Taiwan Semiconductor Distributor - ダイオード - 整流器 - シングル - SR804HR0G S15JCHR7G - CHIPSIC

品番	メーカー/ブランド	簡単な説明	部品ステータス	ダイオードタイプ	電圧 - DC逆（Vr）（最大）	電流 - 平均整流（Io）	電圧 - フォワード（Vf）（最大）@ If	速度	逆回復時間（trr）	電流 - 逆リーク（Vr）	容量Vr、F	取付タイプ	パッケージ/ケース	サプライヤデバイスパッケージ	動作温度 - ジャンクション
SR804HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 8A DO201AD	Active	Schottky	40V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
S15JCHR7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 15A DO214AB	Active	Standard	600V	15A	1.1V @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 600V	93pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S15KCHR7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 15A DO214AB	Active	Standard	800V	15A	1.1V @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 800V	93pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SF47GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 4A DO201AD	Active	Standard	500V	4A	1.7V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF48GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 4A DO201AD	Active	Standard	600V	4A	1.7V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF61GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 6A DO201AD	Active	Standard	50V	6A	975mV @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF62GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 6A DO201AD	Active	Standard	100V	6A	975mV @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR802HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 8A DO201AD	Active	Schottky	20V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SR803HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 8A DO201AD	Active	Schottky	30V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SR804HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 8A DO201AD	Active	Schottky	40V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SF47GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 4A DO201AD	Active	Standard	500V	4A	1.7V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF48GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 4A DO201AD	Active	Standard	600V	4A	1.7V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF61GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 6A DO201AD	Active	Standard	50V	6A	975mV @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF62GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 6A DO201AD	Active	Standard	100V	6A	975mV @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR802HB0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 8A DO201AD	Active	Schottky	20V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SR803HB0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 8A DO201AD	Active	Schottky	30V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SR804HB0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 8A DO201AD	Active	Schottky	40V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SF63G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 6A DO201AD	Active	Standard	150V	6A	975mV @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF64G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 6A DO201AD	Active	Standard	200V	6A	975mV @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF63G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 6A DO201AD	Active	Standard	150V	6A	975mV @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF63G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 6A DO201AD	Active	Standard	150V	6A	975mV @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF64G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 6A DO201AD	Active	Standard	200V	6A	975mV @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SS315 R7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 3A DO214AB	Not For New Designs	Schottky	150V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SS315 V7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 3A 150V DO-214AB	Active	Schottky	150V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
MBR735 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 35V 7.5A TO220AC	Active	Schottky	35V	7.5A	840mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 35V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
MBR745 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 45V 7.5A TO220AC	Active	Schottky	45V	7.5A	840mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 45V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
HER601G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 6A R-6	Active	Standard	50V	6A	1V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 50V	80pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
HER602G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 6A R-6	Active	Standard	100V	6A	1V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 100V	80pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
HER603G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 6A R-6	Active	Standard	200V	6A	1V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 200V	80pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
HER604G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 6A R-6	Active	Standard	300V	6A	1V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 300V	80pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
HER605G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 6A R-6	Active	Standard	400V	6A	1.3V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	80pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
HER606G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 6A R-6	Active	Standard	600V	6A	1.7V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	65pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
HER601G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 6A R-6	Active	Standard	50V	6A	1V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 50V	80pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
HER602G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 6A R-6	Active	Standard	100V	6A	1V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 100V	80pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
HER603G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 6A R-6	Active	Standard	200V	6A	1V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 200V	80pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
HER604G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 6A R-6	Active	Standard	300V	6A	1V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 300V	80pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
HER605G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 6A R-6	Active	Standard	400V	6A	1.3V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	80pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
HER606G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 6A R-6	Active	Standard	600V	6A	1.7V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	65pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
HER601G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 6A R-6	Active	Standard	50V	6A	1V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 50V	80pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
HER602G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 6A R-6	Active	Standard	100V	6A	1V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 100V	80pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
HER603G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 6A R-6	Active	Standard	200V	6A	1V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 200V	80pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
HER604G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 6A R-6	Active	Standard	300V	6A	1V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 300V	80pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
HER605G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 6A R-6	Active	Standard	400V	6A	1.3V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	80pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
HER606G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 6A R-6	Active	Standard	600V	6A	1.7V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	65pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
S15KC M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 15A DO214AB	Active	Standard	800V	15A	1.1V @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 800V	93pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S15MC M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 15A DO214AB	Active	Standard	-	15A	1.1V @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 1000V	93pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SF45GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 4A DO201AD	Active	Standard	300V	4A	1.3V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF46GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 4A DO201AD	Active	Standard	400V	4A	1.3V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF63GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 6A DO201AD	Active	Standard	150V	6A	975mV @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF64GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 6A DO201AD	Active	Standard	200V	6A	975mV @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C

のメーカー ダイオード - 整流器 - シングル

のメーカーダイオード - 整流器 - シングル