Número de pieza Fabricante / Marca Breve descripción Estado de la piezaTipo de diodoVoltaje - DC Reverse (Vr) (Max)Corriente - promedio rectificado (Io)Voltaje - Adelante (Vf) (Máx) @ SiVelocidadTiempo de recuperación inversa (trr)Current - Reverse Leakage @ VrCapacitancia @ Vr, FTipo de montajePaquete / cajaPaquete de dispositivo del proveedorTemperatura de funcionamiento - unión
Microsemi Corporation DIODE GEN PURP 1KV 1A AXIAL ActiveStandard1000V1A1.6V @ 3AFast Recovery =< 500ns, > 200mA (Io)500ns500nA @ 1000V15pF @ 12V, 1MHzThrough HoleA, Axial
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-65°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 400V 3A D5B ActiveStandard400V3A1.5V @ 9AFast Recovery =< 500ns, > 200mA (Io)150ns2µA @ 400V
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Surface MountSQ-MELF, BD-5B-65°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 220V 1.2A A-MELF ActiveStandard220V1.2A1.4V @ 1.2AFast Recovery =< 500ns, > 200mA (Io)30ns500nA @ 220V10pF @ 10V, 1MHzSurface MountSQ-MELF, AA-MELF-65°C ~ 150°C
Microsemi Corporation DIODE GP 125V 150MA DO213AA ActiveStandard, Reverse Polarity125V150mA920mV @ 100mASmall Signal =< 200mA (Io), Any Speed3µs2nA @ 125V
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Surface MountDO-213AADO-213AA-65°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 800V 5A AXIAL ActiveStandard800V5A1.3V @ 9AStandard Recovery >500ns, > 200mA (Io)2µs1µA @ 800V
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Through HoleB, Axial
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-65°C ~ 175°C
Microsemi Corporation DIODE RECT ULT FAST REC A-PKG Active
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Microsemi Corporation DIODE GEN PURP 1KV 250MA AXIAL ActiveStandard1000V250mA5V @ 250mAStandard Recovery >500ns, > 200mA (Io)
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100µA @ 1000V
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Through HoleS, AxialS, Axial-65°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 600V 1A D5A ActiveStandard600V1A1.6V @ 3AFast Recovery =< 500ns, > 200mA (Io)250ns500nA @ 600V25pF @ 12V, 1MHzSurface MountSQ-MELF, AD-5A-65°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 150V 3A B-MELF ActiveStandard150V3A875mV @ 4AFast Recovery =< 500ns, > 200mA (Io)30ns5µA @ 150V60pF @ 10V, 1MHzSurface MountSQ-MELF, BB, SQ-MELF-65°C ~ 175°C
Microsemi Corporation RECTIFIER Active
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Microsemi Corporation DIODE RECT ULT FAST REC A-PKG Active
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Microsemi Corporation DIODE GEN PURP 220V 1.2A AXIAL ActiveStandard220V1.2A1.4V @ 1.2AFast Recovery =< 500ns, > 200mA (Io)30ns500nA @ 220V
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Through HoleA, Axial
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-65°C ~ 150°C
Microsemi Corporation DIODE GEN PURP 1KV 1A AXIAL ActiveStandard1000V1A1.6V @ 3AFast Recovery =< 500ns, > 200mA (Io)500ns500nA @ 1000V15pF @ 12V, 1MHzThrough HoleA, Axial
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-65°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 200V 5A B-MELF ActiveStandard200V5A1.2V @ 9AStandard Recovery >500ns, > 200mA (Io)2µs1µA @ 200V
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Surface MountSQ-MELF, BB, SQ-MELF-65°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 600V 5A B-MELF ActiveStandard600V5A1.2V @ 9AStandard Recovery >500ns, > 200mA (Io)2µs1µA @ 600V
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Surface MountSQ-MELF, BB, SQ-MELF-65°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 900V 1.4A AXIAL ActiveStandard900V1.4A1.4V @ 1.4AFast Recovery =< 500ns, > 200mA (Io)50ns2µA @ 900V
