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Infineon Technologies |
DIODE SCHOTTKY 650V 3A TO263-2 |
Discontinued at - | Silicon Carbide Schottky | 650V | 3A (DC) | 1.8V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 500µA @ 650V | 100pF @ 1V, 1MHz | Surface Mount | TO-262 | PG-TO263-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 4A TO263-2 |
Discontinued at - | Silicon Carbide Schottky | 650V | 4A (DC) | 1.8V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 670µA @ 650V | 130pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 5A TO263-2 |
Discontinued at - | Silicon Carbide Schottky | 650V | 5A (DC) | 1.8V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 830µA @ 650V | 160pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 6A TO263-2 |
Discontinued at - | Silicon Carbide Schottky | 650V | 6A (DC) | 1.8V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 1.1mA @ 650V | 190pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 8A TO263-2 |
Discontinued at - | Silicon Carbide Schottky | 650V | 8A (DC) | 1.8V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 1.4mA @ 650V | 250pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 9A TO263-2 |
Discontinued at - | Silicon Carbide Schottky | 650V | 9A (DC) | 1.8V @ 9A | No Recovery Time > 500mA (Io) | 0ns | 1.6mA @ 650V | 270pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 10A TO263-2 |
Discontinued at - | Silicon Carbide Schottky | 650V | 10A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 1.7mA @ 650V | 300pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 12A TO263-2 |
Discontinued at - | Silicon Carbide Schottky | 650V | 12A (DC) | 1.8V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 2.1mA @ 650V | 360pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 2A VSON-4 |
Discontinued at - | Silicon Carbide Schottky | 650V | 2A (DC) | 1.7V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 35µA @ 650V | 70pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 4A VSON-4 |
Discontinued at - | Silicon Carbide Schottky | 650V | 4A (DC) | 1.7V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 70µA @ 650V | 130pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 6A VSON-4 |
Discontinued at - | Silicon Carbide Schottky | 650V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 110µA @ 650V | 190pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 150°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 8A VSON-4 |
Discontinued at - | Silicon Carbide Schottky | 650V | 8A (DC) | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 140µA @ 650V | 250pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 150°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 10A VSON-4 |
Discontinued at - | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 180µA @ 650V | 300pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 150°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 12A VSON-4 |
Discontinued at - | Silicon Carbide Schottky | 650V | 12A (DC) | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 190µA @ 650V | 360pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 200A DIE |
Obsolete | Standard | 1200V | 200A | 2.7V @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | 360ns | 3.6µA @ 1200V | - | Surface Mount | Die | Die | -40°C ~ 175°C |
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Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
Obsolete | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
Obsolete | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 25A DIE |
Obsolete | Standard | 1200V | 25A | 2.7V @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | 190ns | 700nA @ 1200V | - | Surface Mount | Die | Die | -40°C ~ 150°C |
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Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
Obsolete | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
Obsolete | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
Obsolete | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
Obsolete | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
Obsolete | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
Obsolete | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
Obsolete | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
Obsolete | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
Obsolete | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
Obsolete | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
Obsolete | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 75A DIE |
Obsolete | Standard | 1200V | 75A | 2.7V @ 75A | Fast Recovery =< 500ns, > 200mA (Io) | 285ns | 1.5µA @ 1200V | - | Surface Mount | Die | Die | -40°C ~ 150°C |
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Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
Obsolete | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
Obsolete | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 100A DIE |
Obsolete | Standard | 1200V | 100A | 2.7V @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | 270ns | 2µA @ 1200V | - | Surface Mount | Die | Die | -40°C ~ 150°C |
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Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
Obsolete | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
Obsolete | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
Obsolete | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 5A DIE |
Obsolete | Standard | 1200V | 5A | 2.7V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 96ns | 100nA @ 1200V | - | Surface Mount | Die | Die | -40°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 150A DIE |
Obsolete | Standard | 1200V | 150A | 2.7V @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | 355ns | 3µA @ 1200V | - | Surface Mount | Die | Die | -40°C ~ 150°C |
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Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
Obsolete | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
Obsolete | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 10A DIE |
Obsolete | Standard | 1200V | 10A | 2.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 154ns | 200nA @ 1200V | - | Surface Mount | Die | Die | -40°C ~ 150°C |
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Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
Obsolete | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
Obsolete | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE SCHOTTKY 1200V 10A TO247-3 |
Obsolete | Silicon Carbide Schottky | 1200V | 10A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 240µA @ 1200V | 580pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 1200V 15A TO247-3 |
Obsolete | Silicon Carbide Schottky | 1200V | 15A (DC) | 1.8V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 305µA @ 1200V | 870pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SIC 600V 4A SAWN WAFER |
Obsolete | Silicon Carbide Schottky | 600V | 4A (DC) | 1.9V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 130pF @ 1V, 1MHz | Surface Mount | Die | Die | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURPOSE SAWN WAFER |
Obsolete | - | - | - | - | - | - | - | - | Surface Mount | Die | Sawn on foil | - |
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Infineon Technologies |
DIODE SIC 600V 5A SAWN WAFER |
Obsolete | Silicon Carbide Schottky | 600V | 5A (DC) | 1.7V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 70µA @ 600V | 240pF @ 1V, 1MHz | Surface Mount | Die | Die | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SIC 600V 8A SAWN WAFER |
Obsolete | Silicon Carbide Schottky | 600V | 8A (DC) | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 310pF @ 1V, 1MHz | Surface Mount | Die | Die | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SIC 600V 8A SAWN WAFER |
Obsolete | Silicon Carbide Schottky | 600V | 8A (DC) | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 310pF @ 1V, 1MHz | Surface Mount | Die | Die | -55°C ~ 175°C |