Manufacturer Part NumberIPDD60R102G7XTMA1
Manufacturer / BrandInfineon Technologies
Available Quantity182510 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionMOSFET NCH 650V 66A PG-HDSOP-10
Product CategoryTransistors - FETs, MOSFETs - Single
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download IPDD60R102G7XTMA1.pdf

Please fill the below inquiry form, we will reply you the quotation for IPDD60R102G7XTMA1 within 24 hours.

Part Number
IPDD60R102G7XTMA1
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600V
Current - Continuous Drain (Id) @ 25°C
23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
102 mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id
4V @ 390µA
Gate Charge (Qg) (Max) @ Vgs
34nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1320pF @ 400V
FET Feature
-
Power Dissipation (Max)
139W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-HDSOP-10-1
Package / Case
10-PowerSOP Module
Weight
Contact us
Application
Email for details
Replacement Part
IPDD60R102G7XTMA1

Related Components made by Infineon Technologies

Related Keywords For "IPDD6"

Part Number Manufacturer Description
IPDD60R050G7XTMA1 Infineon Technologies MOSFET NCH 650V 135A PG-HDSOP-10
IPDD60R080G7XTMA1 Infineon Technologies MOSFET NCH 650V 83A PG-HDSOP-10
IPDD60R102G7XTMA1 Infineon Technologies MOSFET NCH 650V 66A PG-HDSOP-10
IPDD60R125G7XTMA1 Infineon Technologies MOSFET NCH 650V 54A PG-HDSOP-10
IPDD60R150G7XTMA1 Infineon Technologies MOSFET NCH 650V 45A PG-HDSOP-10
IPDD60R190G7XTMA1 Infineon Technologies MOSFET NCH 650V 36A PG-HDSOP-10