Numéro d'article Fabricant / marque Brève description État de la pièceConfiguration pilotéeType de canalNombre de pilotesType de porteTension - AlimentationTension logique - VIL, VIHCourant - sortie de crête (source, évier)Type d'entréeTension latérale élevée - Max (Bootstrap)Rise / Fall Time (Typ)Température de fonctionnementType de montagePaquet / casPackage de périphérique fournisseur
IXYS Integrated Circuits Division 2A 8 SOIC DUAL INVERTING ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V2A, 2AInverting
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7.5ns, 6.5ns-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
IXYS Integrated Circuits Division 2A 8 LEAD SOIC DUAL NON INVERTIN ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V2A, 2ANon-Inverting
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7.5ns, 6.5ns-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
IXYS Integrated Circuits Division IC GATE DVR 2A DUAL HS 8DFN ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V2A, 2ANon-Inverting
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7.5ns, 6.5ns-55°C ~ 150°C (TJ)Surface Mount8-VDFN Exposed Pad8-DFN-EP (5x4)
IXYS Integrated Circuits Division 2A MOSFET 8 DIP DUAL INV/NON-INV ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V2A, 2AInverting, Non-Inverting
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7.5ns, 6.5ns-55°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-DIP
IXYS Integrated Circuits Division 2A 8 DIP DUAL INVERTING ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V2A, 2AInverting
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7.5ns, 6.5ns-55°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-DIP
IXYS Integrated Circuits Division IC MOSFET DRIVER 3A SOIC ActiveLow-SideIndependent2N-Channel, P-Channel MOSFET4.5 V ~ 30 V0.8V, 3V3A, 3AInverting
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18ns, 18ns-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
IXYS Integrated Circuits Division IC MOSFET DRIVER 3A SOIC ActiveLow-SideIndependent2N-Channel, P-Channel MOSFET4.5 V ~ 30 V0.8V, 3V3A, 3ANon-Inverting
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18ns, 18ns-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
IXYS Integrated Circuits Division IC MOSFET DRIVER 3A SOIC ActiveLow-SideIndependent2N-Channel, P-Channel MOSFET4.5 V ~ 30 V0.8V, 3V3A, 3AInverting, Non-Inverting
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18ns, 18ns-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
IXYS Integrated Circuits Division 3 AMP DUAL INVERTING LOW-SIDE Active
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IXYS Integrated Circuits Division 3 AMP DUAL NON-INVERTING LOW-S Active
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IXYS Integrated Circuits Division 3 AMP DUAL ONE INVERTING AND O Active
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IXYS Integrated Circuits Division IC MOSFET DRIVER 3A SOIC ActiveLow-SideIndependent2N-Channel, P-Channel MOSFET4.5 V ~ 30 V0.8V, 3V3A, 3AInverting, Non-Inverting
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18ns, 18ns-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
IXYS Integrated Circuits Division 3A DUAL NON-INVERTING LOW SIDE G Active
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IXYS Integrated Circuits Division IC GATE DVR 9A NON-INV 8-SOIC ActiveLow-SideSingle1IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V9A, 9ANon-Inverting
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22ns, 15ns-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
IXYS Integrated Circuits Division IC GATE DVR 9A NON-INV 8SOIC ActiveLow-SideSingle1IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V9A, 9AInverting
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22ns, 15ns-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
IXYS Integrated Circuits Division IC GATE DVR 9A NON-INV 8SOIC ActiveLow-SideSingle1IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V9A, 9ANon-Inverting
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22ns, 15ns-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
IXYS Integrated Circuits Division IC GATE DVR 4A DUAL HS 8DFN ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V4A, 4ANon-Inverting
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9ns, 8ns-55°C ~ 150°C (TJ)Surface Mount8-VDFN Exposed Pad8-DFN-EP (5x4)
IXYS Integrated Circuits Division IC GATE DVR 4A DUAL HS 8SOIC ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V4A, 4ANon-Inverting
