GT10J312(Q) Toshiba Semiconductor and Storage Distributor
| Manufacturer Part Number | GT10J312(Q) |
|---|---|
| Manufacturer / Brand | Toshiba Semiconductor and Storage |
| Available Quantity | 170230 Pieces |
| Unit Price | Quote by Email ([email protected]) |
| Brife Description | IGBT 600V 10A 60W TO220SM |
| Product Category | Transistors - IGBTs - Single |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Delivery Time | 1-2 Days |
| Date Code (D/C) | New |
| Datasheet Download | GT10J312(Q).pdf |
Please fill the below inquiry form, we will reply you the quotation for GT10J312(Q) within 24 hours.
- Part Number
- GT10J312(Q)
- Production Status (Lifecycle)
- Contact us
- Manufacturer Lead time
- 6-8 weeks
- Condition
- New & Unused, Original Sealed
- Shipping way
- DHL / FEDEX / UPS / TNT / EMS / Normal Post
- Part Status
- Obsolete
- IGBT Type
-
- Voltage - Collector Emitter Breakdown (Max)
- 600V
- Current - Collector (Ic) (Max)
- 10A
- Current - Collector Pulsed (Icm)
- 20A
- Vce(on) (Max) @ Vge, Ic
- 2.7V @ 15V, 10A
- Power - Max
- 60W
- Switching Energy
-
- Input Type
- Standard
- Gate Charge
-
- Td (on/off) @ 25°C
- 400ns/400ns
- Test Condition
- 300V, 10A, 100 Ohm, 15V
- Reverse Recovery Time (trr)
- 200ns
- Operating Temperature
- 150°C (TJ)
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package
- TO-220SM
- Weight
- Contact us
- Application
- Email for details
- Replacement Part
- GT10J312(Q)
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