|
IXYS |
MOSFET P-CH 500V 10A TO-263 |
Active | P-Channel | MOSFET (Metal Oxide) | 500V | 10A (Tc) | 10V | 1 Ohm @ 5A, 10V | 4V @ 250µA | 50nC @ 10V | ±20V | 2840pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
IXYS |
MOSFET P-CH 200V 26A TO-263 |
Active | P-Channel | MOSFET (Metal Oxide) | 200V | 26A (Tc) | 10V | 170 mOhm @ 13A, 10V | 4V @ 250µA | 56nC @ 10V | ±20V | 2740pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
STMicroelectronics |
MOSFET N-CH 900V 11A TO-247 |
Active | N-Channel | MOSFET (Metal Oxide) | 900V | 11A (Tc) | 10V | 880 mOhm @ 5.5A, 10V | 4.5V @ 100µA | 152nC @ 10V | ±30V | 3500pF @ 25V | - | 230W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
Infineon Technologies |
MOSFET N-CH 40V 240A D2PAK-7 |
Active | N-Channel | MOSFET (Metal Oxide) | 40V | 240A (Tc) | 10V | 0.75 mOhm @ 100A, 10V | 3.9V @ 250µA | 460nC @ 10V | ±20V | 13975pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab) |
|
ON Semiconductor |
MOSFET N-CH 150V TO-247-3 |
Active | N-Channel | MOSFET (Metal Oxide) | 150V | 158A (Tc) | 10V | 5.9 mOhm @ 120A, 10V | 4V @ 250µA | 92nC @ 10V | ±20V | 9445pF @ 75V | - | 429W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
|
STMicroelectronics |
MOSFET N-CH 600V 28A |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 28A (Tc) | 10V | 110 mOhm @ 14A, 10V | 5V @ 250µA | 54nC @ 10V | ±25V | 2400pF @ 100V | - | 210W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
|
STMicroelectronics |
MOSFET N-CH 200V 75A TO-220 |
Active | N-Channel | MOSFET (Metal Oxide) | 200V | 75A (Tc) | 10V | 34 mOhm @ 37A, 10V | 4V @ 250µA | 84nC @ 10V | ±20V | 3260pF @ 25V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 39A TO220F |
Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600V | 39A (Tc) | 10V | 99 mOhm @ 21A, 10V | 3.8V @ 250µA | 40nC @ 10V | ±30V | 2154pF @ 100V | - | 37.9W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
|
IXYS |
MOSFET P-CH 100V 52A TO-3P |
Active | P-Channel | MOSFET (Metal Oxide) | 100V | 52A (Tc) | 10V | 50 mOhm @ 500mA, 10V | 4.5V @ 250µA | 60nC @ 10V | ±20V | 2845pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
|
ON Semiconductor |
MOSFET N-CH 600V 22A TO-220 |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 22A (Tc) | 10V | 165 mOhm @ 11A, 10V | 4V @ 250µA | 45nC @ 10V | ±45V | 1950pF @ 100V | - | 205W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
IXYS |
MOSFET P-CH 50V 140A TO-220 |
Active | P-Channel | MOSFET (Metal Oxide) | 50V | 140A (Tc) | 10V | 9 mOhm @ 70A, 10V | 4V @ 250µA | 200nC @ 10V | ±15V | 13500pF @ 25V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
Infineon Technologies |
MOSFET N-CH 200V 94A TO-247AC |
Active | N-Channel | MOSFET (Metal Oxide) | 200V | 94A (Tc) | 10V | 23 mOhm @ 56A, 10V | 5V @ 250µA | 270nC @ 10V | ±30V | 6040pF @ 25V | - | 580W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
|
IXYS |
MOSFET N-CH 500V 26A TO-247 |
Active | N-Channel | MOSFET (Metal Oxide) | 500V | 26A (Tc) | 10V | 230 mOhm @ 13A, 10V | 5.5V @ 4mA | 60nC @ 10V | ±30V | 3600pF @ 25V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
|
Cree/Wolfspeed |
MOSFET N-CH 1200V 10A TO-247-3 |
Active | N-Channel | SiCFET (Silicon Carbide) | 1200V | 10A (Tc) | 20V | 370 mOhm @ 6A, 20V | 2.8V @ 1.25mA (Typ) | 20.4nC @ 20V | +25V, -10V | 259pF @ 1000V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
Infineon Technologies |
MOSFET N-CH 600V 37.9A TO220-FP |
Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600V | 37.9A (Tc) | 10V | 99 mOhm @ 18.1A, 10V | 3.5V @ 1.21mA | 119nC @ 10V | ±20V | 2660pF @ 100V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-FP | TO-220-3 Full Pack |
|
IXYS |
MOSFET N-CH 100V 200A TO-247 |
Active | N-Channel | MOSFET (Metal Oxide) | 100V | 200A (Tc) | 10V | 5.5 mOhm @ 50A, 10V | 4.5V @ 250µA | 152nC @ 10V | ±30V | 9400pF @ 25V | - | 550W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
|
Infineon Technologies |
MOSFET N-CH 200V 84A TO220 |
Active | N-Channel | MOSFET (Metal Oxide) | 200V | 84A (Tc) | 10V | 12 mOhm @ 84A, 10V | 4V @ 270µA | 87nC @ 10V | ±20V | 6650pF @ 100V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
