Numero di parte Produttore / Marca Breve descrizione Stato parteTipo FETCaratteristica FETDrain to Source Voltage (Vdss)Corrente - Scarico continuo (Id) @ 25 ° CRds On (Max) @ Id, VgsVgs (th) (Max) @ IdGate Charge (Qg) (Max) @ VgsCapacità di ingresso (Ciss) (Max) @ VdsPotenza - Maxtemperatura di esercizioTipo di montaggioPacchetto / casoPacchetto dispositivo fornitore
EPC TRANSISTOR GAN ASYMMETRICAL HALF BRID Active2 N-Channel (Half Bridge)GaNFET (Gallium Nitride)30V10A (Ta), 40A (Ta)8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V2.5V @ 4mA, 2.5V @ 16mA4.9nC @ 15V, 19nC @ 15V475pF @ 15V, 1960pF @ 15V
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-40°C ~ 150°C (TJ)Surface MountDieDie
EPC TRANSISTOR GAN SYM HALF BRDG 80V Active2 N-Channel (Half Bridge)GaNFET (Gallium Nitride)80V23A5.5 mOhm @ 20A, 5V2.5V @ 7mA6.5nC @ 5V7600pF @ 40V
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Surface MountDieDie
EPC TRANSISTOR GAN 2N-CH 100V BUMPED DIE Active2 N-Channel (Half Bridge)GaNFET (Gallium Nitride)100V1.7A70 mOhm @ 2A, 5V2.5V @ 600µA0.73nC @ 5V75pF @ 50V
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-40°C ~ 150°C (TJ)Surface MountDieDie
EPC TRANSISTOR GAN SYM 100V BUMPED DIE Active2 N-Channel (Half Bridge)GaNFET (Gallium Nitride)100V1.7A70 mOhm @ 2A, 5V2.5V @ 600µA0.73nC @ 5V75pF @ 50V
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-40°C ~ 150°C (TJ)Surface MountDieDie
EPC MOSFET 2NCH 100V 23A DIE Active2 N-Channel (Half Bridge)GaNFET (Gallium Nitride)100V23A6.3 mOhm @ 20A, 5V2.5V @ 5.5mA7nC @ 5V800pF @ 50V
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-40°C ~ 150°C (TJ)Surface MountDieDie
EPC TRANSISTOR GAN 2N-CH 120V BUMPED DIE Active2 N-Channel (Dual) Common SourceGaNFET (Gallium Nitride)120V3.4A60 mOhm @ 4A, 5V2.5V @ 700µA0.8nC @ 5V80pF @ 60V
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-40°C ~ 150°C (TJ)Surface MountDieDie
EPC TRANSISTOR GAN 3N-CH BUMPED DIE Active3 N-Channel (Half Bridge + Synchronous Bootstrap)GaNFET (Gallium Nitride)60V, 100V1.7A, 500mA190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V2.5V @ 100µA, 2.5V @ 20µA0.22nC @ 5V, 0.044nC @ 5V22pF @ 30V, 7pF @ 30V
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-40°C ~ 150°C (TJ)Surface Mount9-VFBGA9-BGA (1.35x1.35)
EPC MOSFET 3 N-CH 60V/100V 9BGA Active3 N-Channel (Half Bridge + Synchronous Bootstrap)GaNFET (Gallium Nitride)60V, 100V1.7A, 500mA190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V2.5V @ 100µA, 2.5V @ 20µA0.22nC @ 5V, 0.044nC @ 5V22pF @ 30V, 7pF @ 30V
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-40°C ~ 150°C (TJ)Surface Mount9-VFBGA9-BGA (1.35x1.35)
EPC MOSFET 3 N-CH 100V 9BGA Active3 N-Channel (Half Bridge + Synchronous Bootstrap)GaNFET (Gallium Nitride)100V1.7A, 500mA320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V2.5V @ 100µA, 2.5V @ 20µA0.16nC @ 5V, 0.044nC @ 5V16pF @ 50V, 7pF @ 50V
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-40°C ~ 150°C (TJ)Surface Mount9-VFBGA9-BGA (1.35x1.35)
EPC TRANSISTOR GAN ASYMMETRICAL HALF BRID Active2 N-Channel (Half Bridge)GaNFET (Gallium Nitride)30V16A (Ta)19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V2.5V @ 5mA2.2nC @ 5V, 5.7nC @ 5V230pF @ 15V, 590pF @ 15V
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-40°C ~ 150°C (TJ)Surface MountDieDie
