부품 번호 제조업체 / 브랜드 간단한 설명 부품 상태다이오드 구성다이오드 유형전압 - 직류 역전 (Vr) (최대)전류 - 평균 정류 된 (Io) (다이오드 당)전압 - 순방향 (Vf) (최대) @ If속도역 회복 시간 (trr)전류 - Vr의 역 누설작동 온도 - 정션실장 형패키지 / 케이스공급 업체 장치 패키지
IXYS-RF DIODE ARRAY SCHOTTKY 600V DE150 Active3 Common AnodeSilicon Carbide Schottky600V10A1.8V @ 5ANo Recovery Time > 500mA (Io)0ns50µA @ 600V-55°C ~ 175°CSurface Mount6-SMD, Flat Lead Exposed PadDE150
IXYS-RF DIODE ARRAY SCHOTTKY 600V DE150 Active3 Common CathodeSilicon Carbide Schottky600V10A1.8V @ 5ANo Recovery Time > 500mA (Io)0ns50µA @ 600V-55°C ~ 175°CSurface Mount6-SMD, Flat Lead Exposed PadDE150
IXYS-RF DIODE ARRAY SCHOTTKY 600V DE150 Active3 IndependentSilicon Carbide Schottky600V10A1.8V @ 5ANo Recovery Time > 500mA (Io)0ns50µA @ 600V-55°C ~ 175°CSurface Mount6-SMD, Flat Lead Exposed PadDE150
IXYS-RF DIODE ARRAY SCHOTTKY 1200V DE275 Active3 Common CathodeSilicon Carbide Schottky1200V5A1.8V @ 5ANo Recovery Time > 500mA (Io)0ns200µA @ 1200V-55°C ~ 175°CSurface Mount6-SMD, Flat Lead Exposed PadDE275
IXYS-RF DIODE ARRAY SCHOTTKY 1200V DE275 Active3 IndependentSilicon Carbide Schottky1200V5A1.8V @ 5ANo Recovery Time > 500mA (Io)0ns200µA @ 1200V-55°C ~ 175°CSurface Mount6-SMD, Flat Lead Exposed PadDE275
IXYS-RF DIODE ARRAY SCHOTTKY 1200V DE275 Active3 Common AnodeSilicon Carbide Schottky1200V5A1.8V @ 5ANo Recovery Time > 500mA (Io)0ns200µA @ 1200V-55°C ~ 175°CSurface Mount6-SMD, Flat Lead Exposed PadDE275