|
Infineon Technologies |
MOSFET N-CH 200V 88A TO220-3 |
Active | N-Channel | MOSFET (Metal Oxide) | 200V | 88A (Tc) | 10V | 11 mOhm @ 88A, 10V | 4V @ 270µA | 87nC @ 10V | ±20V | 7100pF @ 100V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
|
Vishay Siliconix |
MOSFET N-CH 600V 33A TO-263 |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 33A (Tc) | 10V | 98 mOhm @ 16.5A, 10V | 4V @ 250µA | 155nC @ 10V | ±30V | 3454pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
STMicroelectronics |
MOSFET N-CH 600V 19.5A TO-220 |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 19.5A (Tc) | 10V | 180 mOhm @ 10A, 10V | 5V @ 250µA | 69nC @ 10V | ±25V | 2100pF @ 50V | - | 150W (Tc) | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
IXYS |
MOSFET N-CH 250V 80A TO263AA |
Active | N-Channel | MOSFET (Metal Oxide) | 250V | 80A (Tc) | 10V | 16 mOhm @ 40A, 10V | 4.5V @ 1.5mA | 83nC @ 10V | ±20V | 5430pF @ 25V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
STMicroelectronics |
MOSFET N-CH 600V 20A TO-220F |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 165 mOhm @ 10A, 10V | 4V @ 250µA | 60nC @ 10V | ±30V | 1800pF @ 50V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
|
ON Semiconductor |
MOSFET N-CH 600V 52A TO247 |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 52A (Tc) | 10V | 72 mOhm @ 26A, 10V | 5V @ 250µA | 215nC @ 10V | ±20V | 8660pF @ 100V | - | 481W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
|
Infineon Technologies |
MOSFET N-CH 75V 195A TO-247AC |
Active | N-Channel | MOSFET (Metal Oxide) | 75V | 195A (Tc) | 10V | 1.85 mOhm @ 195A, 10V | 4V @ 250µA | 570nC @ 10V | ±20V | 19230pF @ 50V | - | 520W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
|
STMicroelectronics |
MOSFET N-CH 650V 28A |
Active | N-Channel | MOSFET (Metal Oxide) | 650V | 28A (Tc) | 10V | 87 mOhm @ 19A, 10V | 5V @ 250µA | 70nC @ 10V | ±25V | 3200pF @ 100V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
|
STMicroelectronics |
MOSFET N-CH 900V 15A TO-247 |
Active | N-Channel | MOSFET (Metal Oxide) | 900V | 15A (Tc) | 10V | 550 mOhm @ 7.5A, 10V | 4.5V @ 150µA | 256nC @ 10V | ±30V | 6100pF @ 25V | - | 350W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
STMicroelectronics |
MOSFET N-CH 600V 21A TO-220 |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 160 mOhm @ 10.5A, 10V | 5V @ 250µA | 80nC @ 10V | ±25V | 2400pF @ 50V | - | 160W (Tc) | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
Infineon Technologies |
MOSFET N-CH 100V 195A TO-247AC |
Active | N-Channel | MOSFET (Metal Oxide) | 100V | 195A (Tc) | 10V | 2.6 mOhm @ 180A, 10V | 4V @ 250µA | 540nC @ 10V | ±20V | 19860pF @ 50V | - | 520W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
|
IXYS |
MOSFET N-CH 500V 60A TO247 |
Active | N-Channel | MOSFET (Metal Oxide) | 500V | 60A (Tc) | 10V | 100 mOhm @ 30A, 10V | 5V @ 4mA | 96nC @ 10V | ±30V | 6250pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
|
Cree/Wolfspeed |
MOSFET N-CH 900V 22A |
Active | N-Channel | SiCFET (Silicon Carbide) | 900V | 22A (Tc) | 15V | 155 mOhm @ 15A, 15V | 3.5V @ 3mA | 17.3nC @ 15V | +18V, -8V | 350pF @ 600V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
|
Infineon Technologies |
MOSFET N-CH 200V 88A TO220-3 |
Active | N-Channel | MOSFET (Metal Oxide) | 200V | 88A (Tc) | 10V | 10.7 mOhm @ 88A, 10V | 4V @ 270µA | 87nC @ 10V | ±20V | 7100pF @ 100V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
|
Vishay Siliconix |
MOSFET N-CH 600V 27A TO-247AC |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 27A (Tc) | 10V | 220 mOhm @ 16A, 10V | 5V @ 250µA | 180nC @ 10V | ±30V | 4660pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
IXYS |
MOSFET P-CH 500V 20A TO-247 |
Active | P-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 450 mOhm @ 10A, 10V | 4V @ 250µA | 103nC @ 10V | ±20V | 5120pF @ 25V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
|
IXYS |
MOSFET P-CH 100V 90A TO-247 |
Active | P-Channel | MOSFET (Metal Oxide) | 100V | 90A (Tc) | 10V | 25 mOhm @ 45A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 5800pF @ 25V | - | 462W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
