EPC Distributor - Transistor - FET, MOSFET - Array - EPC2100 EPC2103ENGRT

Numero di parte	Produttore / Marca	Breve descrizione	Stato parte	Tipo FET	Caratteristica FET	Drain to Source Voltage (Vdss)	Corrente - Scarico continuo (Id) @ 25 ° C	Rds On (Max) @ Id, Vgs	Vgs (th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Capacità di ingresso (Ciss) (Max) @ Vds	Potenza - Max	temperatura di esercizio	Tipo di montaggio	Pacchetto / caso	Pacchetto dispositivo fornitore
EPC2100	EPC	TRANSISTOR GAN ASYMMETRICAL HALF BRID	Active	2 N-Channel (Half Bridge)	GaNFET (Gallium Nitride)	30V	10A (Ta), 40A (Ta)	8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V	2.5V @ 4mA, 2.5V @ 16mA	4.9nC @ 15V, 19nC @ 15V	475pF @ 15V, 1960pF @ 15V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
EPC2103ENGRT	EPC	TRANSISTOR GAN SYM HALF BRDG 80V	Active	2 N-Channel (Half Bridge)	GaNFET (Gallium Nitride)	80V	23A	5.5 mOhm @ 20A, 5V	2.5V @ 7mA	6.5nC @ 5V	7600pF @ 40V	-	-	Surface Mount	Die	Die
EPC2106ENGRT	EPC	TRANSISTOR GAN 2N-CH 100V BUMPED DIE	Active	2 N-Channel (Half Bridge)	GaNFET (Gallium Nitride)	100V	1.7A	70 mOhm @ 2A, 5V	2.5V @ 600µA	0.73nC @ 5V	75pF @ 50V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
EPC2106	EPC	TRANSISTOR GAN SYM 100V BUMPED DIE	Active	2 N-Channel (Half Bridge)	GaNFET (Gallium Nitride)	100V	1.7A	70 mOhm @ 2A, 5V	2.5V @ 600µA	0.73nC @ 5V	75pF @ 50V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
EPC2104ENGRT	EPC	MOSFET 2NCH 100V 23A DIE	Active	2 N-Channel (Half Bridge)	GaNFET (Gallium Nitride)	100V	23A	6.3 mOhm @ 20A, 5V	2.5V @ 5.5mA	7nC @ 5V	800pF @ 50V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
EPC2110ENGRT	EPC	TRANSISTOR GAN 2N-CH 120V BUMPED DIE	Active	2 N-Channel (Dual) Common Source	GaNFET (Gallium Nitride)	120V	3.4A	60 mOhm @ 4A, 5V	2.5V @ 700µA	0.8nC @ 5V	80pF @ 60V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
EPC2108ENGRT	EPC	TRANSISTOR GAN 3N-CH BUMPED DIE	Active	3 N-Channel (Half Bridge + Synchronous Bootstrap)	GaNFET (Gallium Nitride)	60V, 100V	1.7A, 500mA	190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V	2.5V @ 100µA, 2.5V @ 20µA	0.22nC @ 5V, 0.044nC @ 5V	22pF @ 30V, 7pF @ 30V	-	-40°C ~ 150°C (TJ)	Surface Mount	9-VFBGA	9-BGA (1.35x1.35)
EPC2108	EPC	MOSFET 3 N-CH 60V/100V 9BGA	Active	3 N-Channel (Half Bridge + Synchronous Bootstrap)	GaNFET (Gallium Nitride)	60V, 100V	1.7A, 500mA	190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V	2.5V @ 100µA, 2.5V @ 20µA	0.22nC @ 5V, 0.044nC @ 5V	22pF @ 30V, 7pF @ 30V	-	-40°C ~ 150°C (TJ)	Surface Mount	9-VFBGA	9-BGA (1.35x1.35)
EPC2107	EPC	MOSFET 3 N-CH 100V 9BGA	Active	3 N-Channel (Half Bridge + Synchronous Bootstrap)	GaNFET (Gallium Nitride)	100V	1.7A, 500mA	320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V	2.5V @ 100µA, 2.5V @ 20µA	0.16nC @ 5V, 0.044nC @ 5V	16pF @ 50V, 7pF @ 50V	-	-40°C ~ 150°C (TJ)	Surface Mount	9-VFBGA	9-BGA (1.35x1.35)
EPC2111	EPC	TRANSISTOR GAN ASYMMETRICAL HALF BRID	Active	2 N-Channel (Half Bridge)	GaNFET (Gallium Nitride)	30V	16A (Ta)	19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V	2.5V @ 5mA	2.2nC @ 5V, 5.7nC @ 5V	230pF @ 15V, 590pF @ 15V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
