Manufacturer Part NumberHN3C10FUTE85LF
Manufacturer / BrandToshiba Semiconductor and Storage
Available Quantity32710 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionTRANSISTOR NPN US6
Product CategoryTransistors - Bipolar (BJT) - RF
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download HN3C10FUTE85LF.pdf

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Part Number
HN3C10FUTE85LF
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Active
Transistor Type
2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max)
12V
Frequency - Transition
7GHz
Noise Figure (dB Typ @ f)
1.1dB @ 1GHz
Gain
11.5dB
Power - Max
200mW
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 20mA, 10V
Current - Collector (Ic) (Max)
80mA
Operating Temperature
-
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
US6
Weight
Contact us
Application
Email for details
Replacement Part
HN3C10FUTE85LF

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Part Number Manufacturer Description
HN3C10FUTE85LF Toshiba Semiconductor and Storage TRANSISTOR NPN US6