|
STMicroelectronics |
MOSFET N-CH 600V 34A TO-3PF |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 34A (Tc) | 10V | 88 mOhm @ 17A, 10V | 4V @ 250µA | 57nC @ 10V | ±25V | 2500pF @ 100V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOWATT-218FX | ISOWATT218FX |
|
IXYS |
MOSFET N-CH 200V 16A TO-268 |
Active | N-Channel | MOSFET (Metal Oxide) | 200V | 16A (Tc) | - | 73 mOhm @ 8A, 0V | - | 208nC @ 5V | ±20V | 5500pF @ 25V | Depletion Mode | 695W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
|
Infineon Technologies |
MOSFET N-CH 100V 170A SUPER247 |
Active | N-Channel | MOSFET (Metal Oxide) | 100V | 170A (Tc) | 10V | 9 mOhm @ 100A, 10V | 5V @ 250µA | 390nC @ 10V | ±30V | 6790pF @ 25V | - | 580W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | SUPER-247 (TO-274AA) | TO-274AA |
|
Infineon Technologies |
MOSFET N-CH 650V 69A HSOF-8 |
Active | N-Channel | MOSFET (Metal Oxide) | 650V | 69A (Tc) | 10V | 33 mOhm @ 28.9A, 10V | 4V @ 1.44mA | 110nC @ 10V | ±20V | 5000pF @ 400V | - | 391W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-HSOF-8 | 8-PowerSFN |
|
IXYS |
MOSFET N-CH 200V 50A TO-247AD |
Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 200V | 50A (Tc) | 10V | 45 mOhm @ 25A, 10V | 4V @ 4mA | 220nC @ 10V | ±20V | 4400pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
|
STMicroelectronics |
MOSFET N-CH 600V 34A EP TO220FP |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 34A (Tc) | 10V | 87 mOhm @ 17A, 10V | 4.75V @ 250µA | 55nC @ 10V | ±25V | 2370pF @ 100V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
|
Microchip Technology |
MOSFET N-CH 60V 0.41A TO39-3 |
Active | N-Channel | MOSFET (Metal Oxide) | 60V | 410mA (Ta) | 5V, 10V | 3 Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50pF @ 24V | - | 6.25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AD, TO-39-3 Metal Can |
|
IXYS |
MOSFET N-CH 500V 26A TO-247AD |
Active | N-Channel | MOSFET (Metal Oxide) | 500V | 26A (Tc) | 10V | 200 mOhm @ 13A, 10V | 4V @ 4mA | 160nC @ 10V | ±20V | 4200pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
|
STMicroelectronics |
MOSFET N-CH 600V 50A |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 50A (Tc) | 10V | 60 mOhm @ 25A, 10V | 5V @ 250µA | 90nC @ 10V | ±25V | 4100pF @ 100V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
|
STMicroelectronics |
MOSFET N-CH 600V 66A |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 66A (Tc) | 10V | 42 mOhm @ 33A, 10V | 5V @ 250µA | 121nC @ 10V | ±25V | 5508pF @ 100V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 61.8A TO-247 |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 61.8A (Ta) | 10V | 40 mOhm @ 21A, 10V | 3.5V @ 3.1mA | 135nC @ 10V | ±30V | 6500pF @ 300V | Super Junction | 400W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
|
ON Semiconductor |
MOSFET N CH 600V 76A TO247 |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 76A (Tc) | 10V | 41 mOhm @ 38A, 10V | 5V @ 250µA | 360nC @ 10V | ±20V | 14365pF @ 100V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
|
STMicroelectronics |
MOSFET N-CH 600V 66A |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 66A (Tc) | 10V | 42 mOhm @ 33A, 10V | 5V @ 250µA | 121nC @ 10V | ±25V | 5508pF @ 100V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
|
IXYS |
MOSFET N-CH 150V 180A TO-264 |
Active | N-Channel | MOSFET (Metal Oxide) | 150V | 180A (Tc) | 10V | 10 mOhm @ 90A, 10V | 5V @ 500µA | 240nC @ 10V | ±20V | 7000pF @ 25V | - | 800W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
|
IXYS |
MOSFET N-CH 650V 80A TO-247 |
Active | N-Channel | MOSFET (Metal Oxide) | 650V | 80A (Tc) | 10V | 40 mOhm @ 40A, 10V | 5.5V @ 4mA | 143nC @ 10V | ±30V | 8245pF @ 25V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
|
Infineon Technologies |
MOSFET N-CH 600V 50A TO247-3 |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 50A (Tc) | 10V | 40 mOhm @ 24.9A, 10V | 4V @ 1.24mA | 107nC @ 10V | ±20V | 4340pF @ 400V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |