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  4. Diodos - Rectificadores
- Simple
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Fabricantes de Diodos - Rectificadores
- Simple

AVX Corporation
Bourns
Central Semiconductor
Comchip Technology
Sensata Technologies – Crydom
Diodes Incorporated
GeneSiC Semiconductor
Global Power Technologies Group, Inc.
Infineon Technologies
IXYS Corporation
Littelfuse
MACOM Technology Solutions
Micro Commercial Components (MCC)
Microsemi
Nexperia
NXP Semiconductors
ON Semiconductor
Panasonic
Phoenix Contact
Power Integrations
Powerex, Inc.
Renesas Electronics America
ROHM Semiconductor
Sanken Electric Co., Ltd.
Semtech
SMC Diode Solutions
Esterline Connection Technologies
STMicroelectronics
Taiwan Semiconductor
Texas Instruments
Torex Semiconductor
Toshiba Semiconductor and Storage
TT Electronics/Optek Technology
Vishay
WeEn Semiconductors Co., Ltd
Wolfspeed
Número de pieza Fabricante / Marca Breve descripción Estado de la piezaTipo de diodoVoltaje - DC Reverse (Vr) (Max)Corriente - promedio rectificado (Io)Voltaje - Adelante (Vf) (Máx) @ SiVelocidadTiempo de recuperación inversa (trr)Current - Reverse Leakage @ VrCapacitancia @ Vr, FTipo de montajePaquete / cajaPaquete de dispositivo del proveedorTemperatura de funcionamiento - unión
1N5195
 Microsemi Corporation DIODE GEN PURP 180V 200MA DO35 ActiveStandard180V200mA1V @ 100mASmall Signal =< 200mA (Io), Any Speed
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25nA @ 180V
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Through HoleDO-204AH, DO-35, AxialDO-35-65°C ~ 175°C
1N5196
 Microsemi Corporation DIODE GEN PURP 225V 200MA DO35 ActiveStandard225V200mA1V @ 100mASmall Signal =< 200mA (Io), Any Speed
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25nA @ 225V
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Through HoleDO-204AH, DO-35, AxialDO-35-65°C ~ 175°C
1N6638US
 Microsemi Corporation DIODE GEN PURPOSE Active
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JAN1N5802
 Microsemi Corporation DIODE GEN PURP 50V 2.5A AXIAL ActiveStandard50V2.5A975mV @ 2.5AFast Recovery =< 500ns, > 200mA (Io)25ns1µA @ 50V25pF @ 10V, 1MHzThrough HoleA, Axial
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-65°C ~ 175°C
JAN1N5804
 Microsemi Corporation DIODE GEN PURP 100V 2.5A AXIAL ActiveStandard100V2.5A975mV @ 2.5AFast Recovery =< 500ns, > 200mA (Io)25ns1µA @ 100V25pF @ 10V, 1MHzThrough HoleA, Axial
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-65°C ~ 175°C
JAN1N5415
 Microsemi Corporation DIODE GEN PURP 50V 3A AXIAL ActiveStandard50V3A1.5V @ 9AFast Recovery =< 500ns, > 200mA (Io)150ns1µA @ 50V
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Through HoleB, Axial
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-65°C ~ 175°C
JAN1N5416
 Microsemi Corporation DIODE GEN PURP 100V 3A AXIAL ActiveStandard100V3A1.5V @ 9AFast Recovery =< 500ns, > 200mA (Io)150ns1µA @ 100V
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Through HoleB, Axial
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-65°C ~ 175°C
JAN1N5418
 Microsemi Corporation DIODE GEN PURP 400V 3A AXIAL ActiveStandard400V3A1.5V @ 9AFast Recovery =< 500ns, > 200mA (Io)150ns1µA @ 400V
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Through HoleB, Axial
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-65°C ~ 175°C
CDLL5818
 Microsemi Corporation DIODE SCHOTTKY 30V 1A DO213AB ActiveSchottky30V1A600mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 30V0.9pF @ 5V, 1MHzSurface MountDO-213AB, MELFDO-213AB-65°C ~ 150°C
JANTXV1N3595A-1
 Microsemi Corporation DIODE GEN PURP 125V 150MA DO35 ActiveStandard125V150mA920mV @ 100mASmall Signal =< 200mA (Io), Any Speed3µs2nA @ 125V
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Through HoleDO-204AH, DO-35, AxialDO-35-65°C ~ 175°C
JANTX1N4944
 Microsemi Corporation DIODE GEN PURP 400V 1A AXIAL ActiveStandard400V1A1.3V @ 1AFast Recovery =< 500ns, > 200mA (Io)150ns1µA @ 400V
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Through HoleA, Axial
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-65°C ~ 175°C
JAN1N3595UR-1
 Microsemi Corporation DIODE GP 125V 150MA DO213AA ActiveStandard125V150mA920mV @ 100mASmall Signal =< 200mA (Io), Any Speed3µs1nA @ 125V
