|
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 47A 8-SOP |
Active | N-Channel | MOSFET (Metal Oxide) | 30V | 47A (Tc) | 4.5V, 10V | 3.2 mOhm @ 23.5A, 10V | 2.3V @ 300µA | 21nC @ 10V | ±20V | 2100pF @ 15V | - | 1.6W (Ta), 44W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
|
Toshiba Semiconductor and Storage |
MOSFET N CH 60V 22A 8-SOP ADV |
Active | N-Channel | MOSFET (Metal Oxide) | 60V | 22A (Ta) | 10V | 7.5 mOhm @ 11A, 10V | 4V @ 300µA | 31nC @ 10V | ±20V | 2320pF @ 30V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 9.3A DPAK |
Active | N-Channel | MOSFET (Metal Oxide) | 650V | 9.3A (Ta) | 10V | 560 mOhm @ 4.6A, 10V | 3.5V @ 350µA | 20nC @ 10V | ±30V | 700pF @ 300V | - | 80W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 11.1A DPAK-0S |
Active | N-Channel | MOSFET (Metal Oxide) | 650V | 11.1A (Ta) | 10V | 440 mOhm @ 5.5A, 10V | 3.5V @ 450µA | 25nC @ 10V | ±30V | 890pF @ 300V | - | 100W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
Toshiba Semiconductor and Storage |
MOSFET N CH 60V 32A 8-SOP ADV |
Active | N-Channel | MOSFET (Metal Oxide) | 60V | 32A (Ta) | 6.5V, 10V | 4.6 mOhm @ 16A, 10V | 4V @ 500µA | 49nC @ 10V | ±20V | 3965pF @ 30V | - | 1.6W (Ta), 63W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
|
Toshiba Semiconductor and Storage |
LOAD SWITCH CURRENT REDUCTION |
Active | N-Channel | MOSFET (Metal Oxide) | 60V | 400mA (Ta) | 4.5V, 10V | 1.5 Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | ±20V | 40pF @ 10V | - | 150mW (Ta) | 150°C | Surface Mount | USM | SC-70, SOT-323 |
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 100MA CST3C |
Active | N-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 3.6 Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 13.5pF @ 3V | - | 500mW (Ta) | 150°C | Surface Mount | CST3C | SC-101, SOT-883 |
|
Toshiba Semiconductor and Storage |
X34 SMALL LOW ON RESISTANCE PCH |
Active | P-Channel | MOSFET (Metal Oxide) | 20V | 250mA (Ta) | 1.2V, 4.5V | 1.4 Ohm @ 150mA, 4.5V | 1V @ 100µA | - | ±10V | 42pF @ 10V | - | 150mW (Ta) | 150°C | Surface Mount | VESM | SOT-723 |
|
Toshiba Semiconductor and Storage |
X34 SMALL LOW ON RESISTANCE NCH |
Active | N-Channel | MOSFET (Metal Oxide) | 20V | 200mA (Ta) | 1.5V, 4.5V | 2.2 Ohm @ 100mA, 4.5V | 1V @ 1mA | - | ±10V | 12pF @ 10V | - | 500mW (Ta) | 150°C | Surface Mount | CST3C | SC-101, SOT-883 |
|
Toshiba Semiconductor and Storage |
X34 PB-F CST3 FET LF TRANSISTO |
Active | N-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.5V, 4V | 3 Ohm @ 10mA, 4V | 1.1V @ 100µA | - | ±10V | 9.3pF @ 3V | - | 100mW (Ta) | 150°C | Surface Mount | CST3 | SC-101, SOT-883 |
|
Toshiba Semiconductor and Storage |
X34 PB-F SMALL LOW ON RESISTANCE |
Active | N-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 4 Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 8.5pF @ 3V | - | 150mW (Ta) | 150°C | Surface Mount | SSM | SC-75, SOT-416 |
|
Toshiba Semiconductor and Storage |
X34 SMALL LOW ON RESISTANCE PCH |
Active | P-Channel | MOSFET (Metal Oxide) | 20V | 2A (Ta) | 1.8V, 10V | 110 mOhm @ 2A, 10V | 1.2V @ 1mA | 5.1nC @ 4.5V | ±12V | 210pF @ 10V | - | 1.2W (Ta) | 150°C | Surface Mount | S-Mini | TO-236-3, SC-59, SOT-23-3 |
|
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 6A 6-TSOP-F |