EPC2111ENGRT	EPC	TRANSISTOR GAN ASYMMETRICAL HALF BRID	Active	2 N-Channel (Half Bridge)	GaNFET (Gallium Nitride)	30V	16A (Ta)	19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V	2.5V @ 5mA	2.2nC @ 5V, 5.7nC @ 5V	230pF @ 15V, 590pF @ 15V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
EPC2100ENGRT	EPC	MOSFET 2 N-CH 30V 9.5A/38A DIE	Active	2 N-Channel (Half Bridge)	GaNFET (Gallium Nitride)	30V	10A (Ta), 40A (Ta)	8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V	2.5V @ 4mA, 2.5V @ 16mA	4.9nC @ 15V, 19nC @ 15V	475pF @ 15V, 1960pF @ 15V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
EPC2102	EPC	TRANSISTOR GAN SYMMETRICAL HALF BRIDG	Active	2 N-Channel (Half Bridge)	GaNFET (Gallium Nitride)	60V	23A	4.4 mOhm @ 20A, 5V	2.5V @ 7mA	6.8nC @ 5V	830pF @ 30V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
EPC2102ENGRT	EPC	MOSFET 2 N-CHANNEL 60V 23A DIE	Active	2 N-Channel (Half Bridge)	GaNFET (Gallium Nitride)	60V	23A (Tj)	4.4 mOhm @ 20A, 5V	2.5V @ 7mA	6.8nC @ 5V	830pF @ 30V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
EPC2101	EPC	TRANSISTOR GAN ASYMMETRICAL HALF BRID	Active	2 N-Channel (Half Bridge)	GaNFET (Gallium Nitride)	60V	9.5A, 38A	11.5 mOhm @ 20A, 5V, 2.7 mOhm @ 20A, 5V	2.5V @ 3mA, 2.5V @ 12mA	2.7nC @ 5V, 12nC @ 5V	300pF @ 30V, 1200pF @ 30V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
EPC2101ENGRT	EPC	TRANSISTOR GAN ASYMMETRICAL HALF BRID	Active	2 N-Channel (Half Bridge)	GaNFET (Gallium Nitride)	60V	9.5A, 38A	11.5 mOhm @ 20A, 5V	2.5V @ 2mA	2.7nC @ 5V	300pF @ 30V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
EPC2103	EPC	TRANSISTOR GAN SYMMETRICAL HALF BRIDG	Active	2 N-Channel (Half Bridge)	GaNFET (Gallium Nitride)	80V	28A	5.5 mOhm @ 20A, 5V	2.5V @ 7mA	6.5nC @ 5V	760pF @ 40V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
EPC2105	EPC	TRANSISTOR GAN ASYMMETRICAL HALF BRID	Active	2 N-Channel (Half Bridge)	GaNFET (Gallium Nitride)	80V	9.5A, 38A	14.5 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V	2.5V @ 2.5mA, 2.5V @ 10mA	2.5nC @ 5V, 10nC @ 5V	300pF @ 40V, 1100pF @ 40V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
EPC2105ENGRT	EPC	MOSFET 2NCH 80V 9.5A DIE	Active	2 N-Channel (Half Bridge)	GaNFET (Gallium Nitride)	80V	9.5A	14.5 mOhm @ 20A, 5V	2.5V @ 2.5mA	2.5nC @ 5V	300pF @ 40V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
EPC2104	EPC	TRANSISTOR GAN SYMMETRICAL HALF BRIDG	Active	2 N-Channel (Half Bridge)	GaNFET (Gallium Nitride)	100V	23A	6.3 mOhm @ 20A, 5V	2.5V @ 5.5mA	7nC @ 5V	800pF @ 50V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
EPC2110	EPC	MOSFET 2NCH 120V 3.4A DIE	Active	2 N-Channel (Dual) Common Drain	GaNFET (Gallium Nitride)	120V	3.4A	60 mOhm @ 4A, 5V	2.5V @ 700µA	0.8nC @ 5V	80pF @ 60V	-	-40°C ~ 150°C (TJ)	-	Die	Die
EPC2107ENGRT	EPC	TRANSISTOR GAN 3N-CH 100V BUMPED DIE	Active	3 N-Channel (Half Bridge + Synchronous Bootstrap)	GaNFET (Gallium Nitride)	100V	1.7A, 500mA	320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V	2.5V @ 100µA, 2.5V @ 20µA	0.16nC @ 5V, 0.044nC @ 5V	16pF @ 50V, 7pF @ 50V	-	-40°C ~ 150°C (TJ)	Surface Mount	9-VFBGA	9-BGA (1.35x1.35)

Produttori per Transistor - FET, MOSFET - Array