Manufacturer Part NumberSCT2H12NYTB
Manufacturer / BrandRohm Semiconductor
Available Quantity173560 Pieces
Unit PriceQuote by Email ([email protected])
Brife Description1700V 1.2 OHM 4A SIC FET
Product CategoryTransistors - FETs, MOSFETs - Single
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download SCT2H12NYTB.pdf

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Part Number
SCT2H12NYTB
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1700V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
1.5 Ohm @ 1.1A, 18V
Vgs(th) (Max) @ Id
4V @ 410µA
Gate Charge (Qg) (Max) @ Vgs
14nC @ 18V
Vgs (Max)
+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds
184pF @ 800V
FET Feature
-
Power Dissipation (Max)
44W (Tc)
Operating Temperature
175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-268
Package / Case
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Weight
Contact us
Application
Email for details
Replacement Part
SCT2H12NYTB

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