Manufacturer Part NumberDF200R12W1H3B27BOMA1
Manufacturer / BrandInfineon Technologies
Available Quantity139580 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionIGBT MODULE VCES 1200V 200A
Product CategoryTransistors - IGBTs - Modules
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download DF200R12W1H3B27BOMA1.pdf

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Part Number
DF200R12W1H3B27BOMA1
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Active
IGBT Type
-
Configuration
2 Independent
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
30A
Power - Max
375W
Vce(on) (Max) @ Vge, Ic
1.3V @ 15V, 30A
Current - Collector Cutoff (Max)
1mA
Input Capacitance (Cies) @ Vce
2nF @ 25V
Input
Standard
NTC Thermistor
Yes
Operating Temperature
-40°C ~ 150°C
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Weight
Contact us
Application
Email for details
Replacement Part
DF200R12W1H3B27BOMA1

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