Taiwan Semiconductor Distributor - ダイオード - 整流器 - シングル - S12KC V7G HS5G V6G - CHIPSIC

品番	メーカー/ブランド	簡単な説明	部品ステータス	ダイオードタイプ	電圧 - DC逆（Vr）（最大）	電流 - 平均整流（Io）	電圧 - フォワード（Vf）（最大）@ If	速度	逆回復時間（trr）	電流 - 逆リーク（Vr）	容量Vr、F	取付タイプ	パッケージ/ケース	サプライヤデバイスパッケージ	動作温度 - ジャンクション
S12KC V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 12A DO214AB	Active	Standard	800V	12A	1.1V @ 12A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 800V	78pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS5G V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 5A DO214AB	Active	Standard	400V	5A	-	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS5J V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 5A DO214AB	Active	Standard	600V	5A	-	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SF31GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO201AD	Active	Standard	50V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF32GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO201AD	Active	Standard	100V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF33GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 3A DO201AD	Active	Standard	150V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF34GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO201AD	Active	Standard	200V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF35GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 3A DO201AD	Active	Standard	300V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF36GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO201AD	Active	Standard	400V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF37GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 3A DO201AD	Active	Standard	500V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF38GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO201AD	Active	Standard	600V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
6A100GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 6A R-6	Active	Standard	1000V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 1000V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
SF31GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO201AD	Active	Standard	50V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF32GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO201AD	Active	Standard	100V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF33GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 3A DO201AD	Active	Standard	150V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF34GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO201AD	Active	Standard	200V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF35GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 3A DO201AD	Active	Standard	300V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF36GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO201AD	Active	Standard	400V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF37GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 3A DO201AD	Active	Standard	500V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF38GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO201AD	Active	Standard	600V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF31GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO201AD	Active	Standard	50V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF32GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO201AD	Active	Standard	100V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF33GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 3A DO201AD	Active	Standard	150V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF34GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO201AD	Active	Standard	200V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF35GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 3A DO201AD	Active	Standard	300V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF36GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO201AD	Active	Standard	400V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF37GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 3A DO201AD	Active	Standard	500V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
6A100GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 6A R-6	Active	Standard	1000V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 1000V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
SK56C M6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 5A DO214AB	Not For New Designs	Schottky	60V	5A	750mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK310BHR5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 3A DO214AA	Active	Schottky	100V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SK315BHR5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 3A DO214AA	Active	Schottky	150V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SK59B R5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 5A DO214AA	Active	Schottky	90V	5A	850mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
MUR420SHR7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 4A DO214AB	Active	Standard	200V	4A	1.25V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	65pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
MUR440SHR7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 4A DO214AB	Active	Standard	400V	4A	1.25V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	65pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
S12GCHR7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 12A DO214AB	Active	Standard	400V	12A	1.1V @ 12A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 400V	78pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S12JCHR7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 12A DO214AB	Active	Standard	600V	12A	1.1V @ 12A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 600V	78pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SS310HR7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB	Active	Standard	100V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
6A100GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 6A R-6	Active	Standard	1000V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 1000V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
SF38GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO201AD	Active	Standard	600V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SS39 V7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 3A 90V DO-214AB	Active	Schottky	90V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS5K M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 5A DO214AB	Not For New Designs	Standard	800V	5A	1.7V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 800V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS5K V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 5A DO214AB	Active	Standard	800V	5A	-	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 800V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS5M V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 5A DO214AB	Active	Standard	-	5A	-	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 1000V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S10KC M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 10A DO214AB	Not For New Designs	Standard	800V	10A	1.1V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 800V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S10MC M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 10A DO214AB	Not For New Designs	Standard	-	10A	1.1V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 1000V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
MUR340SBHR5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AA	Active	Standard	400V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
SSL32 M6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 3A DO214AB	Not For New Designs	Schottky	20V	3A	410mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 20V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 125°C
SSL32 V6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 3A 20V DO-214AB	Active	Schottky	20V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 20V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 125°C
SSL33 V6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 3A 30V DO-214AB	Active	Schottky	30V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 125°C
SSL34 V6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 3A 40V DO-214AB	Active	Schottky	40V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 125°C

のメーカー ダイオード - 整流器 - シングル

のメーカーダイオード - 整流器 - シングル