Manufacturer Part NumberIPG16N10S4L61AATMA1
Manufacturer / BrandInfineon Technologies
Available Quantity24070 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionMOSFET 2N-CH 8TDSON
Product CategoryTransistors - FETs, MOSFETs - Arrays
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download IPG16N10S4L61AATMA1.pdf

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Part Number
IPG16N10S4L61AATMA1
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Active
FET Type
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
16A
Rds On (Max) @ Id, Vgs
61 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
2.1V @ 90µA
Gate Charge (Qg) (Max) @ Vgs
11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
845pF @ 25V
Power - Max
29W
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Supplier Device Package
PG-TDSON-8-10
Weight
Contact us
Application
Email for details
Replacement Part
IPG16N10S4L61AATMA1

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IPG16N10S4L61AATMA1 Infineon Technologies MOSFET 2N-CH 8TDSON