Microsemi Distributor - Diodos - Rectificadores - Simple - 1N483B 1N5419 - CHIPSIC

Número de pieza	Fabricante / Marca	Breve descripción	Estado de la pieza	Tipo de diodo	Voltaje - DC Reverse (Vr) (Max)	Corriente - promedio rectificado (Io)	Voltaje - Adelante (Vf) (Máx) @ Si	Velocidad	Tiempo de recuperación inversa (trr)	Current - Reverse Leakage @ Vr	Capacitancia @ Vr, F	Tipo de montaje	Paquete / caja	Paquete de dispositivo del proveedor	Temperatura de funcionamiento - unión
1N483B	Microsemi Corporation	ZENER DIODE	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N5419	Microsemi Corporation	DIODE GEN PURP 500V 3A B-MELF	Active	Standard	500V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	1µA @ 500V	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
1N6638	Microsemi Corporation	DIODE GEN PURPOSE	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N5711	Microsemi Corporation	SCHOTTKY DIODE	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N5623	Microsemi Corporation	DIODE GEN PURP 1KV 1A AXIAL	Active	Standard	1000V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	500nA @ 1000V	15pF @ 12V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
JANTX1N5614	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL	Active	Standard	200V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 200V	-	Through Hole	A, Axial	-	-65°C ~ 200°C
CDLL1A50	Microsemi Corporation	DIODE SCHOTTKY 50V 1A DO213AB	Active	Schottky	50V	1A	600mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 50V	0.9pF @ 5V, 1MHz	Surface Mount	DO-213AB, MELF	DO-213AB	-
1N3595UR-1	Microsemi Corporation	DIODE GEN PURP 125V 150MA DO213	Active	Standard	125V	150mA (DC)	1V @ 200mA	Small Signal =< 200mA (Io), Any Speed	3µs	1nA @ 125V	-	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 175°C
JAN1N3612	Microsemi Corporation	DIODE GEN PURP 400V 1A AXIAL	Active	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 300V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
CDLL5817	Microsemi Corporation	DIODE SCHOTTKY 20V 1A DO213AB	Active	Schottky	20V	1A	600mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 20V	-	Surface Mount	DO-213AB, MELF	DO-213AB	-55°C ~ 125°C
APT60D120SG	Microsemi Corporation	DIODE GEN PURP 1.2KV 60A D3	Active	Standard	1200V	60A	2.5V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	400ns	250µA @ 1200V	-	Surface Mount	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	D3 [S]	-55°C ~ 175°C
CDLL6759	Microsemi Corporation	DIODE SCHOTTKY 60V 1A DO213AB	Active	Schottky	60V	1A	690mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	-	Surface Mount	DO-213AB, MELF	DO-213AB	-55°C ~ 125°C
JAN1N4248	Microsemi Corporation	DIODE GEN PURP 800V 1A AXIAL	Active	Standard	800V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	5µs	1µA @ 800V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
JAN1N5621	Microsemi Corporation	DIODE GEN PURP 800V 1A AXIAL	Active	Standard	800V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	500nA @ 800V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
1N7048-1	Microsemi Corporation	SCHOTTKY RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N7049-1	Microsemi Corporation	SCHOTTKY RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N7050-1	Microsemi Corporation	SCHOTTKY RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N7051-1	Microsemi Corporation	SCHOTTKY RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N7052-1	Microsemi Corporation	SCHOTTKY RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N7053-1	Microsemi Corporation	SCHOTTKY RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N7054-1	Microsemi Corporation	SCHOTTKY RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N7055-1	Microsemi Corporation	SCHOTTKY RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N5623US	Microsemi Corporation	DIODE GEN PURP 1KV 1A D5A	Active	Standard	1000V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	500nA @ 1000V	15pF @ 12V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
JAN1N6638	Microsemi Corporation	DIODE GEN PURP 150V 300MA AXIAL	Active	Standard	150V	300mA	1.1V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	20ns	500nA @ 150V	2.5pF @ 0V, 1MHz	Through Hole	D, Axial	-	-65°C ~ 175°C
1N6661	Microsemi Corporation	RECTIFIER DIODE	Active	-	-	-	-	-	-	-	-	-	-	-	-
JAN1N3957	Microsemi Corporation	DIODE GEN PURP 1KV 1A AXIAL	Active	Standard	1000V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 300V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