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Surface MountDO-213AADO-213AA-65°C ~ 175°C
JAN1N6639
 Microsemi Corporation DIODE GEN PURP 75V 300MA AXIAL ActiveStandard75V300mA1.2V @ 300mAFast Recovery =< 500ns, > 200mA (Io)4ns100nA @ 75V
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Through HoleD, AxialD-5D-65°C ~ 175°C
JAN1N6640
 Microsemi Corporation DIODE GEN PURP 50V 300MA AXIAL ActiveStandard50V300mA1V @ 300mAFast Recovery =< 500ns, > 200mA (Io)4ns100nA @ 50V
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Through HoleD, Axial
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-65°C ~ 175°C
JAN1N6641
 Microsemi Corporation DIODE GEN PURP 50V 300MA AXIAL ActiveStandard50V300mA1.1V @ 300mAFast Recovery =< 500ns, > 200mA (Io)5ns100nA @ 50V
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Through HoleD, Axial
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-65°C ~ 175°C
JAN1N6642
 Microsemi Corporation DIODE GEN PURP 75V 300MA AXIAL ActiveStandard75V300mA1.2V @ 100mAFast Recovery =< 500ns, > 200mA (Io)5ns500nA @ 75V5pF @ 0V, 1MHzThrough HoleD, Axial
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-65°C ~ 175°C
1N6857-1
 Microsemi Corporation SCHOTTKY RECTIFIER Active
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JANTX1N5551
 Microsemi Corporation DIODE GEN PURP 400V 5A AXIAL ActiveStandard400V5A1.2V @ 9AStandard Recovery >500ns, > 200mA (Io)2µs1µA @ 400V
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Through HoleB, Axial
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-65°C ~ 175°C
JAN1N6642US
 Microsemi Corporation DIODE GEN PURP 75V 300MA D5D ActiveStandard75V300mA1.2V @ 100mAFast Recovery =< 500ns, > 200mA (Io)5ns500nA @ 75V40pF @ 0V, 1MHzSurface MountSQ-MELF, DD-5D-65°C ~ 175°C
JAN1N6638US
 Microsemi Corporation DIODE GEN PURP 150V 300MA D-MELF ActiveStandard150V300mA1.1V @ 200mAFast Recovery =< 500ns, > 200mA (Io)20ns500nA @ 150V2.5pF @ 0V, 1MHzSurface MountDO-213AB, MELFB, SQ-MELF-65°C ~ 175°C
1N6641US
 Microsemi Corporation DIODE GEN PURPOSE Active
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1N6639US
 Microsemi Corporation DIODE GEN PURPOSE Active
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JANTXV1N3600
 Microsemi Corporation ZENER DIODE Active
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50V200mA1V @ 200mASmall Signal =< 200mA (Io), Any Speed4ns100nA @ 50V
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Through HoleDO-204AA, DO-7, AxialDO-7-65°C ~ 175°C
CDLL5712
 Microsemi Corporation DIODE SCHOTTKY 20V 75MA DO213AA ActiveSchottky20V75mA1V @ 35mASmall Signal =< 200mA (Io), Any Speed
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150nA @ 16V2pF @ 0V, 1MHzSurface MountDO-213AADO-213AA-65°C ~ 150°C
1N5711UR-1
 Microsemi Corporation SCHOTTKY DIODE Active
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1N5712UR-1
 Microsemi Corporation SCHOTTKY DIODE Active
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CDLL5194
 Microsemi Corporation DIODE GEN PURP 80V 200MA DO213AA ActiveStandard80V200mA1V @ 100mASmall Signal =< 200mA (Io), Any Speed
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100µA @ 80V
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Surface MountDO-213AADO-213AA-65°C ~ 175°C
CDLL5196
 Microsemi Corporation DIODE GEN PURP 250V 200MA DO213 ActiveStandard250V200mA1V @ 100mASmall Signal =< 200mA (Io), Any Speed
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100µA @ 250V
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Surface MountDO-213AADO-213AA-65°C ~ 175°C
1N5194UR
 Microsemi Corporation DIODE GEN PURP 70V 200MA DO213AA ActiveStandard70V200mA1V @ 100mASmall Signal =< 200mA (Io), Any Speed
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25nA @ 70V
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Surface MountDO-213AA (Glass)DO-213AA-65°C ~ 175°C
1N5195UR
 Microsemi Corporation DIODE GEN PURP 180V 200MA DO213 ActiveStandard180V200mA1V @ 100mASmall Signal =< 200mA (Io), Any Speed
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25nA @ 180V
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Surface MountDO-213AA (Glass)DO-213AA-65°C ~ 175°C
1N5196UR
