WeEn Semiconductors Co., Ltd Distributor - Diodes - Rectifiers - Single - BYV30W-600PQ BYV30X-600PQ - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
BYV30W-600PQ	WeEn Semiconductors	DIODE GEN PURP 600V 30A TO247-2	Active	Standard	600V	30A	1.55V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	-	Through Hole	TO-247-2	TO-247-2	175°C (Max)
BYV30X-600PQ	WeEn Semiconductors	DIODE GEN PURP 600V 30A TO220F	Active	Standard	600V	30A	1.55V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220F	175°C (Max)
NXPSC04650BJ	WeEn Semiconductors	DIODE SCHOTTKY 650V 4A D2PAK	Active	Silicon Carbide Schottky	650V	4A	1.7V @ 4A	No Recovery Time > 500mA (Io)	0ns	170µA @ 650V	130pF @ 1V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	175°C (Max)
NXPSC04650DJ	WeEn Semiconductors	DIODE SCHOTTKY 650V 4A DPAK	Active	Silicon Carbide Schottky	650V	4A	1.7V @ 4A	No Recovery Time > 500mA (Io)	0ns	170µA @ 650V	130pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	175°C (Max)
NXPSC04650XQ	WeEn Semiconductors	DIODE SCHOTTKY 650V 4A TO220F	Active	Silicon Carbide Schottky	650V	4A	1.7V @ 4A	No Recovery Time > 500mA (Io)	0ns	170µA @ 650V	130pF @ 1V, 1MHz	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220F	175°C (Max)
NXPSC06650BJ	WeEn Semiconductors	DIODE SCHOTTKY 650V 6A D2PAK	Active	Silicon Carbide Schottky	650V	6A	1.7V @ 6A	No Recovery Time > 500mA (Io)	0ns	200µA @ 650V	190pF @ 1V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	175°C (Max)
NXPSC06650DJ	WeEn Semiconductors	DIODE SCHOTTKY 650V 6A DPAK	Active	Silicon Carbide Schottky	650V	6A	1.7V @ 6A	No Recovery Time > 500mA (Io)	0ns	200µA @ 650V	190pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	175°C (Max)
NXPSC06650XQ	WeEn Semiconductors	DIODE SCHOTTKY 650V 6A TO220F	Active	Silicon Carbide Schottky	650V	6A	1.7V @ 6A	No Recovery Time > 500mA (Io)	0ns	200µA @ 650V	190pF @ 1V, 1MHz	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220F	175°C (Max)
NXPSC08650BJ	WeEn Semiconductors	DIODE SCHOTTKY 650V 8A D2PAK	Active	Silicon Carbide Schottky	650V	8A	1.7V @ 8A	No Recovery Time > 500mA (Io)	0ns	230µA @ 650V	260pF @ 1V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	175°C (Max)
NXPSC08650DJ	WeEn Semiconductors	DIODE SCHOTTKY 650V 8A DPAK	Active	Silicon Carbide Schottky	650V	8A	1.7V @ 8A	No Recovery Time > 500mA (Io)	0ns	230µA @ 650V	260pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	175°C (Max)
NXPSC08650XQ	WeEn Semiconductors	DIODE SCHOTTKY 650V 8A TO220F	Active	Silicon Carbide Schottky	650V	8A	1.7V @ 8A	No Recovery Time > 500mA (Io)	0ns	230µA @ 650V	260pF @ 1V, 1MHz	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220F	175°C (Max)
NXPSC10650BJ	WeEn Semiconductors	DIODE SCHOTTKY 650V 10A D2PAK	Active	Silicon Carbide Schottky	650V	10A	1.7V @ 10A	No Recovery Time > 500mA (Io)	0ns	250µA @ 650V	300pF @ 1V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	175°C (Max)
NXPSC10650DJ	WeEn Semiconductors	DIODE SCHOTTKY 650V 10A DPAK	Active	Silicon Carbide Schottky	650V	10A	1.7V @ 10A	No Recovery Time > 500mA (Io)	0ns	250µA @ 650V	300pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	175°C (Max)
NXPSC10650XQ	WeEn Semiconductors	DIODE SCHOTTKY 650V 10A TO220F	Active	Silicon Carbide Schottky	650V	10A	1.7V @ 10A	No Recovery Time > 500mA (Io)	0ns	250µA @ 650V	300pF @ 1V, 1MHz	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220F	175°C (Max)
BYV29-600PQ	WeEn Semiconductors	DIODE GEN PURP 600V 9A TO220AB	Active	Standard	600V	9A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	-	Through Hole	TO-220-3	TO-220AB	175°C (Max)