Active | P-Channel | MOSFET (Metal Oxide) | 20V | 6A (Ta) | 1.5V, 4.5V | 32.5 mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8nC @ 4.5V | +6V, -8V | 840pF @ 10V | - | 1.5W (Ta) | 150°C (TJ) | Surface Mount | 6-TSOP-F | 6-SMD, Flat Leads |
|
Toshiba Semiconductor and Storage |
MOSFET P-CHANNEL 30V 2A UFM |
Active | P-Channel | MOSFET (Metal Oxide) | 30V | 2A (Ta) | 4V, 10V | 117 mOhm @ 1A, 10V | 2.6V @ 1mA | - | ±20V | 280pF @ 15V | - | 500mW (Ta) | 150°C | Surface Mount | UFM | 3-SMD, Flat Leads |
|
Toshiba Semiconductor and Storage |
X34 SMALL LOW ON RESISTANCE NCH |
Active | N-Channel | MOSFET (Metal Oxide) | 38V | 2A (Ta) | 4V, 10V | 340 mOhm @ 1A, 10V | 2.4V @ 1mA | 2.5nC @ 10V | ±20V | 86pF @ 10V | - | 2W (Ta) | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
|
Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 400MA S-MINI |
Active | P-Channel | MOSFET (Metal Oxide) | 60V | 400mA (Ta) | 4V, 10V | 1.9 Ohm @ 100mA, 4.5V | 2V @ 1mA | 3nC @ 10V | +20V, -16V | 82pF @ 10V | - | 1.2W (Ta) | 150°C | Surface Mount | S-Mini | TO-236-3, SC-59, SOT-23-3 |
|
Toshiba Semiconductor and Storage |
X34 SMALL LOW ON RESISTANCE PCH |
Active | P-Channel | MOSFET (Metal Oxide) | 30V | 3.6A (Ta) | 1.8V, 10V | 50 mOhm @ 3A, 10V | 1.2V @ 1mA | 7.9nC @ 4.5V | ±12V | 560pF @ 15V | - | 500mW (Ta) | 150°C | Surface Mount | ES6 | SOT-563, SOT-666 |
|
Toshiba Semiconductor and Storage |
X34 SMALL LOW ON RESISTANCE MOSF |
Active | N-Channel | MOSFET (Metal Oxide) | 60V | 650mA (Ta) | 3V, 5V | 1.8 Ohm @ 150mA, 5V | 2V @ 1mA | 1.5nC @ 5V | ±12V | 60pF @ 12V | - | 1W (Ta) | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
|
Toshiba Semiconductor and Storage |
X34 SMALL LOW ON RESISTANCE NCH |
Active | N-Channel | MOSFET (Metal Oxide) | 20V | 800mA (Ta) | 1.2V, 4.5V | 57 mOhm @ 800mA, 4.5V | 1V @ 1mA | 2nC @ 4.5V | ±8V | 177pF @ 10V | - | 1W (Ta) | 150°C | Surface Mount | UFM | 3-SMD, Flat Leads |
|
Toshiba Semiconductor and Storage |
SMALL PCH LOW ON RESISTANCE MOSF |
Active | P-Channel | MOSFET (Metal Oxide) | 20V | 3.2A (Ta) | 1.5V, 4.5V | 93 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.7nC @ 4.5V | ±8V | 290pF @ 10V | - | 500mW (Ta) | 150°C | Surface Mount | UFM | 3-SMD, Flat Leads |
|
Toshiba Semiconductor and Storage |
MOSFET P-CHANNEL 12V 4.8A ES6 |
Active | P-Channel | MOSFET (Metal Oxide) | 12V | 4.8A (Ta) | 1.5V, 4.5V | 32 mOhm @ 3.5A, 4.5V | 1V @ 1mA | 12.7nC @ 4.5V | ±8V | 1040pF @ 12V | - | 700mW (Ta) | 150°C | Surface Mount | ES6 | SOT-563, SOT-666 |
|
Toshiba Semiconductor and Storage |
X34 SMALL LOW ON RESISTANCE NCH |
Active | N-Channel | MOSFET (Metal Oxide) | 60V | 2A (Ta) | 3.3V, 10V | 300 mOhm @ 1A, 10V | 2V @ 1mA | 6nC @ 10V | ±20V | 150pF @ 10V | - | 800mW (Ta) | 150°C | Surface Mount | UFM | 3-SMD, Flat Leads |
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 6A UFM |
Active | N-Channel | MOSFET (Metal Oxide) | 60V | 6A (Ta) | 4V, 10V | 36 mOhm @ 4A, 10V | 2.5V @ 100µA | 9.3nC @ 10V | ±20V | 550pF @ 10V | - | 1.8W (Ta) | 175°C | Surface Mount | UFM | 3-SMD, Flat Leads |
|
Toshiba Semiconductor and Storage |
X34 SMALL LOW ON RESISTANCE NCH |
Active | N-Channel | MOSFET (Metal Oxide) | 34V | 2A (Ta) | 4V, 10V | 240 mOhm @ 1A, 10V | 1.7V @ 1mA | 3nC @ 10V | ±20V | 119pF @ 10V | - | 800mW (Ta) | 150°C | Surface Mount | UFM | 3-SMD, Flat Leads |
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 3.5A 6-UDFNB |
Active | N-Channel | MOSFET (Metal Oxide) | 100V | 3.5A (Ta) | 4.5V, 10V | 69 mOhm @ 2A, 10V | 2.5V @ 100µA | 3.2nC @ 4.5V | ±20V | 430pF @ 15V | - | 2.5W (Ta) | 150°C | Surface Mount | 6-UDFNB (2x2) | 6-WDFN Exposed Pad |
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 6A 6-UDFNB |
Active | N-Channel | MOSFET (Metal Oxide) | 60V | 6A (Ta) | 4V, 10V | 36 mOhm @ 4A, 10V | 2.5V @ 100µA | 9.3nC @ 10V | ±20V | 550pF @ 10V | - | 2.5W (Ta) | 150°C | Surface Mount | 6-UDFNB (2x2) | 6-WDFN Exposed Pad |
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 3.5A UFM |
Active | N-Channel | MOSFET (Metal Oxide) | 100V | 3.5A (Ta) | 4.5V, 10V | 69 mOhm @ 2A, 10V | 2.5V @ 100µA | 3.2nC @ 4.5V | ±20V | 430pF @ 15V | - | 1.8W (Ta) | 175°C | Surface Mount | UFM | 3-SMD, Flat Leads |
|
Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
Active | N-Channel | MOSFET (Metal Oxide) | 30V | 88A (Tc) | 4.5V, 10V | 4.2 mOhm @ 44A, 4.5V | 2.1V @ 300µA | 50nC @ 10V | ±20V | 3825pF @ 15V | - | 90W (Tc) | 175°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
|
Toshiba Semiconductor and Storage |
MOSFET N-CHANNEL 600V 9.7A DPAK |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 9.7A (Tc) | 10V | 380 mOhm @ 4.9A, 10V | 4V @ 360µA | 20nC @ 10V | ±30V | 590pF @ 300V | - | 30W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
Toshiba Semiconductor and Storage |
MOSFET N-CHANNEL 650V 7A DPAK |
Active | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 560 mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5nC @ 10V | ±30V | 380pF @ 300V | - | 60W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
Toshiba Semiconductor and Storage |
MOSFET N-CHANNEL 40V 58A DPAK |
Active | N-Channel | MOSFET (Metal Oxide) | 40V | 58A (Tc) | 4.5V, 10V | 3.1 mOhm @ 29A, 10V | 2.4V @ 500µA | 60nC @ 10V | ±20V | 4670pF @ 20V | - | 87W (Tc) | 175°C | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
Toshiba Semiconductor and Storage |
MOSFET N-CHANNEL 60V 58A DPAK |
Active | N-Channel | MOSFET (Metal Oxide) | 60V | 58A (Tc) | 4.5V, 10V | 4.4 mOhm @ 29A, 10V | 2.5V @ 500µA | 48.2nC @ 10V | ±20V | 3280pF @ 30V | - | 87W (Tc) | 175°C | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
Active | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 4.5V, 10V | 7.2 mOhm @ 15A, 4.5V | 2.5V @ 500µA | 48.2nC @ 10V | ±20V | 3280pF @ 30V | - | 87W (Tc) | 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 800V 9.5A TO220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 800V | 9.5A (Ta) | 10V | 550 mOhm @ 4.8A, 10V | 4V @ 450µA | 19nC @ 10V | ±20V | 1150pF @ 300V | - | 40W (Tc) | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 800V 11.5A TO220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 800V | 11.5A (Ta) | 10V | 450 mOhm @ 5.8A, 10V | 4V @ 570µA | 23nC @ 10V | ±20V | 1400pF @ 300V | - | 45W (Tc) | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 800V 11.5A TO220 |
Active | N-Channel | MOSFET (Metal Oxide) | 800V | 11.5A (Ta) | 10V | 450 mOhm @ 5.8A, 10V | 4V @ 570µA | 23nC @ 10V | ±20V | 1400pF @ 300V | - | 165W (Tc) | 150°C | Through Hole | TO-220 | TO-220-3 |
|
Toshiba Semiconductor and Storage |
MOSFET N-CHANNEL 800V 17A TO220 |
Active | N-Channel | MOSFET (Metal Oxide) | 800V | 17A (Ta) | 10V | 290 mOhm @ 8.5A, 10V | 4V @ 850µA | 32nC @ 10V | ±20V | 2050pF @ 300V | - | 180W (Tc) | 150°C | Through Hole | TO-220 | TO-220-3 |
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 50MA S-MINI |
