Diodes - Rectifiers - Single - Discrete Semiconductor Products - 1N6642US DH60-18A VS-70HF160 GAP3SLT33-214 - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1N6642US	Microsemi Corporation	DIODE GEN PURP 75V 300MA D5D	Active	Standard	75V	300mA	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	5ns	500nA @ 75V	5pF @ 0V, 1MHz	Surface Mount	SQ-MELF, D	D-5D	-65°C ~ 175°C
DH60-18A	IXYS	DIODE GEN PURP 1.8KV 60A TO247AD	Active	Standard	1800V	60A	2.04V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	230ns	200µA @ 1800V	32pF @ 1200V, 1MHz	Through Hole	TO-247-2	TO-247AD	-55°C ~ 150°C
VS-70HF160	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.6KV 70A DO203AB	Active	Standard	1600V	70A	1.46V @ 220A	Standard Recovery >500ns, > 200mA (Io)	-	4.5mA @ 1600V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 150°C
GAP3SLT33-214	GeneSiC Semiconductor	DIODE SCHOTTKY 3.3KV 300MA DO214	Active	Silicon Carbide Schottky	3300V	300mA (DC)	2.2V @ 300mA	No Recovery Time > 500mA (Io)	0ns	10µA @ 3300V	42pF @ 1V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA	-55°C ~ 175°C
IDH20G120C5XKSA1	Infineon Technologies	DIODE SCHOTTKY 1.2KV 56A TO220-2	Active	Silicon Carbide Schottky	1200V	56A (DC)	1.8V @ 20A	No Recovery Time > 500mA (Io)	0ns	123µA @ 1200V	1050pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-1	-55°C ~ 175°C
GAP3SLT33-220FP	GeneSiC Semiconductor	DIODE SCHOTTKY 3.3KV 300MA TO220	Active	Silicon Carbide Schottky	3300V	300mA	1.7V @ 300mA	No Recovery Time > 500mA (Io)	0ns	5µA @ 3300V	42pF @ 1V, 1MHz	Through Hole	TO-220-2 Full Pack	TO-220FP	-55°C ~ 175°C
VS-80APF12-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 80A TO247AC	Active	Standard	1200V	80A	1.35V @ 80A	Fast Recovery =< 500ns, > 200mA (Io)	480ns	100µA @ 1200V	-	Through Hole	TO-247-3	TO-247AC	-40°C ~ 150°C
SCS120AGC	Rohm Semiconductor	DIODE SCHOTTKY 600V 20A TO220AC	Not For New Designs	Silicon Carbide Schottky	600V	20A	1.7V @ 20A	No Recovery Time > 500mA (Io)	0ns	400µA @ 600V	860pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	175°C (Max)
C4D20120A	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 20A TO220-2	Active	Silicon Carbide Schottky	1200V	54.5A (DC)	1.8V @ 20A	No Recovery Time > 500mA (Io)	0ns	200µA @ 1200V	1500pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
VS-T40HF60	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 40A D-55	Active	Standard	600V	40A	-	Standard Recovery >500ns, > 200mA (Io)	-	15mA @ 600V	-	Chassis Mount	D-55 T-Module	D-55	-
VS-HFA135NH40PBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 275A HALFPAK	Active	Standard	400V	275A	2V @ 270A	Fast Recovery =< 500ns, > 200mA (Io)	120ns	3mA @ 400V	-	Chassis Mount	D-67 HALF-PAK	HALF-PAK	-
VS-243NQ100PBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 240A D-67	Active	Schottky	100V	240A	950mV @ 240A	Fast Recovery =< 500ns, > 200mA (Io)	-	6mA @ 100V	5500pF @ 5V, 1MHz	Chassis Mount	D-67 HALF-PAK	D-67	-55°C ~ 175°C
VS-300UR60A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 300A DO9	Active	Standard, Reverse Polarity	600V	300A	1.4V @ 942A	Standard Recovery >500ns, > 200mA (Io)	-	40mA @ 600V	-	Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-65°C ~ 200°C
VS-300U60A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 300A DO205AB	Active	Standard	600V	300A	1.4V @ 942A	Standard Recovery >500ns, > 200mA (Io)	-	40mA @ 600V	-	Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-65°C ~ 200°C
C3D25170H	Cree/Wolfspeed	DIODE SCHOTTKY 1.7KV 26.3A TO247	Active	Silicon Carbide Schottky	1700V	26.3A (DC)	2.5V @ 25A	No Recovery Time > 500mA (Io)	0ns	100µA @ 1700V	2079pF @ 0V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
MEO550-02DA	IXYS	DIODE GEN PURP 200V 582A Y4-M6	Active	Standard	200V	582A	1.25V @ 520A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5mA @ 200V	-	Chassis Mount	Y4-M6	Y4-M6	-40°C ~ 150°C
1N5822US	Microsemi Corporation	DIODE SCHOTTKY 40V 3A B-MELF	Active	Schottky	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100mA @ 40V	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 125°C
MDO500-12N1	IXYS	DIODE GEN PURP 1.2KV 560A Y1-CU	Active	Standard	1200V	560A	1.3V @ 1200A	Standard Recovery >500ns, > 200mA (Io)	-	30mA @ 1200V	762pF @ 400V, 1MHz	Chassis Mount	Y1-CU	Y1-CU	-
LS410860	Powerex Inc.	DIODE GP 800V 600A POWRBLOK	Active	Standard	800V	600A	1.19V @ 1800A	Standard Recovery >500ns, > 200mA (Io)	-	40mA @ 800V	-	Chassis Mount	POW-R-BLOK™ Module	POW-R-BLOK™ Module	-
LS411860	Powerex Inc.	DIODE GP 1.8KV 600A POWRBLOK	Active	Standard	1800V	600A	1.19V @ 1800A	Standard Recovery >500ns, > 200mA (Io)	-	40mA @ 1800V	-	Chassis Mount	POW-R-BLOK™ Module	POW-R-BLOK™ Module	-
1SS133M R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 90V 150MA DO34	Active	Standard	90V	150mA	1.2V @ 150mA	Small Signal =< 200mA (Io), Any Speed	4ns	500nA @ 80V	4pF @ 0V, 1MHz	Through Hole	DO-204AG, DO-34, Axial	DO-34	175°C (Max)
1N4148 A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 150MA DO35	Active	Standard	100V	150mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 150°C
1N4148-T50R	ON Semiconductor	DIODE GEN PURP 100V 200MA DO35	Active	Standard	100V	200mA	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
