Manufacturer Part NumberEPC2016
Manufacturer / BrandEPC
Available Quantity179420 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionTRANSISTOR GAN 100V 11A BUMPED DIE
Product CategoryTransistors - FETs, MOSFETs - Single
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download EPC2016.pdf

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Part Number
EPC2016
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Discontinued at -
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
16 mOhm @ 11A, 5V
Vgs(th) (Max) @ Id
2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs
5.2nC @ 5V
Vgs (Max)
+6V, -5V
Input Capacitance (Ciss) (Max) @ Vds
520pF @ 50V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-40°C ~ 125°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Die
Package / Case
Die
Weight
Contact us
Application
Email for details
Replacement Part
EPC2016

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