Manufacturer Part NumberIPD5N25S3430ATMA1
Manufacturer / BrandInfineon Technologies
Available Quantity33810 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionMOSFET N-CH TO252-3
Product CategoryTransistors - FETs, MOSFETs - Single
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download IPD5N25S3430ATMA1.pdf

Please fill the below inquiry form, we will reply you the quotation for IPD5N25S3430ATMA1 within 24 hours.

Part Number
IPD5N25S3430ATMA1
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250V
Current - Continuous Drain (Id) @ 25°C
5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
430 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
4V @ 13µA
Gate Charge (Qg) (Max) @ Vgs
6.2nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
422pF @ 25V
FET Feature
-
Power Dissipation (Max)
41W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3-313
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Weight
Contact us
Application
Email for details
Replacement Part
IPD5N25S3430ATMA1

Related Components made by Infineon Technologies

Related Keywords For "IPD5N"

Part Number Manufacturer Description
IPD5N03LAG Infineon Technologies MOSFET N-CH 25V 50A TO252-3-11
IPD5N25S3430ATMA1 Infineon Technologies MOSFET N-CH TO252-3