 Microsemi Corporation DIODE GEN PURP 225V 200MA DO213 ActiveStandard225V200mA1V @ 100mASmall Signal =< 200mA (Io), Any Speed
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25nA @ 225V
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Surface MountDO-213AA (Glass)DO-213AA-65°C ~ 175°C
JAN1N5187
 Microsemi Corporation DIODE GEN PURP 200V 3A AXIAL ActiveStandard200V3A1.5V @ 9AFast Recovery =< 500ns, > 200mA (Io)200ns2µA @ 200V
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Through HoleB, AxialAxial-65°C ~ 175°C
JANTXV1N4245
 Microsemi Corporation DIODE GEN PURP 200V 1A AXIAL ActiveStandard200V1A1.3V @ 3AStandard Recovery >500ns, > 200mA (Io)5µs1µA @ 200V
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Through HoleA, Axial
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-65°C ~ 175°C
1N5186US
 Microsemi Corporation DIODE GEN PURP 100V 3A AXIAL ActiveStandard100V3A1.5V @ 9AFast Recovery =< 500ns, > 200mA (Io)150ns2µA @ 100V
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Through HoleB, Axial
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-65°C ~ 175°C
1N5187US
 Microsemi Corporation DIODE GEN PURP 200V 3A AXIAL ActiveStandard200V3A1.5V @ 9AFast Recovery =< 500ns, > 200mA (Io)200ns2µA @ 200V
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Through HoleB, Axial
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-65°C ~ 175°C
1N5188US
 Microsemi Corporation DIODE GEN PURP 400V 3A AXIAL ActiveStandard400V3A1.5V @ 9AFast Recovery =< 500ns, > 200mA (Io)250ns2µA @ 400V
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Through HoleB, Axial
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-65°C ~ 175°C
1N5189US
 Microsemi Corporation DIODE GEN PURP 500V 3A D5B ActiveStandard500V3A1.5V @ 9AFast Recovery =< 500ns, > 200mA (Io)300ns2µA @ 500V
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Surface MountE-MELFD-5B-65°C ~ 175°C
JANTX1N5622
 Microsemi Corporation DIODE GEN PURP 1KV 1A AXIAL ActiveStandard1000V1A1.3V @ 3AStandard Recovery >500ns, > 200mA (Io)2µs500nA @ 1000V
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Through HoleA, Axial
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-65°C ~ 200°C
JAN1N3614
 Microsemi Corporation DIODE GEN PURP 800V 1A AXIAL ActiveStandard800V1A1.1V @ 1AStandard Recovery >500ns, > 200mA (Io)
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1µA @ 800V
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Through HoleA, Axial
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-65°C ~ 175°C
1N7048UR-1
 Microsemi Corporation SCHOTTKY RECTIFIER Active
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1N7049UR-1
 Microsemi Corporation SCHOTTKY RECTIFIER Active
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1N7050UR-1
 Microsemi Corporation SCHOTTKY RECTIFIER Active
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1N7051UR-1
 Microsemi Corporation SCHOTTKY RECTIFIER Active
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1N7052UR-1
 Microsemi Corporation SCHOTTKY RECTIFIER Active
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1N7053UR-1
 Microsemi Corporation SCHOTTKY RECTIFIER Active
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1N7054UR-1
 Microsemi Corporation SCHOTTKY RECTIFIER Active
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1N7055UR-1
 Microsemi Corporation SCHOTTKY RECTIFIER Active
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JAN1N5614US
 Microsemi Corporation DIODE GEN PURP 200V 1A D5A ActiveStandard200V1A1.3V @ 3AStandard Recovery >500ns, > 200mA (Io)2µs500nA @ 200V
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Surface MountSQ-MELF, AD-5A-65°C ~ 200°C
JAN1N5616US
 Microsemi Corporation DIODE GEN PURP 400V 1A D5A ActiveStandard400V1A1.3V @ 3AStandard Recovery >500ns, > 200mA (Io)2µs500nA @ 400V
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Surface MountSQ-MELF, AD-5A-65°C ~ 200°C
JANTX1N5819UR-1
 Microsemi Corporation SCHOTTKY ActiveSchottky45V1A490mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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50µA @ 45V70pF @ 5V, 1MHzSurface MountDO-213AB, MELF (Glass)DO-213AB (MELF, LL41)-65°C ~ 125°C
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