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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 7.5A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 500V | 7.5A (Ta) | 10V | 1.04 Ohm @ 3.8A, 10V | 4.4V @ 1mA | 16nC @ 10V | ±30V | 700pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 3A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 650V | 3A (Ta) | 10V | 2.25 Ohm @ 1.5A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 540pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 5A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 650V | 5A (Ta) | 10V | 1.43 Ohm @ 2.5A, 10V | 4V @ 1mA | 16nC @ 10V | ±30V | 800pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 35A TO-220AB |
Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 12A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Ta) | 10V | 550 mOhm @ 6A, 10V | 4V @ 1mA | 38nC @ 10V | ±30V | 1800pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 7.5A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 450V | 7.5A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
Active | N-Channel | MOSFET (Metal Oxide) | 100V | 160A (Ta) | 6V, 10V | 2.4 mOhm @ 80A, 10V | 3.5V @ 1mA | 122nC @ 10V | ±20V | 10100pF @ 10V | - | 375W (Tc) | 175°C | Surface Mount | TO-220SM(W) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 20A D2PAK |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 155 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | ±30V | 1680pF @ 300V | Super Junction | 165W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N CH 120V 56A TO-220 |
Active | N-Channel | MOSFET (Metal Oxide) | 120V | 56A (Ta) | 10V | 7 mOhm @ 28A, 10V | 4V @ 1mA | 69nC @ 10V | ±20V | 4200pF @ 60V | - | 168W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 9A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 450V | 9A (Ta) | 10V | 770 mOhm @ 4.5A, 10V | 4V @ 1mA | 16nC @ 10V | ±30V | 800pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 7.5A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 550V | 7.5A (Ta) | 10V | 1.07 Ohm @ 3.8A, 10V | 4V @ 1mA | 16nC @ 10V | ±30V | 800pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 7.5A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 7.5A (Ta) | 10V | 1 Ohm @ 4A, 10V | 4V @ 1mA | 20nC @ 10V | ±30V | 1050pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 11A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 450V | 11A (Ta) | 10V | 620 mOhm @ 5.5A, 10V | 4V @ 1mA | 20nC @ 10V | ±30V | 1050pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 10A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 500V | 10A (Ta) | 10V | 720 mOhm @ 5A, 10V | 4V @ 1mA | 20nC @ 10V | ±30V | 1050pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 40A TO-220AB |
Active | N-Channel | MOSFET (Metal Oxide) | 100V | 40A (Ta) | - | 15 mOhm @ 20A, 10V | 4V @ 1mA | 84nC @ 10V | - | 4000pF @ 10V | - | - | - | Through Hole | TO-220-3 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 15A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 500V | 15A (Ta) | 10V | 300 mOhm @ 7.5A, 10V | 4V @ 1mA | 40nC @ 10V | ±30V | 2300pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 8A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 100V | 8A (Ta) | 10V | 120 mOhm @ 4A, 10V | 4V @ 1mA | 12.9nC @ 10V | ±20V | 530pF @ 10V | - | 18W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 7A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Ta) | 10V | 600 mOhm @ 3.5A, 10V | 3.7V @ 350µA | 15nC @ 10V | ±30V | 490pF @ 300V | Super Junction | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 9.7A TO-220 |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 9.7A (Ta) | 10V | 380 mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | ±30V | 720pF @ 300V | - | 30W (Tc) | - | Through Hole | TO-220 | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 46A TO-220 |
Active | N-Channel | MOSFET (Metal Oxide) | 80V | 46A (Tc) | 10V | 8.4 mOhm @ 23A, 10V | 4V @ 500µA | 37nC @ 10V | ±20V | 2500pF @ 40V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 6.2A IPAK |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 6.2A (Ta) | 10V | 820 mOhm @ 3.1A, 10V | 3.7V @ 310µA | 12nC @ 10V | ±30V | 390pF @ 300V | Super Junction | 60W (Tc) | 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 9.7A 5DFN |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 9.7A (Ta) | 10V | 380 mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | ±30V | 700pF @ 300V | Super Junction | 88.3W (Tc) | 150°C (TJ) | Surface Mount | 4-DFN-EP (8x8) | 4-VSFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 8.5A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 550V | 8.5A (Ta) | 10V | 860 mOhm @ 4.3A, 10V | 4V @ 1mA | 20nC @ 10V | ±30V | 1050pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 9A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Ta) | 10V | 830 mOhm @ 4.5A, 10V | 4V @ 1mA | 24nC @ 10V | ±30V | 1200pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 7A IPAK-3 |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Ta) | 10V | 600 mOhm @ 3.5A, 10V | 3.7V @ 350µA | 15nC @ 10V | ±30V | 490pF @ 300V | - | 60W (Tc) | 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 