EPC TRANSISTOR GAN ASYMMETRICAL HALF BRID Active2 N-Channel (Half Bridge)GaNFET (Gallium Nitride)30V16A (Ta)19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V2.5V @ 5mA2.2nC @ 5V, 5.7nC @ 5V230pF @ 15V, 590pF @ 15V
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-40°C ~ 150°C (TJ)Surface MountDieDie
EPC MOSFET 2 N-CH 30V 9.5A/38A DIE Active2 N-Channel (Half Bridge)GaNFET (Gallium Nitride)30V10A (Ta), 40A (Ta)8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V2.5V @ 4mA, 2.5V @ 16mA4.9nC @ 15V, 19nC @ 15V475pF @ 15V, 1960pF @ 15V
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-40°C ~ 150°C (TJ)Surface MountDieDie
EPC TRANSISTOR GAN SYMMETRICAL HALF BRIDG Active2 N-Channel (Half Bridge)GaNFET (Gallium Nitride)60V23A4.4 mOhm @ 20A, 5V2.5V @ 7mA6.8nC @ 5V830pF @ 30V
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-40°C ~ 150°C (TJ)Surface MountDieDie
EPC MOSFET 2 N-CHANNEL 60V 23A DIE Active2 N-Channel (Half Bridge)GaNFET (Gallium Nitride)60V23A (Tj)4.4 mOhm @ 20A, 5V2.5V @ 7mA6.8nC @ 5V830pF @ 30V
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-40°C ~ 150°C (TJ)Surface MountDieDie
EPC TRANSISTOR GAN ASYMMETRICAL HALF BRID Active2 N-Channel (Half Bridge)GaNFET (Gallium Nitride)60V9.5A, 38A11.5 mOhm @ 20A, 5V, 2.7 mOhm @ 20A, 5V2.5V @ 3mA, 2.5V @ 12mA2.7nC @ 5V, 12nC @ 5V300pF @ 30V, 1200pF @ 30V
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-40°C ~ 150°C (TJ)Surface MountDieDie
EPC TRANSISTOR GAN ASYMMETRICAL HALF BRID Active2 N-Channel (Half Bridge)GaNFET (Gallium Nitride)60V9.5A, 38A11.5 mOhm @ 20A, 5V2.5V @ 2mA2.7nC @ 5V300pF @ 30V
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-40°C ~ 150°C (TJ)Surface MountDieDie
EPC TRANSISTOR GAN SYMMETRICAL HALF BRIDG Active2 N-Channel (Half Bridge)GaNFET (Gallium Nitride)80V28A5.5 mOhm @ 20A, 5V2.5V @ 7mA6.5nC @ 5V760pF @ 40V
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-40°C ~ 150°C (TJ)Surface MountDieDie
EPC TRANSISTOR GAN ASYMMETRICAL HALF BRID Active2 N-Channel (Half Bridge)GaNFET (Gallium Nitride)80V9.5A, 38A14.5 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V2.5V @ 2.5mA, 2.5V @ 10mA2.5nC @ 5V, 10nC @ 5V300pF @ 40V, 1100pF @ 40V
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-40°C ~ 150°C (TJ)Surface MountDieDie
EPC MOSFET 2NCH 80V 9.5A DIE Active2 N-Channel (Half Bridge)GaNFET (Gallium Nitride)80V9.5A14.5 mOhm @ 20A, 5V2.5V @ 2.5mA2.5nC @ 5V300pF @ 40V
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-40°C ~ 150°C (TJ)Surface MountDieDie
EPC TRANSISTOR GAN SYMMETRICAL HALF BRIDG Active2 N-Channel (Half Bridge)GaNFET (Gallium Nitride)100V23A6.3 mOhm @ 20A, 5V2.5V @ 5.5mA7nC @ 5V800pF @ 50V
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-40°C ~ 150°C (TJ)Surface MountDieDie
EPC MOSFET 2NCH 120V 3.4A DIE Active2 N-Channel (Dual) Common DrainGaNFET (Gallium Nitride)120V3.4A60 mOhm @ 4A, 5V2.5V @ 700µA0.8nC @ 5V80pF @ 60V
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-40°C ~ 150°C (TJ)
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DieDie
EPC TRANSISTOR GAN 3N-CH 100V BUMPED DIE Active3 N-Channel (Half Bridge + Synchronous Bootstrap)GaNFET (Gallium Nitride)100V1.7A, 500mA320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V2.5V @ 100µA, 2.5V @ 20µA0.16nC @ 5V, 0.044nC @ 5V16pF @ 50V, 7pF @ 50V
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-40°C ~ 150°C (TJ)Surface Mount9-VFBGA9-BGA (1.35x1.35)