NXP Semiconductors Distributor - ダイオード - 整流器 - シングル - BAW62,113 BAW62,133

品番	メーカー/ブランド	簡単な説明	部品ステータス	ダイオードタイプ	電圧 - DC逆（Vr）（最大）	電流 - 平均整流（Io）	電圧 - フォワード（Vf）（最大）@ If	速度	逆回復時間（trr）	電流 - 逆リーク（Vr）	容量Vr、F	取付タイプ	パッケージ/ケース	サプライヤデバイスパッケージ	動作温度 - ジャンクション
BAW62,113	NXP USA Inc.	DIODE GEN PURP 75V 250MA ALF2	Obsolete	Standard	75V	250mA (DC)	1V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	5µA @ 75V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	ALF2	200°C (Max)
BAW62,133	NXP USA Inc.	DIODE GEN PURP 75V 250MA ALF2	Active	Standard	75V	250mA (DC)	1V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	5µA @ 75V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	ALF2	200°C (Max)
BAW62,143	NXP USA Inc.	DIODE GEN PURP 75V 250MA ALF2	Active	Standard	75V	250mA (DC)	1V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	5µA @ 75V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	ALF2	200°C (Max)
PRLL5817,115	NXP USA Inc.	DIODE SCHOTTKY 20V 1A MELF	Obsolete	Schottky	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 20V	70pF @ 4V, 1MHz	Surface Mount	SOD-87	MELF	125°C (Max)
PRLL5817,135	NXP USA Inc.	DIODE SCHOTTKY 20V 1A MELF	Obsolete	Schottky	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 20V	70pF @ 4V, 1MHz	Surface Mount	SOD-87	MELF	125°C (Max)
BAS16T,115	NXP USA Inc.	DIODE GEN PURP 100V 155MA SC75	Obsolete	Standard	100V	155mA (DC)	1.25V @ 150mA	Small Signal =< 200mA (Io), Any Speed	4ns	500nA @ 80V	1.5pF @ 0V, 1MHz	Surface Mount	SC-75, SOT-416	SC-75	150°C (Max)
1N4448,113	NXP USA Inc.	DIODE GEN PURP 100V 200MA ALF2	Obsolete	Standard	100V	200mA (DC)	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	25nA @ 20V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	ALF2	200°C (Max)
1N4448,143	NXP USA Inc.	DIODE GEN PURP 100V 200MA DO35	Obsolete	Standard	100V	200mA (DC)	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	25nA @ 20V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	200°C (Max)
BAS216,135	NXP USA Inc.	DIODE GEN PURP 75V 250MA SOD2	Obsolete	Standard	75V	250mA (DC)	1.25V @ 150mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	1µA @ 75V	1.5pF @ 0V, 1MHz	Surface Mount	SOD-110	SOD110	150°C (Max)
BAS216,115	NXP USA Inc.	DIODE GEN PURP 75V 250MA SOD2	Obsolete	Standard	75V	250mA (DC)	1.25V @ 150mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	1µA @ 75V	1.5pF @ 0V, 1MHz	Surface Mount	SOD-110	SOD110	150°C (Max)
BY359-1500,127	NXP USA Inc.	DIODE GEN PURP 1.5KV 10A TO220AC	Obsolete	Standard	1500V	10A (DC)	1.8V @ 20A	Standard Recovery >500ns, > 200mA (Io)	600ns	100µA @ 1300V	-	Through Hole	TO-220-2	TO-220AC	150°C (Max)
BY329-1500S,127	NXP USA Inc.	DIODE GEN PURP 1.5KV 6A TO220AC	Obsolete	Standard	1500V	6A (DC)	1.6V @ 6.5A	Fast Recovery =< 500ns, > 200mA (Io)	160ns	250µA @ 1300V	-	Through Hole	TO-220-2	TO-220AC	150°C (Max)
1PS193,135	NXP USA Inc.	DIODE GEN PURP 80V 215MA SMT3	Obsolete	Standard	80V	215mA (DC)	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	500nA @ 80V	1.5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3; MPAK	150°C (Max)
1PS193,115	NXP USA Inc.	DIODE GEN PURP 80V 215MA SMT3	Obsolete	Standard	80V	215mA (DC)	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	500nA @ 80V	1.5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3; MPAK	150°C (Max)
BY329X-1200,127	NXP USA Inc.	DIODE GEN PURP 1.2KV 8A TO220F	Obsolete	Standard	1200V	8A	1.85V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	145ns	1mA @ 1000V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220FP	150°C (Max)
1PS59SB20,115	NXP USA Inc.	DIODE SCHOTTKY 40V 500MA SMT3	Obsolete	Schottky	40V	500mA (DC)	550mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 35V	90pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3; MPAK	125°C (Max)