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Through HoleE, Axial
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-65°C ~ 150°C
Microsemi Corporation DIODE RECT ULT FAST REC A-PKG Active
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Microsemi Corporation DIODE GEN PURP 1KV 1A D5A ActiveStandard1000V1A1.3V @ 3AStandard Recovery >500ns, > 200mA (Io)2µs500nA @ 1000V
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Surface MountSQ-MELF, AD-5A-65°C ~ 200°C
Microsemi Corporation DIODE GEN PURP 200V 3A D5B ActiveStandard200V3A1.5V @ 9AFast Recovery =< 500ns, > 200mA (Io)150ns1µA @ 200V
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Surface MountSQ-MELF, BD-5B-65°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 100V 300MA D5D ActiveStandard100V300mA1.2V @ 100mAFast Recovery =< 500ns, > 200mA (Io)20ns500nA @ 100V
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Surface MountSQ-MELF, DD-5D-65°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 50V 300MA D-MELF ActiveStandard50V300mA1.1V @ 200mAFast Recovery =< 500ns, > 200mA (Io)5ns100nA @ 50V
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Surface MountSQ-MELF, DD-5D-65°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 600V 3A D5B ActiveStandard600V3A1.5V @ 9AFast Recovery =< 500ns, > 200mA (Io)400ns1µA @ 600V
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Surface MountSQ-MELF, BD-5B-65°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 1KV 15A DO203AA ActiveStandard1000V15A1.5V @ 15AStandard Recovery >500ns, > 200mA (Io)
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50µA @ 1000V
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Chassis, Stud MountDO-203AA, DO-4, StudDO-203AA-65°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 50V 3A D5A ActiveStandard50V3A2.04V @ 9.4AFast Recovery =< 500ns, > 200mA (Io)30ns1µA @ 50V
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Surface MountSQ-MELF, AD-5A-65°C ~ 155°C
Microsemi Corporation DIODE GEN PURP 100V 3A D5A ActiveStandard100V3A2.04V @ 9.4AFast Recovery =< 500ns, > 200mA (Io)30ns1µA @ 100V
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Surface MountSQ-MELF, AD-5A-65°C ~ 155°C
Microsemi Corporation DIODE GEN PURP 150V 3A D5A ActiveStandard150V3A2.04V @ 9.4AFast Recovery =< 500ns, > 200mA (Io)30ns1µA @ 150V
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Surface MountSQ-MELF, AD-5A-65°C ~ 155°C
Microsemi Corporation DIODE GEN PURP 800V 3A B-MELF ActiveStandard800V3A1.3V @ 9AStandard Recovery >500ns, > 200mA (Io)2µs1µA @ 800V
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Surface MountSQ-MELF, BD-5B-65°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 440V 2A D5A ActiveStandard75V200mA1.2V @ 100mASmall Signal =< 200mA (Io), Any Speed20ns500nA @ 75V2.8pF @ 1.5V, 1MHzSurface MountSQ-MELF, AD-5A-65°C ~ 200°C
Microsemi Corporation DIODE GEN PURP 880V 1A D5A ActiveStandard880V1A1.55V @ 1AFast Recovery =< 500ns, > 200mA (Io)50ns500nA @ 880V10pF @ 10V, 1MHzSurface MountSQ-MELF, AD-5A-65°C ~ 150°C
Microsemi Corporation DIODE GEN PURP 990V 1A D5A ActiveStandard990V1A1.55V @ 1AFast Recovery =< 500ns, > 200mA (Io)50ns500nA @ 990V10pF @ 10V, 1MHzSurface MountSQ-MELF, AD-5A-65°C ~ 150°C
Microsemi Corporation DIODE GEN PURP 1.1KV 1A D5A ActiveStandard1100V1A1.75V @ 1AFast Recovery =< 500ns, > 200mA (Io)60ns1µA @ 1100V10pF @ 10V, 1MHzSurface MountSQ-MELF, AD-5A-65°C ~ 150°C
Microsemi Corporation DIODE GEN PURP 900V 1.4A D5B ActiveStandard900V1.4A1.7V @ 3AFast Recovery =< 500ns, > 200mA (Io)50ns4µA @ 100V
