | 570pF @ 300V | - | 80W (Tc) | 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 6.8A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 650V | 6.8A (Ta) | 10V | 780 mOhm @ 3.4A, 10V | 3.5V @ 250µA | 15nC @ 10V | ±30V | 490pF @ 300V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 5.4A IPAK |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 5.4A (Ta) | 10V | 900 mOhm @ 2.7A, 10V | 3.7V @ 270µA | 10.5nC @ 10V | ±30V | 380pF @ 300V | Super Junction | 60W (Tc) | 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 5.8A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 650V | 5.8A (Ta) | 10V | 1 Ohm @ 2.9A, 10V | 3.5V @ 180µA | 11nC @ 10V | ±30V | 390pF @ 300V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 7.8A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 650V | 7.8A (Ta) | 10V | 650 mOhm @ 3.9A, 10V | 3.5V @ 300µA | 16nC @ 10V | ±30V | 570pF @ 300V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 120V 56A TO-220 |
Active | N-Channel | MOSFET (Metal Oxide) | 120V | 56A (Tc) | 10V | 7.5 mOhm @ 28A, 10V | 4V @ 1mA | 69nC @ 10V | ±20V | 4200pF @ 60V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 9.3A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 650V | 9.3A (Ta) | 10V | 500 mOhm @ 4.6A, 10V | 3.5V @ 350µA | 20nC @ 10V | ±30V | 700pF @ 300V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13.7A TO-220 |
Active | N-Channel | MOSFET (Metal Oxide) | 650V | 13.7A (Ta) | 10V | 250 mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35nC @ 10V | ±30V | 1300pF @ 300V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13.7A TO-220 |
Active | N-Channel | MOSFET (Metal Oxide) | 650V | 13.7A (Ta) | 10V | 300 mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40nC @ 10V | ±30V | 1300pF @ 300V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 17.3A T0247 |
Active | N-Channel | MOSFET (Metal Oxide) | 650V | 17.3A (Ta) | 10V | 200 mOhm @ 8.7A, 10V | 3.5V @ 900µA | 45nC @ 10V | ±30V | 1800pF @ 300V | - | 165W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 214A TO220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Tc) | 10V | 3.2 mOhm @ 50A, 10V | 4V @ 1mA | 130nC @ 10V | ±20V | 9000pF @ 40V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 25A TO-220AB |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Ta) | 10V | 140 mOhm @ 7.5A, 10V | 4.5V @ 1.2mA | 60nC @ 10V | ±30V | 2400pF @ 300V | - | 180W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 35A TO-220 |
Active | N-Channel | MOSFET (Metal Oxide) | 650V | 35A (Ta) | 10V | 80 mOhm @ 17.5A, 10V | 3.5V @ 2.1mA | 100nC @ 10V | ±30V | 4100pF @ 300V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 30.8A TO-3PN |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 88 mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86nC @ 10V | ±30V | 3000pF @ 300V | Super Junction | 230W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 38.8A TO-3P |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 38.8A (Ta) | 10V | 65 mOhm @ 19.4A, 10V | 3.7V @ 1.9mA | 110nC @ 10V | ±30V | 4100pF @ 300V | Super Junction | 270W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TO- |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 3.7A (Ta) | 10V | 1.9 Ohm @ 1.9A, 10V | 4V @ 400µA | 14nC @ 10V | ±30V | 490pF @ 300V | - | 30W (Tc) | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TO- |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 6A (Ta) | 10V | 1.2 Ohm @ 3A, 10V | 4V @ 630µA | 21nC @ 10V | ±30V | 740pF @ 300V | - | 35W (Tc) | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 7A TO220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 560 mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5nC @ 10V | ±30V | 380pF @ 300V | - | 30W | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TO- |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Ta) | 10V | 750 mOhm @ 5A, 10V | 4V @ 1mA | 30nC @ 10V | ±30V | 1130pF @ 300V | - | 40W (Tc) | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TO- |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Ta) | 10V | 650 mOhm @ 5.5A, 10V | 4V @ 1.16mA | 34nC @ 10V | ±30V | 1320pF @ 300V | - | 45W (Tc) | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 7A TO220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 560 mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5nC @ 10V | ±30V | 380pF @ 300V | - | 30W | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
Active | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 11.4 mOhm @ 8A, 4.5V | 2.5V @ 300µA | 28.4nC @ 10V | ±20V | 1990pF @ 25V | - | 36W (Tc) | 175°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
Active | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 3.8 mOhm @ 30A, 4.5V | 2.4V @ 500µA | 63.4nC @ 10V | ±20V | 4670pF @ 20V | - | 87W (Tc) | 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
Active | N-Channel | MOSFET (Metal Oxide) | 40V | 82A (Tc) | 4.5V, 10V | 3.8 mOhm @ 30A, 4.5V | 2.4V @ 500µA | 63.4nC @ 10V | ±20V | 4670pF @ 20V | - | 36W (Tc) | 175°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
