Artikelnummer Hersteller / Marke Kurze Beschreibung TeilstatusDiodenkonfigurationDioden-TypSpannung - DC Reverse (Vr) (Max)Strom - Durchschnittlich gleichgerichtet (Io) (pro Diode)Spannung - Vorwärts (Vf) (Max) @ IfGeschwindigkeitReverse Wiederherstellungszeit (trr)Strom - Rückwärtsleckage @ VrBetriebstemperatur - KreuzungBefestigungsartPaket / FallLieferantengerätepaket
IXYS-RF DIODE ARRAY SCHOTTKY 600V DE150 Active3 Common AnodeSilicon Carbide Schottky600V10A1.8V @ 5ANo Recovery Time > 500mA (Io)0ns50µA @ 600V-55°C ~ 175°CSurface Mount6-SMD, Flat Lead Exposed PadDE150
IXYS-RF DIODE ARRAY SCHOTTKY 600V DE150 Active3 Common CathodeSilicon Carbide Schottky600V10A1.8V @ 5ANo Recovery Time > 500mA (Io)0ns50µA @ 600V-55°C ~ 175°CSurface Mount6-SMD, Flat Lead Exposed PadDE150
IXYS-RF DIODE ARRAY SCHOTTKY 600V DE150 Active3 IndependentSilicon Carbide Schottky600V10A1.8V @ 5ANo Recovery Time > 500mA (Io)0ns50µA @ 600V-55°C ~ 175°CSurface Mount6-SMD, Flat Lead Exposed PadDE150
IXYS-RF DIODE ARRAY SCHOTTKY 1200V DE275 Active3 Common CathodeSilicon Carbide Schottky1200V5A1.8V @ 5ANo Recovery Time > 500mA (Io)0ns200µA @ 1200V-55°C ~ 175°CSurface Mount6-SMD, Flat Lead Exposed PadDE275
IXYS-RF DIODE ARRAY SCHOTTKY 1200V DE275 Active3 IndependentSilicon Carbide Schottky1200V5A1.8V @ 5ANo Recovery Time > 500mA (Io)0ns200µA @ 1200V-55°C ~ 175°CSurface Mount6-SMD, Flat Lead Exposed PadDE275
IXYS-RF DIODE ARRAY SCHOTTKY 1200V DE275 Active3 Common AnodeSilicon Carbide Schottky1200V5A1.8V @ 5ANo Recovery Time > 500mA (Io)0ns200µA @ 1200V-55°C ~ 175°CSurface Mount6-SMD, Flat Lead Exposed PadDE275