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IXYS Integrated Circuits Division |
IC MOSFET DVR NONINV 1.5A 8-DFN |
Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 10ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN (3x3) |
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IXYS Integrated Circuits Division |
IC MOSFET DVR INV/NON 1.5A 8-DFN |
Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 10ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN (3x3) |
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IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8-SOIC |
Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL NONINV 8SOIC |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL ENABLE 8SOIC |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8-SOIC |
Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8-SOIC |
Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL ENABLE 8SOIC |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL IN/NON 8SOIC |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Inverting, Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL NONINV 8SOIC |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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IXYS Integrated Circuits Division |
IC GATE DRIVER LOW SIDE 5TO263 |
Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 12.5 V ~ 35 V | 0.8V, 3.5V | 30A, 30A | Non-Inverting | - | 11ns, 11ns | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-6, D²Pak (5 Leads + Tab), TO-263BA | TO-263-5 |
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IXYS Integrated Circuits Division |
IC GATE DRIVER LOW SIDE 5TO220 |
Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 12.5 V ~ 35 V | 0.8V, 3.5V | 30A, 30A | Non-Inverting | - | 11ns, 11ns | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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IXYS Integrated Circuits Division |
IC GATE DRIVER LOW SIDE 5TO263 |
Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 12.5 V ~ 35 V | 0.8V, 3.5V | 30A, 30A | Non-Inverting | - | 11ns, 11ns | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-6, D²Pak (5 Leads + Tab), TO-263BA | TO-263-5 |
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IXYS Integrated Circuits Division |
IC GATE DRIVER LOW SIDE TO-263-5 |
Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 9 V ~ 35 V | 0.8V, 3.5V | 30A, 30A | Non-Inverting | - | 11ns, 11ns | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-6, D²Pak (5 Leads + Tab), TO-263BA | TO-263-5 |
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IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8DFN |
Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) |
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IXYS Integrated Circuits Division |
IC MOSFET DRIVER 1.5A 8SOIC |
Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 10ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC MOSFET DRIVER 1.5A 8SOIC |
Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 10ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC MOSFET DRIVER 1.5A 8SOIC |
Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 10ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
5-AMP DUAL LOW-SIDE MOSFET DRIVE |
Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 5 V ~ 20 V | 0.8V, 2.5V | 5A, 5A | Non-Inverting | - | 7ns, 7ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC |
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IXYS Integrated Circuits Division |
DUAL LOW SIDE MOSFET DRIVER |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
MOSFET N-CH 2A DUAL LO SIDE 8-SO |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Inverting, Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
MOSFET N-CH 2A DUAL LO SIDE 8-SO |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8-DIP |
Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL NONINV 8DIP |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm), 6 Leads | 8-DIP |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A DIFF 8-SOIC |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Inverting, Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
MOSFET DVR ULT FAST 14A 8-DIP |
Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 14A, 14A | Non-Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A INV 8-SOIC |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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IXYS Integrated Circuits Division |
MOSFET N-CH 14A LO SIDE TO-220-5 |
Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 14A, 14A | Non-Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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IXYS Integrated Circuits Division |
IC MOSFET DRIVER 3A SOIC |
Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 3V | 3A, 3A | Non-Inverting | - | 18ns, 18ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC GATE DVR HALF 600V 14SOIC |
Active | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2V | 1.4A, 1.8A | Non-Inverting | 600V | 23ns, 14ns | -40°C ~ 150°C (TJ) | Surface Mount | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
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IXYS Integrated Circuits Division |
IC GATE DVR 9A DUAL HS TO220-5 |
Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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IXYS Integrated Circuits Division |
IC GATE DVR 9A DUAL HS TO263-5 |
Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 9A, 9A | Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-6, D²Pak (5 Leads + Tab), TO-263BA | TO-263-5 |
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IXYS Integrated Circuits Division |
1200V HIGH AND LOW SIDE GATE DRI |
Active | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 15 V ~ 20 V | 6V, 9.5V | 2A, 2A | Non-Inverting | 1200V | 9.4ns, 9.7ns | -40°C ~ 150°C (TJ) | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
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IXYS Integrated Circuits Division |
1200V HIGH AND LOW SIDE GATE DRI |
Active | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 15 V ~ 20 V | 6V, 9.5V | 2A, 2A | Non-Inverting | 1200V | 9.4ns, 9.7ns | -40°C ~ 150°C (TJ) | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
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IXYS Integrated Circuits Division |
MOSFET N-CH 2A DUAL LO SIDE 8-DI |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A INV 8-DIP |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A INV 8-SOIC |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL ENABLE 8DIP |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
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IXYS Integrated Circuits Division |
IC MOSFET DRIVER 3A SOIC |
Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 3V | 3A, 3A | Inverting | - | 18ns, 18ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
MOSFET N-CH 2A DUAL LO SIDE 8-SO |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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IXYS Integrated Circuits Division |
IC GATE DVR HIGH/LOW 600V 16SOIC |
Active | Half-Bridge | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 10 V ~ 20 V | 6V, 9.5V | 2A, 2A | Non-Inverting | 600V | 9.4ns, 9.7ns | -40°C ~ 150°C (TJ) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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IXYS Integrated Circuits Division |
IC MOSFET DRIVER 1.5A 8SOIC |
Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 10ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC MOSFET DRIVER 1.5A 8SOIC |
Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 10ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC MOSFET DRIVER 1.5A 8SOIC |
Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 10ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC MOSFET DVR INV 1.5A 8-DFN |
Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 10ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN (3x3) |
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IXYS Integrated Circuits Division |
5A DUAL LOW-SIDE NON-INVERTING |
Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IXYS Integrated Circuits Division |
5A DUAL LOW-SIDE NON-INVERTING |
Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IXYS Integrated Circuits Division |
2A MOSFET 8 DFN DUAL INV/NON-INV |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Inverting, Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) |
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IXYS Integrated Circuits Division |
2A 8 SOIC DUAL INV/NON-INVERTING |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Inverting, Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
2A 8 DFN DUAL INVERTING |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) |