JAN1N4944	Microsemi Corporation	DIODE GEN PURP 400V 1A AXIAL	Active	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 400V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
JANTX1N3612	Microsemi Corporation	DIODE GEN PURP 400V 1A AXIAL	Active	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 400V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
JANTX1N3613	Microsemi Corporation	DIODE GEN PURP 600V 1A AXIAL	Active	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 600V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
1N6640	Microsemi Corporation	DIODE GEN PURPOSE	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N6642	Microsemi Corporation	DIODE GEN PURPOSE	Active	-	-	-	-	-	-	-	-	-	-	-	-
JAN1N5618	Microsemi Corporation	DIODE GEN PURP 600V 1A AXIAL	Active	Standard	600V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 600V	-	Through Hole	A, Axial	-	-65°C ~ 200°C
JAN1N5620	Microsemi Corporation	DIODE GEN PURP 800V 1A AXIAL	Active	Standard	800V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 800V	-	Through Hole	A, Axial	-	-65°C ~ 200°C
JAN1N5552	Microsemi Corporation	DIODE GEN PURP 600V 3A AXIAL	Active	Standard	600V	3A	1.2V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 600V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
APT100DL60BG	Microsemi Corporation	DIODE GEN PURP 600V 100A TO247	Active	Standard	600V	100A	1.6V @ 100A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Through Hole	TO-247-2	TO-247	-55°C ~ 175°C
1N5186	Microsemi Corporation	DIODE GEN PURP 100V 3A AXIAL	Active	Standard	100V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	2µA @ 100V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
1N5187	Microsemi Corporation	DIODE GEN PURP 200V 3A AXIAL	Active	Standard	200V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	2µA @ 200V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
1N5189	Microsemi Corporation	DIODE GEN PURP 500V 3A AXIAL	Active	Standard	500V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	2µA @ 500V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
1N5190	Microsemi Corporation	DIODE GEN PURP 600V 3A AXIAL	Active	Standard	600V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	400ns	2µA @ 600V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
1N6641	Microsemi Corporation	DIODE GEN PURPOSE	Active	-	-	-	-	-	-	-	-	-	-	-	-
JAN1N6643	Microsemi Corporation	DIODE GEN PURP 50V 300MA AXIAL	Active	Standard	50V	300mA	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	6ns	500nA @ 75V	5pF @ 0V, 1MHz	Through Hole	D, Axial	-	-65°C ~ 175°C
JANTX1N5618	Microsemi Corporation	DIODE GEN PURP 600V 1A AXIAL	Active	Standard	600V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 600V	-	Through Hole	A, Axial	-	-65°C ~ 200°C
JANTX1N5620	Microsemi Corporation	DIODE GEN PURP 800V 1A AXIAL	Active	Standard	800V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 800V	-	Through Hole	A, Axial	-	-65°C ~ 200°C
JANTX1N4247	Microsemi Corporation	DIODE GEN PURP 600V 1A AXIAL	Active	Standard	600V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	5µs	1µA @ 600V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
1N5819-1	Microsemi Corporation	DIODE SCHOTTKY 45V 1A DO204AL	Active	Schottky	45V	1A	340mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 45V	70pF @ 5V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 125°C
JAN1N5619	Microsemi Corporation	DIODE GEN PURP 600V 1A AXIAL	Active	Standard	600V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	500nA @ 800V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
1N5620US	Microsemi Corporation	DIODE GEN PURP 800V 1A D5A	Active	Standard	800V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 800V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 200°C
JANTX1N5417	Microsemi Corporation	DIODE GEN PURP 200V 3A AXIAL	Active	Standard	200V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 200V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
1N6858-1	Microsemi Corporation	SCHOTTKY RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N5194	Microsemi Corporation	DIODE GEN PURP 70V 200MA DO35	Active	Standard	70V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	25nA @ 70V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C

Fabricantes de Diodos - Rectificadores - Simple

Fabricantes de Diodos - Rectificadores - Simple