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9ns, 8ns-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
IXYS Integrated Circuits Division IC GATE DVR 4A DUAL HS 8SOIC ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V4A, 4AInverting, Non-Inverting
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9ns, 8ns-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
IXYS Integrated Circuits Division IC GATE DVR 4A DUAL HS 8SOIC ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V4A, 4AInverting
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9ns, 8ns-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
IXYS Integrated Circuits Division IC GATE DVR 4A DUAL HS 8SOIC ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V4A, 4ANon-Inverting
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9ns, 8ns-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
IXYS Integrated Circuits Division IC GATE DVR 9A NON-INV 8DIP ActiveLow-SideSingle1IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V9A, 9AInverting
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22ns, 15ns-55°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-DIP
IXYS Integrated Circuits Division IC GATE DVR 9A NON-INV 8SOIC ActiveLow-SideSingle1IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V9A, 9AInverting
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22ns, 15ns-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
IXYS Integrated Circuits Division IC GATE DVR 9A NON-INV 8DIP ActiveLow-SideSingle1IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V9A, 9ANon-Inverting
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22ns, 15ns-55°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-DIP
IXYS Integrated Circuits Division IC GATE DVR 9A NON-INV 8SOIC ActiveLow-SideSingle1IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V9A, 9ANon-Inverting
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22ns, 15ns-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
IXYS Integrated Circuits Division IC GATE DVR 4A DUAL HS 8DIP ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V4A, 4AInverting, Non-Inverting
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9ns, 8ns-55°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-DIP
IXYS Integrated Circuits Division 2A 8SOIC EXP MTL DUAL IN/NON-INV ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V2A, 2AInverting, Non-Inverting
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7.5ns, 6.5ns-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width) Exposed Pad8-SOIC-EP
IXYS Integrated Circuits Division 2A 8 SOIC EXP METAL DUAL INVERT ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V2A, 2AInverting
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7.5ns, 6.5ns-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width) Exposed Pad8-SOIC-EP
IXYS Integrated Circuits Division 2A 8SOIC EXP MTL DUAL NON INVERT ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V2A, 2ANon-Inverting
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7.5ns, 6.5ns-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width) Exposed Pad8-SOIC-EP
IXYS Integrated Circuits Division 2A 8SOIC EXP MTL DUAL IN/NON-INV ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V2A, 2AInverting, Non-Inverting
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7.5ns, 6.5ns-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width) Exposed Pad8-SOIC-EP
IXYS Integrated Circuits Division 2A 8 SOIC EXP METAL DUAL INVERT ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V2A, 2AInverting
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7.5ns, 6.5ns-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width) Exposed Pad8-SOIC-EP
IXYS Integrated Circuits Division IC HIGH SIDE DRIVER 8DIP ActiveHigh-SideSingle1IGBT, N-Channel MOSFET9 V ~ 12 V0.8V, 3V250mA, 500mANon-Inverting600V23ns, 20ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-DIP
IXYS Integrated Circuits Division IC HIGH SIDE DRIVER 8SOIC ActiveHigh-SideSingle1IGBT, N-Channel MOSFET9 V ~ 12 V0.8V, 3V250mA, 500mANon-Inverting600V23ns, 20ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
IXYS Integrated Circuits Division IC MOSFET/IGBT DVR 600V 8-SOIC ActiveHigh-SideSingle1IGBT, N-Channel MOSFET9 V ~ 12 V0.8V, 3V250mA, 500mANon-Inverting600V23ns, 20ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
