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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 20A I2PAK |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 155 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | ±30V | 1680pF @ 300V | - | 165W (Tc) | 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 500MA VESM |
Active | N-Channel | MOSFET (Metal Oxide) | 20V | 500mA (Ta) | 1.5V, 5V | 630 mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | ±10V | 46pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | VESM | SOT-723 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 6A SOT23F |
Active | P-Channel | MOSFET (Metal Oxide) | 20V | 3.9A (Ta) | 1.5V, 4.5V | 93 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.6nC @ 4.5V | ±8V | 290pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 6A SOT23F |
Active | P-Channel | MOSFET (Metal Oxide) | 20V | 6A (Ta) | 1.5V, 4.5V | 29.8 mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8nC @ 4.5V | ±8V | 840pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 12V 6A SOT23F |
Active | P-Channel | MOSFET (Metal Oxide) | 12V | 6A (Ta) | 1.8V, 8V | 17.6 mOhm @ 6A, 8V | 1V @ 1mA | 19.5nC @ 4.5V | ±10V | 1400pF @ 6V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 92A TSON |
Active | N-Channel | MOSFET (Metal Oxide) | 40V | 92A (Tc) | 4.5V, 10V | 3.7 mOhm @ 46A, 10V | 2.4V @ 0.2mA | 27nC @ 10V | ±20V | 2500pF @ 20V | - | 960mW (Ta), 81W (Tc) | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 150A 8SOP |
Active | N-Channel | MOSFET (Metal Oxide) | 30V | 150A (Tc) | 4.5V, 10V | 0.65 mOhm @ 50A, 10V | 2.1V @ 1mA | 110nC @ 10V | ±20V | 10000pF @ 15V | - | 960mW (Ta), 170W (Tc) | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
Active | N-Channel | MOSFET (Metal Oxide) | 60V | 260A (Tc) | 4.5V, 10V | 1.29 mOhm @ 50A, 10V | 2.5V @ 1mA | 91nC @ 10V | ±20V | 8100pF @ 30V | - | 960mW (Ta), 170W (Tc) | 175°C | Surface Mount | 8-DSOP Advance | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 38.8A T0247 |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 38.8A (Ta) | 10V | 74 mOhm @ 19.4A, 10V | 4.5V @ 1.9mA | 135nC @ 10V | ±30V | 4100pF @ 300V | - | 270W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 0.17A SMD |
Active | N-Channel | MOSFET (Metal Oxide) | 60V | 170mA (Ta) | 4.5V, 10V | 3.9 Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.35nC @ 4.5V | ±20V | 17pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | USM | SC-70, SOT-323 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 0.1A SSM |
Active | N-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 3.6 Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 13.5pF @ 3V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | USM | SC-70, SOT-323 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 500MA SSM |
Active | N-Channel | MOSFET (Metal Oxide) | 20V | 500mA (Ta) | 1.5V, 5V | 630 mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | ±10V | 46pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | SSM | SC-75, SOT-416 |
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Toshiba Semiconductor and Storage |
MOSFET P CH 30V 6A 2-3Z1A |
Active | P-Channel | MOSFET (Metal Oxide) | 30V | 6A (Ta) | 1.8V, 10V | 42 mOhm @ 5A, 10V | 1.2V @ 1mA | 8.2nC @ 4.5V | ±12V | 560pF @ 15V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET NCH 30V 15A UDFNB |
Active | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta) | 4.5V, 10V | 8.9 mOhm @ 4A, 10V | 2.1V @ 100µA | 7.5nC @ 4.5V | ±20V | 1130pF @ 15V | - | 1.25W (Ta) | 150°C (TA) | Surface Mount | 6-UDFNB (2x2) | 6-WDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 9.4A 8TSON |
Active | N-Channel | MOSFET (Metal Oxide) | 100V | 9.4A (Tc) | 10V | 33 mOhm @ 4.7A, 10V | 4V @ 100µA | 11nC @ 10V | ±20V | 880pF @ 50V | - | 700mW (Ta), 27W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 150V 9A 8TSON |
Active | N-Channel | MOSFET (Metal Oxide) | 150V | 9A (Ta) | 10V | 59 mOhm @ 4.5A, 10V | 4V @ 200µA | 7nC @ 10V | ±20V | 600pF @ 75V | - | 700mW (Ta), 39W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N CH 100V 24A 8-SOP |
Active | N-Channel | MOSFET (Metal Oxide) | 100V | 24A (Tc) | 10V | 13.6 mOhm @ 12A, 10V | 4V @ 300µA | 22nC @ 10V | ±20V | 1900pF @ 50V | - | 1.6W (Ta), 48W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 60A 8SOP ADV |
Active | P-Channel | MOSFET (Metal Oxide) | 20V | 60A (Tc) | 2.5V, 4.5V | 1.7 mOhm @ 30A, 4.5V | 1.2V @ 1mA | 182nC @ 5V | ±12V | 10900pF @ 10V | - | 78W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 150V 18A 8-SOP |
Active | N-Channel | MOSFET (Metal Oxide) | 150V | 18A (Ta) | 10V | 33 mOhm @ 9A, 10V | 4V @ 300µA | 10.6nC @ 10V | ±20V | 1100pF @ 75V | - | 1.6W (Ta), 57W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N CH 100V 148A TO220 |
Active | N-Channel | MOSFET (Metal Oxide) | 100V | 148A (Ta) | 10V | 4.8 mOhm @ 32.5A, 10V | 4V @ 1mA | 81nC @ 10V | ±20V | 5400pF @ 50V | - | 192W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 100A TO220 |
Active | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Ta) | 10V | 3.4 mOhm @ 50A, 10V | 4V @ 1mA | 140nC @ 10V | ±20V | 8800pF @ 50V | - | 255W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 30.8A TO-247 |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 99 mOhm @ 15.4A, 10V | 4.5V @ 1.5mA | 105nC @ 10V | ±30V | 3000pF @ 300V | - | 230W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 0.4A |
Active | N-Channel | MOSFET (Metal Oxide) | 60V | 400mA (Ta) | 4.5V, 10V | 1.5 Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | ±20V | 40pF @ 10V | - | 270mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | S-Mini | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 12V 10A UDFN6B |
Active | P-Channel | MOSFET (Metal Oxide) | 12V | 10A (Ta) | 1.8V, 8V | 16.2 mOhm @ 4A, 8V | 1V @ 1mA | 19.5nC @ 4.5V | ±10V | 1400pF @ 6V | - | 1.25W (Ta) | 150°C (TJ) | Surface Mount | 6-UDFNB (2x2) | 6-WDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET P CH 20V 6A UF6 |
Active | P-Channel | MOSFET (Metal Oxide) | 20V | 6A (Ta) | 1.5V, 4.5V | 22.5 mOhm @ 6A, 4.5V | 1V @ 1mA | 23.1nC @ 4.5V | ±8V | 1650pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | UF6 | 6-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N CH 60V 40A TO-220 |
Active | N-Channel | MOSFET (Metal Oxide) | 60V | 40A (Ta) | 10V | 10.4 mOhm @ 20A, 10V | 4V @ 300µA | 23nC @ 10V | ±20V | 1700pF @ 30V | - | 67W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 58A TO-220 |
Active | N-Channel | MOSFET (Metal Oxide) | 60V | 58A (Tc) | 10V | 5.4 mOhm @ 29A, 10V | 4V @ 500µA | 46nC @ 10V | ±20V | 3400pF @ 30V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 120V 32A TO-220 |
Active | N-Channel | MOSFET (Metal Oxide) | 120V | 32A (Tc) | 10V | 13.8 mOhm @ 16A, 10V | 4V @ 500µA | 34nC @ 10V | ±20V | 2000pF @ 60V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 120V 60A TO-220 |
Active | N-Channel | MOSFET (Metal Oxide) | 120V | 60A (Tc) | 10V | 13.8 mOhm @ 16A, 10V | 4V @ 500µA | 34nC @ 10V | ±20V | 2000pF @ 60V | - | 98W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 52A TO-220 |
Active | N-Channel | MOSFET (Metal Oxide) | 100V | 22A (Tc) | 10V | 13.8 mOhm @ 11A, 10V | 4V @ 300µA | 28nC @ 10V | ±20V | 1800pF @ 50V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 75A TO-220 |
Active | N-Channel | MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 9.5 mOhm @ 17A, 10V | 4V @ 500µA | 38nC @ 10V | ±20V | 2600pF @ 50V | - | 103W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 34A TO-220 |
Active | N-Channel | MOSFET (Metal Oxide) | 100V | 34A (Tc) | 10V | 9.5 mOhm @ 17A, 10V | 4V @ 500µA | 38nC @ 10V | ±20V | 2600pF @ 50V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 900V TO220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 900V | 7A (Ta) | 10V | 2 Ohm @ 3.5A, 10V | 4V @ 700µA | 32nC @ 10V | ±30V | 1350pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 800V TO220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 800V | 10A (Ta) | 10V | 1 Ohm @ 5A, 10V | 4V @ 1mA | 46nC @ 10V | ±30V | 2000pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13.7A TO-220 |
