Part Number Manufacturer / Brand Brife Description Part StatusDiode TypeVoltage - DC Reverse (Vr) (Max)Current - Average Rectified (Io)Voltage - Forward (Vf) (Max) @ IfSpeedReverse Recovery Time (trr)Current - Reverse Leakage @ VrCapacitance @ Vr, FMounting TypePackage / CaseSupplier Device PackageOperating Temperature - Junction
Taiwan Semiconductor Corporation DIODE SCHOTTKY 30V 10A TO220AC ActiveSchottky30V10A550mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 30V
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Through HoleTO-220-2TO-220AC-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 10A TO220AC ActiveSchottky40V10A550mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 40V
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Through HoleTO-220-2TO-220AC-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 10A TO220AC ActiveSchottky60V10A700mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 60V
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Through HoleTO-220-2TO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 50V 8A TO220AC ActiveSchottky50V8A700mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 50V
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Through HoleTO-220-2TO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 8A TO220AC ActiveSchottky60V8A700mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 60V
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Through HoleTO-220-2TO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 5A ITO220AC ActiveSchottky100V5A850mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 100V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 90V 5A ITO220AC ActiveSchottky90V5A850mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 90V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 20V 12A DO201AD ActiveSchottky20V12A550mV @ 12AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 20V
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Through HoleDO-201AD, AxialDO-201AD-50°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 30V 12A DO201AD ActiveSchottky30V12A550mV @ 12AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 30V
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Through HoleDO-201AD, AxialDO-201AD-50°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 12A DO201AD ActiveSchottky40V12A550mV @ 12AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 40V
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Through HoleDO-201AD, AxialDO-201AD-50°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 20V 8A DO214AB ActiveSchottky20V8A550mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 20V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 30V 8A DO214AB ActiveSchottky30V8A550mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 30V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 8A DO214AB ActiveSchottky40V8A550mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 40V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 50V 8A DO214AB ActiveSchottky50V8A750mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 50V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 8A DO214AB ActiveSchottky60V8A750mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 60V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 30V 10A TO220AB ActiveSchottky30V10A550mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 30V
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Through HoleTO-220-3TO-220AB-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 10A TO220AB ActiveSchottky40V10A550mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 40V
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Through HoleTO-220-3TO-220AB-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 10A TO220AB ActiveSchottky60V10A700mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 60V
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Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 90V 10A TO220AB ActiveSchottky90V10A850mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 90V
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Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 8A TO220AC ActiveStandard200V8A975mV @ 8AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 200V100pF @ 4V, 1MHzThrough HoleTO-220-2TO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 150V 10A ITO220AB ActiveStandard150V10A975mV @ 5AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 150V70pF @ 4V, 1MHzThrough HoleTO-220-3 Full Pack, Isolated TabITO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 150V 10A ITO220AB ActiveStandard150V10A975mV @ 5AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 150V70pF @ 4V, 1MHzThrough HoleTO-220-3 Full Pack, Isolated TabITO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 5A ITO220AB ActiveStandard600V5A1.7V @ 2.5AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 600V50pF @ 4V, 1MHzThrough HoleTO-220-3 Full Pack, Isolated TabITO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 5A ITO220AC ActiveStandard300V5A1.3V @ 5AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 300V70pF @ 4V, 1MHzThrough HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 5A ITO220AC ActiveStandard400V5A1.3V @ 5AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 400V70pF @ 4V, 1MHzThrough HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 20A ITO220AC ActiveSchottky100V20A950mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 100V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 35V 20A ITO220AC ActiveSchottky35V20A750mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 35V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 45V 20A ITO220AC ActiveSchottky45V20A750mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 45V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 50V 20A ITO220AC ActiveSchottky50V20A820mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 50V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 20A ITO220AC ActiveSchottky60V20A820mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 60V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 90V 20A ITO220AC ActiveSchottky90V20A950mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 90V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHTKY 100V 7.5A ITO220AC ActiveSchottky100V7.5A920mV @ 7.5AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 100V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 90V 7.5A ITO220AC ActiveSchottky90V7.5A920mV @ 7.5AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 90V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 8A TO220AC ActiveStandard300V8A1.3V @ 8AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 300V60pF @ 4V, 1MHzThrough HoleTO-220-2TO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 10A TO220AC ActiveStandard50V10A975mV @ 10AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 50V70pF @ 4V, 1MHzThrough HoleTO-220-2TO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 10A TO220AC ActiveStandard100V10A975mV @ 10AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 100V70pF @ 4V, 1MHzThrough HoleTO-220-2TO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 150V 10A TO220AC ActiveStandard150V10A975mV @ 10AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 150V70pF @ 4V, 1MHzThrough HoleTO-220-2TO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 150V 10A TO220AC ActiveStandard150V10A1.05V @ 10AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 150V
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Through HoleTO-220-2TO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 10A TO220AC ActiveStandard200V10A1.05V @ 10AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 200V
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Through HoleTO-220-2TO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 200V 10A ITO220AC ActiveSchottky200V10A1.05V @ 10AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 200V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 35V 16A ITO220AC ActiveSchottky35V16A630mV @ 16AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 35V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 45V 16A ITO220AC ActiveSchottky45V16A630mV @ 16AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 45V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 50V 16A ITO220AC ActiveSchottky50V16A750mV @ 16AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 50V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 16A ITO220AC ActiveSchottky60V16A750mV @ 16AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 60V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 90V 16A ITO220AC ActiveSchottky90V16A850mV @ 16AFast Recovery =< 500ns, > 200mA (Io)
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300µA @ 90V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 10A ITO220AC ActiveSchottky150V10A1.05V @ 10AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 150V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 16A TO220AB ActiveStandard50V16A975mV @ 8AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 50V80pF @ 4V, 1MHzThrough HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 8A TO220AC ActiveStandard400V8A1.3V @ 8AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 400V60pF @ 4V, 1MHzThrough HoleTO-220-2TO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 45V 15A SMPC4.0 ActiveSchottky45V15A560mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
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300µA @ 45V
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Surface MountTO-277, 3-PowerDFNSMPC4.0-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 50V 15A SMPC4.0 ActiveSchottky50V15A560mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
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2mA @ 50V
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Surface MountTO-277, 3-PowerDFNSMPC4.0-55°C ~ 150°C