Manufacturer Part NumberEPC2108ENGRT
Manufacturer / BrandEPC
Available Quantity199270 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionTRANSISTOR GAN 3N-CH BUMPED DIE
Product CategoryTransistors - FETs, MOSFETs - Arrays
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download EPC2108ENGRT.pdf

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Part Number
EPC2108ENGRT
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Active
FET Type
3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET Feature
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
60V, 100V
Current - Continuous Drain (Id) @ 25°C
1.7A, 500mA
Rds On (Max) @ Id, Vgs
190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V
Vgs(th) (Max) @ Id
2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs
0.22nC @ 5V, 0.044nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
22pF @ 30V, 7pF @ 30V
Power - Max
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
9-VFBGA
Supplier Device Package
9-BGA (1.35x1.35)
Weight
Contact us
Application
Email for details
Replacement Part
EPC2108ENGRT

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