Active | N-Channel | MOSFET (Metal Oxide) | 650V | 13.7A (Ta) | 10V | 250 mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35nC @ 10V | ±30V | 1300pF @ 300V | - | 130W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 25A TO-220AB |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Ta) | 10V | 125 mOhm @ 7.5A, 10V | 3.5V @ 1.2mA | 40nC @ 10V | ±30V | 2400pF @ 300V | - | 180W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 27.6A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 650V | 27.6A (Ta) | 10V | 110 mOhm @ 13.8A, 10V | 3.5V @ 1.6mA | 75nC @ 10V | ±30V | 3000pF @ 300V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 30.8A TO-220 |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 88 mOhm @ 9.4A, 10V | 3.5V @ 1.5mA | 65nC @ 10V | ±30V | 3000pF @ 300V | Super Junction | 230W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 30.8A TO-247 |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 88 mOhm @ 9.4A, 10V | 3.5V @ 1.5mA | 65nC @ 10V | ±30V | 3000pF @ 300V | Super Junction | 230W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 38.8A TO247 |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 38.8A (Ta) | 10V | 65 mOhm @ 19.4A, 10V | 3.7V @ 1.9mA | 110nC @ 10V | ±30V | 4100pF @ 300V | Super Junction | 270W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 30V 19A 8SOP |
Active | N-Channel | MOSFET (Metal Oxide) | 30V | 19A (Ta) | 4.5V, 10V | 6.2 mOhm @ 9A, 10V | 2.3V @ 200µA | 17nC @ 10V | ±20V | 1400pF @ 15V | - | 1W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N CH 30V 27A 8TSON-ADV |
Active | N-Channel | MOSFET (Metal Oxide) | 30V | 27A (Tc) | 4.5V, 10V | 6 mOhm @ 13.5A, 10V | 2.3V @ 200µA | 17nC @ 10V | ±20V | 1400pF @ 15V | - | 700mW (Ta), 32W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 35A TO-220 |
Active | N-Channel | MOSFET (Metal Oxide) | 80V | 35A (Tc) | 10V | 12.2 mOhm @ 17.5A, 10V | 4V @ 300µA | 25nC @ 10V | ±20V | 1700pF @ 40V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
X34 SMALL LOW ON RESISTANCE NCH |
Active | N-Channel | MOSFET (Metal Oxide) | 60V | 300mA (Ta) | 4.5V, 10V | 1.5 Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | ±20V | 40pF @ 10V | - | 150mW (Ta) | 150°C | Surface Mount | SSM | SC-75, SOT-416 |
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Toshiba Semiconductor and Storage |
X34 SMALL LOW ON RESISTANCE PCH |
Active | P-Channel | MOSFET (Metal Oxide) | 20V | 250mA (Ta) | 1.2V, 4.5V | 1.4 Ohm @ 150mA, 4.5V | 1V @ 100µA | - | ±10V | 42pF @ 10V | - | 150mW (Ta) | 150°C | Surface Mount | SSM | SC-75, SOT-416 |
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Toshiba Semiconductor and Storage |
SMALL LOW RON NCH MOSFETS ID 4A |
Active | N-Channel | MOSFET (Metal Oxide) | 30V | 4A (Ta) | 1.8V, 4.5V | 56 mOhm @ 2A, 4.5V | 1V @ 1mA | 2.2nC @ 4.5V | +12V, -8V | 200pF @ 10V | - | 2W (Ta) | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
X34 PB-F UF6 S-MOS LF TRANSIST |
Active | P-Channel | MOSFET (Metal Oxide) | 20V | 2.5A (Ta) | 2V, 4.5V | 64 mOhm @ 1.5A, 4.5V | 1.2V @ 200µA | - | ±10V | 800pF @ 10V | - | 500mW (Ta) | 150°C | Surface Mount | UF6 | 6-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 11.5A DPAK |
Active | N-Channel | MOSFET (Metal Oxide) | 650V | 11.5A (Tc) | 10V | 290 mOhm @ 5.8A, 10V | 4V @ 450µA | 25nC @ 10V | ±30V | 730pF @ 300V | - | 100W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 9.7A TO220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 9.7A (Tc) | 10V | 380 mOhm @ 4.9A, 10V | 4V @ 360µA | 20nC @ 10V | ±30V | 590pF @ 300V | - | 30W | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 11.5A TO220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 650V | 11.5A (Tc) | 10V | 290 mOhm @ 5.8A, 10V | 4V @ 450µA | 25nC @ 10V | ±30V | 730pF @ 300V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |