Taiwan Semiconductor Distributor - Diodes - Rectifiers - Single - SRA840 C0G MUR460 B0G - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SRA840 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 8A TO220AC	Active	Schottky	40V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 125°C
MUR460 B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 4A DO201AD	Active	Standard	600V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
SF1005G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 10A TO220AB	Active	Standard	300V	10A	1.3V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	50pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF1007G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 10A TO220AB	Active	Standard	500V	10A	1.7V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	50pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF1008G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 10A TO220AB	Active	Standard	600V	10A	1.7V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	50pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
MUR420HR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 4A DO201AD	Active	Standard	200V	4A	890mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
MUR440HR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 4A DO201AD	Active	Standard	400V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
MUR4L20HR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 4A DO201AD	Active	Standard	200V	4A	890mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
MUR4L40HR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 4A DO201AD	Active	Standard	400V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
MUR4L60HR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 4A DO201AD	Active	Standard	600V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
GPAS1001 MNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 10A TO263AB	Active	Standard	50V	10A	1.1V @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	50pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
GPAS1002 MNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 10A TO263AB	Active	Standard	100V	10A	1.1V @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	50pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
GPAS1003 MNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 10A TO263AB	Active	Standard	200V	10A	1.1V @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	50pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
GPAS1004 MNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 10A TO263AB	Active	Standard	400V	10A	1.1V @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	50pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
GPAS1005 MNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 10A TO263AB	Active	Standard	600V	10A	1.1V @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	50pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
GPAS1006 MNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 10A TO263AB	Active	Standard	800V	10A	1.1V @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	50pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
GPAS1007 MNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 10A TO263AB	Active	Standard	-	10A	1.1V @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	50pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
MUR420HA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 4A DO201AD	Active	Standard	200V	4A	890mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
MUR440HA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 4A DO201AD	Active	Standard	400V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
MUR4L20HA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 4A DO201AD	Active	Standard	200V	4A	890mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
MUR4L40HA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 4A DO201AD	Active	Standard	400V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
MUR4L60HA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 4A DO201AD	Active	Standard	600V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
SRAF520 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 5A ITO220AC	Active	Schottky	20V	5A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 125°C
SRAF530 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 5A ITO220AC	Active	Schottky	30V	5A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 125°C
SRAF540 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 5A ITO220AC	Active	Schottky	40V	5A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 125°C
MUR420HB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 4A DO201AD	Active	Standard	200V	4A	890mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
MUR440HB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 4A DO201AD	Active	Standard	400V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
MUR4L20HB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 4A DO201AD	Active	Standard	200V	4A	890mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
MUR4L40HB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 4A DO201AD	Active	Standard	400V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
MUR4L60HB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 4A DO201AD	Active	Standard	600V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
MBRF1035 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 35V 10A ITO220AC	Active	Schottky	35V	10A	700mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 35V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
MUR8L60HC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 8A TO220AC	Active	Standard	600V	8A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	65ns	5µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
SF1001GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 10A TO220AB	Active	Standard	50V	10A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	70pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF1002GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 10A TO220AB	Active	Standard	100V	10A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	70pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF1003GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 10A TO220AB	Active	Standard	150V	10A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	70pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF1004GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 10A TO220AB	Active	Standard	200V	10A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	70pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SRAF550 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 5A ITO220AC	Active	Schottky	50V	5A	700mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SRAF560 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 5A ITO220AC	Active	Schottky	60V	5A	700mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SFF501G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 5A ITO220AB	Active	Standard	50V	5A	980mV @ 2.5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	70pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SFF502G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 5A ITO220AB	Active	Standard	100V	5A	980mV @ 2.5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	70pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
MBR10100 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 10A TO220AC	Active	Schottky	100V	10A	850mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
MBR1035 C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 35V 10A TO220AC	Active	Standard	35V	10A	700mV @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 35V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
MBR1045 C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 45V 10A TO220AC	Active	Standard	45V	10A	700mV @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 45V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
MBR1050 C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 10A TO220AC	Active	Standard	50V	10A	800mV @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 50V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
MBR1090 C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 90V 10A TO220AC	Active	Standard	90V	10A	850mV @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
MBR7100 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 7.5A TO220AC	Active	Schottky	100V	7.5A	920mV @ 7.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
MBRF1050 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 10A ITO220AC	Active	Schottky	50V	10A	800mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 50V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
MBRF1060 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 10A ITO220AC	Active	Schottky	60V	10A	800mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
MBRF1090 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 10A ITO220AC	Active	Schottky	90V	10A	850mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
MBRF5100 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 5A ITO220AC	Active	Schottky	100V	5A	900mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C

Manufacturers for Diodes - Rectifiers - Single