11A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 500V | 11A (Ta) | 10V | 600 mOhm @ 5.5A, 10V | 4V @ 1mA | 24nC @ 10V | ±30V | 1200pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 7A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Ta) | 10V | 980 mOhm @ 3.5A, 10V | 4V @ 1mA | 24nC @ 10V | ±30V | 1200pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 12A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 450V | 12A (Ta) | 10V | 520 mOhm @ 6A, 10V | 4V @ 1mA | 24nC @ 10V | ±30V | 1200pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 900V 3A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 900V | 3A (Ta) | 10V | 4.3 Ohm @ 1.5A, 10V | 4V @ 1mA | 17nC @ 10V | ±30V | 700pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 6.2A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 6.2A (Ta) | 10V | 750 mOhm @ 3.1A, 10V | 3.7V @ 310µA | 12nC @ 10V | ±30V | 390pF @ 300V | Super Junction | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 13A TO-220AB |
Active | N-Channel | MOSFET (Metal Oxide) | 250V | 13A (Ta) | 10V | 250 mOhm @ 6.5A, 10V | 3.5V @ 1mA | 25nC @ 10V | ±20V | 1100pF @ 100V | - | 102W (Tc) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 10A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 550V | 10A (Ta) | 10V | 720 mOhm @ 5A, 10V | 4V @ 1mA | 24nC @ 10V | ±30V | 1200pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 75V 60A TO-220AB |
Active | N-Channel | MOSFET (Metal Oxide) | 75V | 60A | - | 9 mOhm @ 30A, 10V | - | 75nC @ 10V | - | - | - | 128W | - | Through Hole | TO-220-3 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 13A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 450V | 13A (Ta) | 10V | 460 mOhm @ 6.5A, 10V | 4V @ 1mA | 25nC @ 10V | ±30V | 1350pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 8A IPAK |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 8A (Ta) | 10V | 500 mOhm @ 4A, 10V | 3.7V @ 400µA | 18.5nC @ 10V | ±30V | 570pF @ 300V | Super Junction | 80W (Tc) | 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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Toshiba Semiconductor and Storage |
MOSFET N CH 120V 72A TO-220 |
Active | N-Channel | MOSFET (Metal Oxide) | 120V | 72A (Ta) | 10V | 4.4 mOhm @ 36A, 10V | 4V @ 1mA | 130nC @ 10V | ±20V | 8100pF @ 60V | - | 255W (Tc) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 525V 12A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 525V | 12A (Ta) | 10V | 580 mOhm @ 6A, 10V | 4V @ 1mA | 25nC @ 10V | ±30V | 1350pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 11A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 550V | 11A (Ta) | 10V | 630 mOhm @ 5.5A, 10V | 4V @ 1mA | 25nC @ 10V | ±30V | 1350pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 8A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 8A (Ta) | 10V | 500 mOhm @ 4A, 10V | 3.7V @ 400µA | 18.5nC @ 10V | ±30V | 570pF @ 300V | Super Junction | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 11A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Ta) | 10V | 650 mOhm @ 5.5A, 10V | 4V @ 1mA | 28nC @ 10V | ±30V | 1550pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Ta) | 10V | 135 mOhm @ 7.5A, 10V | 3.5V @ 1.2mA | 40nC @ 10V | ±30V | 2400pF @ 300V | - | 180W (Tc) | 150°C | Surface Mount | 4-DFN-EP (8x8) | 4-VSFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 12.5A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 500V | 12.5A (Ta) | 10V | 470 mOhm @ 6.3A, 10V | 4V @ 1mA | 28nC @ 10V | ±30V | 1550pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 13.5A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 450V | 13.5A | - | 410 mOhm @ 6.8A, 10V | - | - | - | - | - | - | - | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 15.8ADTMOSIV |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 15.8A (Ta) | 10V | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 40nC @ 10V | ±30V | 1350pF @ 300V | - | 40W (Tc) | - | Through Hole | TO-220 | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 12A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 550V | 12A (Ta) | 10V | 570 mOhm @ 6A, 10V | 4V @ 1mA | 28nC @ 10V | ±30V | 1550pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 12.5A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 550V | 12.5A (Ta) | 10V | 480 mOhm @ 6.3A, 10V | 4V @ 1mA | 38nC @ 10V | ±30V | 1800pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 13A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 500V | 13A (Ta) | 10V | 400 mOhm @ 6.5A, 10V | 4V @ 1mA | 38nC @ 10V | ±30V | 1800pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 14A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 450V | 14A | - | 340 mOhm @ 7A, 10V | - | - | - | - | - | - | - | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 14A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 550V | 14A (Ta) | 10V | 370 mOhm @ 7A, 10V | 4V @ 1mA | 40nC @ 10V | ±30V | 2300pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 11.5A TO-220 |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 11.5A (Ta) | 10V | 300 mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25nC @ 10V | ±30V | 890pF @ 300V | Super Junction | 110W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |