Manufacturer Part NumberMB85R4M2TFN-G-ASE1
Manufacturer / BrandFujitsu Electronics America, Inc.
Available Quantity44510 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionIC FRAM 4M PARALLEL 44TSOP
Product CategoryMemory
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download MB85R4M2TFN-G-ASE1.pdf

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Part Number
MB85R4M2TFN-G-ASE1
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Active
Memory Type
Non-Volatile
Memory Format
FRAM
Technology
FRAM (Ferroelectric RAM)
Memory Size
4Mb (256K x 16)
Clock Frequency
-
Write Cycle Time - Word, Page
150ns
Access Time
150ns
Memory Interface
Parallel
Voltage - Supply
1.8 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C (TA)
Mounting Type
Surface Mount
Package / Case
44-TSOP (0.400", 10.16mm Width)
Supplier Device Package
44-TSOP
Weight
Contact us
Application
Email for details
Replacement Part
MB85R4M2TFN-G-ASE1

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MB85R4001ANC-GE1 Fujitsu Electronics America, Inc. IC FRAM 4M PARALLEL 48TSOP
MB85R4002ANC-GE1 Fujitsu Electronics America, Inc. IC FRAM 4M PARALLEL 48TSOP
MB85R4M2TFN-G-ASE1 Fujitsu Electronics America, Inc. IC FRAM 4M PARALLEL 44TSOP