Manufacturer Part NumberEDB1316BDBH-1DAAT-F-R TR
Manufacturer / BrandMicron Technology Inc.
Available Quantity71400 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionIC DRAM 1G PARALLEL 134VFBGA
Product CategoryMemory
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download EDB1316BDBH-1DAAT-F-R TR.pdf

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Part Number
EDB1316BDBH-1DAAT-F-R TR
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Active
Memory Type
Volatile
Memory Format
DRAM
Technology
SDRAM - Mobile LPDDR2
Memory Size
1Gb (64M x 16)
Clock Frequency
533MHz
Write Cycle Time - Word, Page
-
Access Time
-
Memory Interface
Parallel
Voltage - Supply
1.14 V ~ 1.95 V
Operating Temperature
-40°C ~ 105°C (TC)
Mounting Type
Surface Mount
Package / Case
134-VFBGA
Supplier Device Package
134-VFBGA (10x11.5)
Weight
Contact us
Application
Email for details
Replacement Part
EDB1316BDBH-1DAAT-F-R TR

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EDB1316BDBH-1DAAT-F-D Micron Technology Inc. IC DRAM 1G PARALLEL 134VFBGA
EDB1316BDBH-1DAAT-F-R TR Micron Technology Inc. IC DRAM 1G PARALLEL 134VFBGA
EDB1316BDBH-1DAUT-F-D Micron Technology Inc. IC DRAM 1G PARALLEL 134VFBGA
EDB1316BDBH-1DAUT-F-R TR Micron Technology Inc. IC DRAM 1G PARALLEL 134VFBGA
EDB1316BDBH-1DIT-F-D Micron Technology Inc. IC DRAM 1G PARALLEL 134VFBGA
EDB1316BDBH-1DIT-F-R TR Micron Technology Inc. IC DRAM 1G PARALLEL 134VFBGA