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Surface MountE-MELFD-5B-65°C ~ 150°C
Microsemi Corporation DIODE GEN PURP 1.1KV 1.4A A-MELF ActiveStandard1100V1.4A1.4V @ 1.4AFast Recovery =< 500ns, > 200mA (Io)60ns4µA @ 1100V40pF @ 10V, 1MHzSurface MountSQ-MELF, AA-MELF-65°C ~ 150°C
Microsemi Corporation DIODE GEN PURP 100V 3A D5B ActiveStandard100V3A1.5V @ 9AFast Recovery =< 500ns, > 200mA (Io)150ns1µA @ 100V
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Surface MountSQ-MELF, BD-5B-65°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 125V 150MA ActiveStandard125V150mA920mV @ 100mASmall Signal =< 200mA (Io), Any Speed3µs2nA @ 125V
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Surface MountDO-213AA (Glass)DO-213AA-65°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 100V 3A AXIAL ActiveStandard100V3A2.04V @ 9.4AFast Recovery =< 500ns, > 200mA (Io)30ns1µA @ 100V
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Through HoleA, AxialA-PAK-65°C ~ 155°C
Microsemi Corporation DIODE GEN PURP 150V 3A AXIAL ActiveStandard150V3A2.04V @ 9.4AFast Recovery =< 500ns, > 200mA (Io)30ns1µA @ 150V
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Through HoleA, AxialA-PAK-65°C ~ 155°C
Microsemi Corporation DIODE RECT ULT FAST REC A-PKG Active
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Microsemi Corporation RECTIFIER DIODE Active
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Microsemi Corporation CURRENT REGULATOR DIODE Active
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Microsemi Corporation DIODE GEN PURP 400V 3A AXIAL ActiveStandard400V3A1.5V @ 9AStandard Recovery >500ns, > 200mA (Io)
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2µA @ 400V
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Through HoleB, AxialAxial-65°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 440V 2A D5A ActiveStandard440V2A1.4V @ 1.2AFast Recovery =< 500ns, > 200mA (Io)30ns500nA @ 440V10pF @ 10V, 1MHzSurface MountSQ-MELF, AD-5A-65°C ~ 150°C
Microsemi Corporation DIODE GEN PURP 660V 2A D5A ActiveStandard660V2A1.4V @ 1.2AFast Recovery =< 500ns, > 200mA (Io)30ns500nA @ 660V10pF @ 10V, 1MHzSurface MountSQ-MELF, AD-5A-65°C ~ 150°C
Microsemi Corporation DIODE GEN PURP 880V 1A D5A ActiveStandard880V1A1.55V @ 1AFast Recovery =< 500ns, > 200mA (Io)50ns500nA @ 880V10pF @ 10V, 1MHzSurface MountSQ-MELF, AD-5A-65°C ~ 150°C
Microsemi Corporation DIODE GEN PURP 1.1KV 1A D5A ActiveStandard1100V1A1.75V @ 1AFast Recovery =< 500ns, > 200mA (Io)60ns500nA @ 1100V10pF @ 10V, 1MHzSurface MountSQ-MELF, AD-5A-65°C ~ 150°C
Microsemi Corporation DIODE GEN PURP 800V 15A DO203AA ActiveStandard800V15A1.5V @ 15AFast Recovery =< 500ns, > 200mA (Io)
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50µA @ 800V
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Chassis, Stud MountDO-203AA, DO-4, StudDO-203AA (DO-4)-65°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 400V 1.2A A-MELF ActiveStandard400V1.2A1.4V @ 1.2AFast Recovery =< 500ns, > 200mA (Io)30ns500nA @ 400V
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Surface MountSQ-MELF, AD-5A-65°C ~ 150°C
Microsemi Corporation DIODE GEN PURP 600V 1.2A A-MELF ActiveStandard600V1.2A1.4V @ 1.2AFast Recovery =< 500ns, > 200mA (Io)30ns500nA @ 600V
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Surface MountSQ-MELF, AD-5A-65°C ~ 150°C
Microsemi Corporation CURRENT REGULATOR DIODE Active
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Microsemi Corporation CURRENT REGULATOR DIODE Active
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