1N4148,113	NXP USA Inc.	DIODE GEN PURP 100V 200MA ALF2	Discontinued at -	Standard	100V	200mA (DC)	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	4ns	25nA @ 20V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	ALF2	200°C (Max)
1N4148,133	NXP USA Inc.	DIODE GEN PURP 100V 200MA ALF2	Obsolete	Standard	100V	200mA (DC)	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	4ns	25nA @ 20V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	ALF2	-
1N4148,143	NXP USA Inc.	DIODE GEN PURP 100V 200MA ALF2	Obsolete	Standard	100V	200mA (DC)	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	4ns	25nA @ 20V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	ALF2	200°C (Max)
PRLL4001,115	NXP USA Inc.	DIODE GEN PURP 50V MELF	Obsolete	Standard	50V	-	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	-	Surface Mount	SOD-87	MELF	-65°C ~ 175°C
PRLL5819,115	NXP USA Inc.	DIODE SCHOTTKY 40V 1A MELF	Obsolete	Schottky	40V	1A	600mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 40V	50pF @ 4V, 1MHz	Surface Mount	SOD-87	MELF	125°C (Max)
1N914B,113	NXP USA Inc.	DIODE GEN PURP 100V 200MA ALF2	Obsolete	Standard	100V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	ALF2	175°C (Max)
BYD17D,115	NXP USA Inc.	DIODE AVALANCHE 200V 1.5A MELF	Obsolete	Avalanche	200V	1.5A	1.05V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	1µA @ 200V	21pF @ 0V, 1MHz	Surface Mount	SOD-87	MELF	-65°C ~ 175°C
BYD17G,115	NXP USA Inc.	DIODE AVALANCHE 400V 1.5A MELF	Obsolete	Avalanche	400V	1.5A	1.05V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	1µA @ 400V	21pF @ 0V, 1MHz	Surface Mount	SOD-87	MELF	-65°C ~ 175°C
BYD17J,115	NXP USA Inc.	DIODE AVALANCHE 600V 1.5A MELF	Obsolete	Avalanche	600V	1.5A	1.05V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	1µA @ 600V	21pF @ 0V, 1MHz	Surface Mount	SOD-87	MELF	-65°C ~ 175°C
BYD37M,115	NXP USA Inc.	DIODE AVALANCHE 1KV 600MA MELF	Obsolete	Avalanche	1000V	600mA	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	1µA @ 1000V	20pF @ 0V, 1MHz	Surface Mount	SOD-87	MELF	-65°C ~ 175°C
BYD77B,115	NXP USA Inc.	DIODE AVALANCHE 100V 850MA MELF	Obsolete	Avalanche	100V	850mA	980mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 100V	50pF @ 0V, 1MHz	Surface Mount	SOD-87	MELF	-65°C ~ 175°C
BYD77D,115	NXP USA Inc.	DIODE AVALANCHE 200V 850MA MELF	Obsolete	Avalanche	200V	850mA	980mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 200V	50pF @ 0V, 1MHz	Surface Mount	SOD-87	MELF	-65°C ~ 175°C
BYD17K,135	NXP USA Inc.	DIODE AVALANCHE 800V 1.5A MELF	Obsolete	Avalanche	800V	1.5A	1.05V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	1µA @ 800V	21pF @ 0V, 1MHz	Surface Mount	SOD-87	MELF	-65°C ~ 175°C
BAT254,115	NXP USA Inc.	DIODE SCHOTTKY 30V 200MA SOD2	Obsolete	Schottky	30V	200mA (DC)	800mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	SOD-110	SOD110	125°C (Max)
PRLL5818,115	NXP USA Inc.	DIODE SCHOTTKY 30V 1A MELF	Obsolete	Schottky	30V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 30V	50pF @ 4V, 1MHz	Surface Mount	SOD-87	MELF	125°C (Max)
NUR460,133	NXP USA Inc.	DIODE GEN PURP 600V 4A DO201AD	Obsolete	Standard	600V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	50µA @ 600V	-	Through Hole	DO-201AD, Axial	DO-201AD	150°C (Max)
BAS116T,115	NXP USA Inc.	DIODE GEN PURP 75V 215MA SC75	Obsolete	Standard	75V	215mA (DC)	1.25V @ 150mA	Standard Recovery >500ns, > 200mA (Io)	3µs	5nA @ 75V	2pF @ 0V, 1MHz	Surface Mount	SC-75, SOT-416	SC-75	150°C (Max)
BAT54T,115	NXP USA Inc.	DIODE SCHOTTKY 30V 200MA SC75	Obsolete	Schottky	30V	200mA (DC)	800mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	SC-75, SOT-416	SC-75	150°C (Max)

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