BYV29B-600PJ	WeEn Semiconductors	DIODE GEN PURP 600V 9A D2PAK	Active	Standard	600V	9A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	175°C (Max)
BYV29D-600PJ	WeEn Semiconductors	DIODE GEN PURP 600V 9A DPAK	Active	Standard	600V	9A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	175°C (Max)
BYV29G-600PQ	WeEn Semiconductors	DIODE GEN PURP 600V 9A I2PAK	Active	Standard	600V	9A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	-	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	I2PAK (TO-262)	175°C (Max)
BYV29X-600PQ	WeEn Semiconductors	DIODE GEN PURP 600V 9A TO220F	Active	Standard	600V	9A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	-	Through Hole	TO-220-2 Full Pack	TO-220F	175°C (Max)
BYC30-1200PQ	WeEn Semiconductors	DIODE GEN PURP 1.2KV 30A TO220AC	Active	Standard	1200V	30A	3.3V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	65ns	250µA @ 1200V	-	Through Hole	TO-220-2	TO-220AC	175°C (Max)
BYC5-1200PQ	WeEn Semiconductors	DIODE GEN PURP 1.2KV 5A TO220AC	Active	Standard	1200V	5A	3.2V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	36ns	100µA @ 1200V	-	Through Hole	TO-220-2	TO-220AC	175°C (Max)
BYT79B-600PJ	WeEn Semiconductors	DIODE GEN PURP 600V 15A D2PAK	Active	Standard	600V	15A	1.38V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	10µA @ 600V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	175°C (Max)
BYC30W-1200PQ	WeEn Semiconductors	DIODE GEN PURP 1.2KV 30A TO247-2	Active	Standard	1200V	30A	3.3V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	65ns	250µA @ 1200V	-	Through Hole	TO-247-2	TO-247-2	175°C (Max)
MUR560J	WeEn Semiconductors	DIODE GEN PURP 600V 5A SMC	Active	Standard	600V	5A	1.35V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	64ns	3µA @ 600V	-	Surface Mount	DO-214AB, SMC	SMC	175°C (Max)
SK8DJ	WeEn Semiconductors	DIODE GEN PURP 800V 8A DPAK	Active	Standard	800V	8A	1.1V @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	50µA @ 800V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	150°C (Max)
BYC30DW-600PQ	WeEn Semiconductors	BYC30DW-600PQ/TO247/STANDARD MAR	Active	Standard	600V	30A	3.3V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	33ns	10µA @ 600V	-	Through Hole	TO-247-2	TO-247-2	175°C (Max)
BYC30W-600PT2Q	WeEn Semiconductors	BYC30W-600PT2Q/TO247/STANDARD MA	Active	Standard	600V	30A	2.75V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	34ns	10µA @ 600V	-	Through Hole	TO-247-2	TO-247-2	175°C (Max)
BYC8-1200PQ	WeEn Semiconductors	BYC8-1200PQ/TO-220AC/STANDARD MA	Active	Standard	1200V	8A	3.2V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	100µA @ 1200V	-	Through Hole	TO-220-2	TO-220AC	175°C (Max)
BYV40W-600PQ	WeEn Semiconductors	BYV40W-600PQ/TO247/STANDARD MARK	Active	Standard	600V	40A	1.6V @ 40A	Fast Recovery =< 500ns, > 200mA (Io)	79ns	10µA @ 600V	-	Through Hole	TO-247-2	TO-247-2	175°C (Max)
BYC15-1200PQ	WeEn Semiconductors	BYC15-1200PQ/TO-220AC/STANDARD M	Active	Standard	1200V	15A	3.2V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	61ns	100µA @ 1200V	-	Through Hole	TO-220-2	TO-220AC	175°C (Max)
BYR5D-1200PJ	WeEn Semiconductors	BYR5D-1200PDPAK Q1 T1 STANDARD M	Active	Standard	1200V	5A	2.2V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	62ns	50µA @ 1200V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	175°C (Max)
BYC75W-1200PQ	WeEn Semiconductors	STANDARD MARKING HORIZONTAL R	Active	Standard	1200V	75A	-	Fast Recovery =< 500ns, > 200mA (Io)	85ns	250µA @ 1200V	-	Through Hole	TO-247-2	TO-247-2	175°C (Max)
OB2003/001V	WeEn Semiconductors	OB2003/001V/NAU000/NO MARKCHIPS	Active	-	-	-	-	-	-	-	-	-	-	-	-

Manufacturers for Diodes - Rectifiers - Single