Manufacturer Part NumberEPC2032ENGRT
Manufacturer / BrandEPC
Available Quantity19000 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionTRANSISTOR GAN 100V 48A BUMPED DIE
Product CategoryTransistors - FETs, MOSFETs - Single
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download EPC2032ENGRT.pdf

Please fill the below inquiry form, we will reply you the quotation for EPC2032ENGRT within 24 hours.

Part Number
EPC2032ENGRT
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Discontinued at -
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
48A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
4 mOhm @ 30A, 5V
Vgs(th) (Max) @ Id
2.5V @ 11mA
Gate Charge (Qg) (Max) @ Vgs
15nC @ 5V
Vgs (Max)
+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds
1530pF @ 50V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Die
Package / Case
Die
Weight
Contact us
Application
Email for details
Replacement Part
EPC2032ENGRT

Related Components made by EPC

Related Keywords For "EPC2"

Part Number Manufacturer Description
EPC2 ALTERA (INTEL) SRAM-Based LUT Devices IC
EPC2-TC32 ALTERA (INTEL) EPC2-TC32 QFP IC
EPC2-TI32 ALTERA (INTEL) EPC2-TI32 Original IC
EPC2001 EPC TRANSISTOR GAN 100V 25A BUMPED DIE
EPC2001C EPC TRANSISTOR GAN 100V 36A BUMPED DIE
EPC2007 EPC TRANSISTOR GAN 100V 6A BUMPED DIE
EPC2007C EPC TRANSISTOR GAN 100V 6A BUMPED DIE
EPC2010 EPC TRANSISTOR GAN 200V 12A BUMPED DIE
EPC2010C EPC TRANSISTOR GAN 200V 22A BUMPED DIE
EPC2012 EPC TRANSISTOR GAN 200V 3A BUMPED DIE
EPC2012C EPC TRANSISTOR GAN 200V 5A BUMPED DIE
EPC2014 EPC TRANSISTOR GAN 40V 10A BUMPED DIE