Taiwan Semiconductor Distributor - ダイオード - 整流器 - シングル - SK59CHM6G SF45GHA0G - CHIPSIC

品番	メーカー/ブランド	簡単な説明	部品ステータス	ダイオードタイプ	電圧 - DC逆（Vr）（最大）	電流 - 平均整流（Io）	電圧 - フォワード（Vf）（最大）@ If	速度	逆回復時間（trr）	電流 - 逆リーク（Vr）	容量Vr、F	取付タイプ	パッケージ/ケース	サプライヤデバイスパッケージ	動作温度 - ジャンクション
SK59CHM6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 5A DO214AB	Active	Schottky	90V	5A	850mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 90V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SF45GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 4A DO201AD	Active	Standard	300V	4A	1.3V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF46GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 4A DO201AD	Active	Standard	400V	4A	1.3V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF63GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 6A DO201AD	Active	Standard	150V	6A	975mV @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF64GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 6A DO201AD	Active	Standard	200V	6A	975mV @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF45GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 4A DO201AD	Active	Standard	300V	4A	1.3V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF46GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 4A DO201AD	Active	Standard	400V	4A	1.3V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF63GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 6A DO201AD	Active	Standard	150V	6A	975mV @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF64GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 6A DO201AD	Active	Standard	200V	6A	975mV @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
MUR4L20 A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 4A DO201AD	Active	Standard	200V	4A	890mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
MUR4L40 A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 4A DO201AD	Active	Standard	400V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
MUR4L60 A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 4A DO201AD	Active	Standard	600V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
S15GC M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 15A DO214AB	Active	Standard	400V	15A	1.1V @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 400V	93pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S15JC M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 15A DO214AB	Active	Standard	600V	15A	1.1V @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 600V	93pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
MUR420 R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 4A DO201AD	Active	Standard	200V	4A	890mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
MUR440 R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 4A DO201AD	Active	Standard	400V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
MUR4L20 R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 4A DO201AD	Active	Standard	200V	4A	890mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
MUR4L40 R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 4A DO201AD	Active	Standard	400V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
MUR4L60 R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 4A DO201AD	Active	Standard	600V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
MUR440 A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 4A DO201AD	Active	Standard	400V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
MUR420 B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 4A DO201AD	Active	Standard	200V	4A	890mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
MUR440 B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 4A DO201AD	Active	Standard	400V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
MUR4L20 B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 4A DO201AD	Active	Standard	200V	4A	890mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
MUR4L40 B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 4A DO201AD	Active	Standard	400V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
MUR4L60 B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 4A DO201AD	Active	Standard	600V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
MBR750 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 7.5A TO220AC	Active	Schottky	50V	7.5A	750mV @ 7.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 50V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
MBR760 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 7.5A TO220AC	Active	Schottky	60V	7.5A	750mV @ 7.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
MBR790 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 7.5A TO220AC	Active	Schottky	90V	7.5A	920mV @ 7.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SF65G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 6A DO201AD	Active	Standard	300V	6A	1.3V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF66G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 6A DO201AD	Active	Standard	400V	6A	1.3V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF65G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 6A DO201AD	Active	Standard	300V	6A	1.3V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF65G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 6A DO201AD	Active	Standard	300V	6A	1.3V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF66G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 6A DO201AD	Active	Standard	400V	6A	1.3V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR805HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 8A DO201AD	Active	Schottky	50V	8A	700mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR806HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 8A DO201AD	Active	Schottky	60V	8A	700mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR805HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 8A DO201AD	Active	Schottky	50V	8A	700mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR806HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 8A DO201AD	Active	Schottky	60V	8A	700mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
GPA801 C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 8A TO220AC	Active	Standard	50V	8A	1.1V @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	50pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
GPA802 C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 8A TO220AC	Active	Standard	100V	8A	1.1V @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	50pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
GPA803 C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 8A TO220AC	Active	Standard	200V	8A	1.1V @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	50pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
GPA804 C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 8A TO220AC	Active	Standard	400V	8A	1.1V @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	50pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
GPA805 C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 8A TO220AC	Active	Standard	600V	8A	1.1V @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	50pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
GPA806 C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 8A TO220AC	Active	Standard	800V	8A	1.1V @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	50pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
GPA807 C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 8A TO220AC	Active	Standard	-	8A	1.1V @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	50pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SR805HB0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 8A DO201AD	Active	Schottky	50V	8A	700mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR806HB0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 8A DO201AD	Active	Schottky	60V	8A	700mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF67G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 6A DO201AD	Active	Standard	500V	6A	1.7V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF68G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 6A DO201AD	Active	Standard	600V	6A	1.7V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF67G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 6A DO201AD	Active	Standard	500V	6A	1.7V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF67G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 6A DO201AD	Active	Standard	500V	6A	1.7V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C

のメーカー ダイオード - 整流器 - シングル

のメーカーダイオード - 整流器 - シングル