Manufacturer Part NumberTK3A60DA(STA4,Q,M)
Manufacturer / BrandToshiba Semiconductor and Storage
Available Quantity87910 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionMOSFET N-CH 600V 2.5A TO-220SIS
Product CategoryTransistors - FETs, MOSFETs - Single
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download TK3A60DA(STA4,Q,M).pdf

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Part Number
TK3A60DA(STA4,Q,M)
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600V
Current - Continuous Drain (Id) @ 25°C
2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.8 Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id
4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
9nC @ 10V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
380pF @ 25V
FET Feature
-
Power Dissipation (Max)
30W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220SIS
Package / Case
TO-220-3 Full Pack
Weight
Contact us
Application
Email for details
Replacement Part
TK3A60DA(STA4,Q,M)

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Part Number Manufacturer Description
TK3A60DA(Q,M) Toshiba Semiconductor and Storage MOSFET N-CH 600V 2.5A TO-220SIS
TK3A60DA(STA4,Q,M) Toshiba Semiconductor and Storage MOSFET N-CH 600V 2.5A TO-220SIS