Active | N-Channel | MOSFET (Metal Oxide) | 20V | 50mA (Ta) | 2.5V | 40 Ohm @ 10mA, 2.5V | 1.5V @ 100µA | - | 10V | 5.5pF @ 3V | - | 200mW (Ta) | 150°C (TJ) | Surface Mount | SC-59 | TO-236-3, SC-59, SOT-23-3 |
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 100MA ESV |
Active | N-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 4 Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 7.8pF @ 3V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | ESV | SOT-553 |
|
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 2.3A TSM |
Obsolete | P-Channel | MOSFET (Metal Oxide) | 20V | 2.3A (Ta) | 1.8V, 4V | 127 mOhm @ 1A, 4V | - | 6.1nC @ 4V | ±8V | 335pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
|
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 4A UFM |
Not For New Designs | P-Channel | MOSFET (Metal Oxide) | 20V | 4A (Ta) | 1.5V, 4V | 38 mOhm @ 3A, 4V | 1V @ 1mA | 22.3nC @ 4V | ±8V | 1484pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | UFM | 3-SMD, Flat Leads |
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 0.4A SOT23 |
Active | N-Channel | MOSFET (Metal Oxide) | 60V | 400mA (Ta) | 4.5V, 10V | 1.5 Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | ±20V | 40pF @ 10V | - | 320mW (Ta) | 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
|
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 2A ES6 |
Active | P-Channel | MOSFET (Metal Oxide) | 20V | 2A (Ta) | 1.8V, 4V | 130 mOhm @ 1A, 4V | 1V @ 1mA | - | ±8V | 335pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | ES6 (1.6x1.6) | SOT-563, SOT-666 |
|
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 0.1A VESM |
Active | P-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | - | 8 Ohm @ 50mA, 4V | - | - | - | 12.2pF @ 3V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | VESM | SOT-723 |
|
Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 0.1A VESM |
Active | P-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 12 Ohm @ 10mA, 4V | 1.7V @ 100µA | - | ±20V | 9.1pF @ 3V | - | 150mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | VESM | SOT-723 |
|
Toshiba Semiconductor and Storage |
MOSFET N-CHANNEL 20V 250MA SSM |
Active | N-Channel | MOSFET (Metal Oxide) | 20V | 250mA (Ta) | 1.2V, 4.5V | 1.1 Ohm @ 150mA, 4.5V | 1V @ 100µA | 0.34nC @ 4.5V | ±10V | 36pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | SSM | SC-75, SOT-416 |
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 0.4A |
Active | N-Channel | MOSFET (Metal Oxide) | 60V | 400mA (Ta) | 4.5V, 10V | 1.5 Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | ±20V | 40pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | CST3 | SC-101, SOT-883 |
|
Toshiba Semiconductor and Storage |
MOSFET P-CHANNEL 20V 100MA CST3 |
Active | P-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.2V, 4V | 8 Ohm @ 50mA, 4V | 1V @ 1mA | - | ±10V | 12.2pF @ 3V | - | 100mW (Ta) | 150°C | Surface Mount | CST3 | SC-101, SOT-883 |
|
Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 0.1A CST3 |
Active | P-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 12 Ohm @ 10mA, 4V | - | - | ±20V | 9.1pF @ 3V | - | 100mW (Ta) | 150°C (TJ) | Surface Mount | CST3 | SC-101, SOT-883 |
|
Toshiba Semiconductor and Storage |
SMALL LOW ON RESISTANCE MOSFET |
Active | P-Channel | MOSFET (Metal Oxide) | 20V | 6A (Ta) | 1.8V, 4.5V | 30.1 mOhm @ 4A, 4.5V | 1V @ 1mA | 16.6nC @ 4.5V | ±10V | 1030pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |