Manufacturer Part NumberGA50JT06-258
Manufacturer / BrandGeneSiC Semiconductor
Available Quantity88080 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionTRANSISTOR SJT 600V 100A
Product CategoryTransistors - FETs, MOSFETs - Single
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download GA50JT06-258.pdf

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Part Number
GA50JT06-258
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Active
FET Type
-
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
600V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
25 mOhm @ 50A
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
769W (Tc)
Operating Temperature
-55°C ~ 225°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-258
Package / Case
TO-258-3, TO-258AA
Weight
Contact us
Application
Email for details
Replacement Part
GA50JT06-258

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