IXYS Integrated Circuits Division IC GATE DVR HALF 600V 14SOIC ActiveHalf-BridgeSynchronous2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2V1.4A, 1.8ANon-Inverting600V23ns, 14ns-40°C ~ 150°C (TJ)Surface Mount14-SOIC (0.154", 3.90mm Width)14-SOIC
IXYS Integrated Circuits Division 14A 8 PIN DIP INVERTING ActiveLow-SideSingle1IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V14A, 14AInverting
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25ns, 18ns-55°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-DIP
IXYS Integrated Circuits Division 14A 8 PIN DIP NON INVERTING ActiveLow-SideSingle1IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V14A, 14ANon-Inverting
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25ns, 18ns-55°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-DIP
IXYS Integrated Circuits Division IC GATE DVR HIGH/LOW 600V 16SOIC ActiveHalf-BridgeIndependent2IGBT, N-Channel, P-Channel MOSFET10 V ~ 20 V6V, 9.5V2A, 2ANon-Inverting600V9.4ns, 9.7ns-40°C ~ 150°C (TJ)Surface Mount16-SOIC (0.295", 7.50mm Width)16-SOIC
IXYS Integrated Circuits Division IC GATE DVR HALF 600V 14DIP ActiveHalf-BridgeSynchronous2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2V1.4A, 1.8ANon-Inverting600V23ns, 14ns-40°C ~ 150°C (TJ)Through Hole14-DIP (0.300", 7.62mm)14-DIP
IXYS Integrated Circuits Division IC GATE DRVR 600V HI/LO 14DIP ActiveHalf-BridgeIndependent2IGBT, N-Channel, P-Channel MOSFET10 V ~ 20 V6V, 9.5V2A, 2ANon-Inverting600V9.4ns, 9.7ns-40°C ~ 150°C (TJ)Through Hole14-DIP (0.300", 7.62mm)14-DIP
IXYS Integrated Circuits Division IC GATE DVR 9A NON-INV 8SOIC ActiveLow-SideSingle1IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V9A, 9ANon-Inverting
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22ns, 15ns-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width) Exposed Pad8-SOIC-EP
IXYS Integrated Circuits Division IC GATE DVR 9A NON-INV 8SOIC ActiveLow-SideSingle1IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V9A, 9AInverting
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22ns, 15ns-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width) Exposed Pad8-SOIC-EP
IXYS Integrated Circuits Division IC GATE DVR 9A NON-INV 8SOIC ActiveLow-SideSingle1IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V9A, 9ANon-Inverting
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22ns, 15ns-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width) Exposed Pad8-SOIC-EP
IXYS Integrated Circuits Division IC GATE DVR 9A NON-INV 8SOIC ActiveLow-SideSingle1IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V9A, 9AInverting
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22ns, 15ns-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width) Exposed Pad8-SOIC-EP
IXYS Integrated Circuits Division IC GATE DVR 4A DUAL HS 8SOIC ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V4A, 4ANon-Inverting
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9ns, 8ns-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width) Exposed Pad8-SOIC-EP
IXYS Integrated Circuits Division IC GATE DVR 4A DUAL HS 8SOIC ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V4A, 4AInverting, Non-Inverting
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9ns, 8ns-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width) Exposed Pad8-SOIC-EP
IXYS Integrated Circuits Division IC GATE DVR 4A DUAL HS 8SOIC ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V4A, 4AInverting
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9ns, 8ns-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width) Exposed Pad8-SOIC-EP
IXYS Integrated Circuits Division IC GATE DVR 4A DUAL HS 8SOIC ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V4A, 4ANon-Inverting
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9ns, 8ns-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width) Exposed Pad8-SOIC-EP
IXYS Integrated Circuits Division IC GATE DVR 9A NON-INV TO263-5 ActiveLow-SideSingle1IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V9A, 9ANon-Inverting
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22ns, 15ns-55°C ~ 150°C (TJ)Surface MountTO-263-6, D²Pak (5 Leads + Tab), TO-263BATO-263
IXYS Integrated Circuits Division IC GATE DVR 9A NON-INV TO220-5 ActiveLow-SideSingle1IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 35 V0.8V, 3V9A, 9AInverting
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22ns, 15ns-55°C ~ 150°C (TJ)Through HoleTO-220-5TO-220-5
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