Active | N-Channel | MOSFET (Metal Oxide) | 60V | 68A (Tc) | 4.5V, 10V | 7.2 mOhm @ 15A, 4.5V | 2.5V @ 500µA | 48.2nC @ 10V | ±20V | 3280pF @ 30V | - | 36W (Tc) | 175°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 75V 80A TO220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 75V | 80A (Ta) | 10V | 4.5 mOhm @ 40A, 10V | 4V @ 1mA | 175nC @ 10V | ±20V | 8200pF @ 10V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 800V 6.5A TO220 |
Active | N-Channel | MOSFET (Metal Oxide) | 800V | 6.5A (Ta) | 10V | 950 mOhm @ 3.3A, 10V | 4V @ 280µA | 13nC @ 10V | ±20V | 700pF @ 300V | - | 110W (Tc) | 150°C | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 800V 17A TO220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 800V | 17A (Ta) | 10V | 290 mOhm @ 8.5A, 10V | 4V @ 850µA | 32nC @ 10V | ±20V | 2050pF @ 300V | - | 45W (Tc) | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 100MA USM |
Obsolete | N-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 2.5V | 12 Ohm @ 10mA, 2.5V | - | - | 10V | 8.5pF @ 3V | - | 100mW (Ta) | 150°C (TJ) | Surface Mount | SC-70 | SC-70, SOT-323 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 2A S-MINI |
Active | P-Channel | MOSFET (Metal Oxide) | 20V | 2A (Ta) | 1.5V, 4.5V | 150 mOhm @ 1A, 4.5V | - | 4.6nC @ 4.5V | ±8V | 270pF @ 10V | - | 600mW (Ta) | 150°C (TJ) | Surface Mount | S-Mini | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 2.5A TSM |
Active | N-Channel | MOSFET (Metal Oxide) | 60V | 2.5A (Ta) | 4.5V, 10V | 107 mOhm @ 2A, 10V | 2.8V @ 1mA | 7nC @ 10V | ±20V | 235pF @ 30V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 2.4A TSM |
Obsolete | P-Channel | MOSFET (Metal Oxide) | 30V | 2.4A (Ta) | 4V, 10V | 117 mOhm @ 1A, 10V | - | 2.5nC @ 15V | ±20V | 280pF @ 15V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 30V 6A SOT-23F |
Active | N-Channel | MOSFET (Metal Oxide) | 30V | 6A (Ta) | 4.5V, 10V | 38 mOhm @ 4A, 10V | 2.5V @ 100µA | 2.7nC @ 4.5V | ±20V | 340pF @ 15V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 0.1A ES6 |
Discontinued at - | P-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.5V, 4V | 8 Ohm @ 10mA, 4V | - | - | ±10V | 11pF @ 3V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | ES6 | SOT-563, SOT-666 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 1.8A UFM |
Obsolete | P-Channel | MOSFET (Metal Oxide) | 20V | 1.8A (Ta) | 1.5V, 4V | 149 mOhm @ 600mA, 4V | 1V @ 1mA | 7.7nC @ 4V | ±8V | 331pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 10A |
Active | N-Channel | MOSFET (Metal Oxide) | 20V | 10A (Ta) | 2.5V, 4.5V | 12 mOhm @ 7A, 4.5V | 1.2V @ 1mA | 9.4nC @ 4.5V | ±12V | 710pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | UF6 | 6-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N CH 30V 20A 8SOP |
Active | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Tc) | 10V | 8.9 mOhm @ 10A, 10V | 2.3V @ 1mA | 9.8nC @ 10V | ±20V | 820pF @ 15V | - | 1.6W (Ta), 24W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 0.2A S-MINI |
Active | P-Channel | MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 10V | 2 Ohm @ 50mA, 10V | - | - | ±20V | 85pF @ 10V | - | 200mW (Ta) | 150°C (TJ) | Surface Mount | SC-59 | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 60V 28A 8-SOP ADV |
Active | N-Channel | MOSFET (Metal Oxide) | 60V | 28A (Ta) | 10V | 5.9 mOhm @ 14A, 10V | 4V @ 300µA | 38nC @ 10V | ±20V | 3100pF @ 30V | - | 1.6W (Ta), 57W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 15A 8-SOP |
Active | N-Channel | MOSFET (Metal Oxide) | 250V | 10A (Ta) | 10V | 112 mOhm @ 5A, 10V | 4V @ 300µA | 11nC @ 10V | ±20V | 1100pF @ 100V | - | 1.6W (Ta), 57W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 90A DPAK |
Active | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Ta) | 4.5V, 10V | 3.3 mOhm @ 45A, 10V | 2.5V @ 500µA | 81nC @ 10V | ±20V | 5400pF @ 10V | - | 157W (Tc) | 175°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 65A D2PAK |
Active | N-Channel | MOSFET (Metal Oxide) | 100V | 65A (Ta) | 10V | 4.5 mOhm @ 32.5A, 10V | 4V @ 1mA | 81nC @ 10V | ±20V | 5400pF @ 50V | - | 156W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N CH 100V 60A SOP ADV |
Active | N-Channel | MOSFET (Metal Oxide) | 100V | 60A (Tc) | 10V | 4.5 mOhm @ 30A, 10V | 4V @ 1mA | 58nC @ 10V | ±20V | 5200pF @ 50V | - | 1.6W (Ta), 78W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13.7A I2PAK |
Active | N-Channel | MOSFET (Metal Oxide) | 650V | 13.7A (Ta) | 10V | 250 mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35nC @ 10V | ±30V | 1300pF @ 300V | - | 130W (Tc) | 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 15.8A TO-220 |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 15.8A (Ta) | 10V | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | ±30V | 1350pF @ 300V | Super Junction | 130W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 15.8A TO-3PN |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 15.8A (Ta) | 10V | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | ±30V | 1350pF @ 300V | Super Junction | 130W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 15.8A TO247 |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 15.8A (Ta) | 10V | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | ±30V | 1350pF @ 300V | Super Junction | 130W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |