Manufacturer Part NumberTH58BYG2S3HBAI6
Manufacturer / BrandToshiba Memory America, Inc.
Available Quantity18790 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionIC FLASH 4G PARALLEL 67VFBGA
Product CategoryMemory
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download TH58BYG2S3HBAI6.pdf

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Part Number
TH58BYG2S3HBAI6
Production Status (Lifecycle)
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Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Active
Memory Type
Non-Volatile
Memory Format
FLASH
Technology
FLASH - NAND (SLC)
Memory Size
4Gb (512M x 8)
Clock Frequency
-
Write Cycle Time - Word, Page
25ns
Access Time
25ns
Memory Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C (TA)
Mounting Type
Surface Mount
Package / Case
67-VFBGA
Supplier Device Package
67-VFBGA (6.5x8)
Weight
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Application
Email for details
Replacement Part
TH58BYG2S3HBAI6

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