1N914ATR	ON Semiconductor	DIODE GEN PURP 100V 200MA DO35	Active	Standard	100V	200mA	1V @ 20mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
1N4148TA	ON Semiconductor	DIODE GEN PURP 100V 200MA DO35	Active	Standard	100V	200mA	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
1N914TR	ON Semiconductor	DIODE GEN PURP 100V 200MA DO35	Active	Standard	100V	200mA	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
1N914BTR	ON Semiconductor	DIODE GEN PURP 100V 200MA DO35	Active	Standard	100V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
1N4148-TP	Micro Commercial Co	DIODE GEN PURP 75V 150MA DO35	Active	Standard	75V	150mA	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
BAS16GWJ	Nexperia USA Inc.	DIODE GEN PURP 100V 215MA SOD123	Active	Standard	100V	215mA (DC)	1.25V @ 150mA	Small Signal =< 200mA (Io), Any Speed	4ns	500nA @ 80V	1.5pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	150°C (Max)
LL4448 L1G	Taiwan Semiconductor Corporation	DIODE GP 75V 150MA MINIMELF	Active	Standard	75V	150mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	54ns	5µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	Mini MELF	-65°C ~ 175°C
1N4148-TAP	Vishay Semiconductor Diodes Division	DIODE GEN PURP 75V 300MA DO35	Active	Standard	75V	300mA (DC)	1V @ 10mA	Fast Recovery =< 500ns, > 200mA (Io)	8ns	25nA @ 20V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 150°C
1N4454TR	ON Semiconductor	DIODE GEN PURP 50V 200MA DO35	Active	Standard	50V	200mA	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 50V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
BAS21LT3G	ON Semiconductor	DIODE GEN PURP 250V 200MA SOT23	Active	Standard	250V	200mA (DC)	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 200V	5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)	-55°C ~ 150°C
FDLL4148-D87Z	ON Semiconductor	DIODE GEN PURP 100V 200MA SOD80	Active	Standard	100V	200mA	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	SOD-80	-65°C ~ 175°C
LS4148 L1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 450MA SOD80	Active	Standard	100V	450mA	1V @ 10mA	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	SOD-80 Variant	SOD-80 QuadroMELF	-65°C ~ 175°C
1N4148WL2-TP	Micro Commercial Co	DIODE GP 100V 150MA DFN1006-2	Active	Standard	100V	150mA	1.25V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	1.5pF @ 0V, 1MHz	Surface Mount	0402 (1006 Metric)	DFN1006-2	-65°C ~ 150°C
1N4007-G	Comchip Technology	DIODE GEN PURP 1KV 1A DO41	Active	Standard	1000V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
1N4001-G	Comchip Technology	DIODE GEN PURP 50V 1A DO41	Active	Standard	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
1N4001-TP	Micro Commercial Co	DIODE GEN PURP 50V 1A DO41	Active	Standard	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 50V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
1N4005-TP	Micro Commercial Co	DIODE GEN PURP 600V 1A DO41	Active	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
1N4002-TP	Micro Commercial Co	DIODE GEN PURP 100V 1A DO41	Active	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 100V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
LS4148-GS18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 75V 150MA SOD80	Active	Standard	75V	150mA	1V @ 50mA	Small Signal =< 200mA (Io), Any Speed	8ns	5µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	SOD-80 MiniMELF	175°C (Max)
BAS20LT1G	ON Semiconductor	DIODE GEN PURP 200V 200MA SOT23	Active	Standard	200V	200mA (DC)	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 150V	5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)	-55°C ~ 150°C
1N4448TR	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 150MA DO35	Active	Standard	100V	150mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	8ns	5µA @ 75V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
1N4151TR	Vishay Semiconductor Diodes Division	DIODE GEN PURP 75V 150MA DO35	Active	Standard	75V	150mA	1V @ 50mA	Small Signal =< 200mA (Io), Any Speed	4ns	50nA @ 50V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
1N4448TAP	Vishay Semiconductor Diodes Division	DIODE GEN PURP 75V 150MA DO35	Active	Standard	75V	150mA	720mV @ 5mA	Small Signal =< 200mA (Io), Any Speed	8ns	5µA @ 75V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
1N4448X-TP	Micro Commercial Co	DIODE GEN PURP 75V 250MA SOD523	Active	Standard	75V	250mA	1.25V @ 150mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	2.5µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	SOD-523	-65°C ~ 150°C
S1ATR	SMC Diode Solutions	DIODE GEN PURP 50V 1A SMA	Active	Standard	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2.5µs	5µA @ 50V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-65°C ~ 175°C
S1JTR	SMC Diode Solutions	DIODE GEN PURP 600V 1A SMA	Active	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2.5µs	5µA @ 600V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-65°C ~ 175°C
S1MTR	SMC Diode Solutions	DIODE GEN PURP 1KV 1A SMA	Active	Standard	1000V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2.5µs	5µA @ 1000V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-65°C ~ 175°C

Manufacturers for Diodes - Rectifiers - Single