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  4. Dioden - Gleichrichter - Einzeln
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Hersteller für Dioden - Gleichrichter - Einzeln

AVX Corporation
Bourns
Central Semiconductor
Comchip Technology
Sensata Technologies – Crydom
Diodes Incorporated
GeneSiC Semiconductor
Global Power Technologies Group, Inc.
Infineon Technologies
IXYS Corporation
Littelfuse
MACOM Technology Solutions
Micro Commercial Components (MCC)
Microsemi
Nexperia
NXP Semiconductors
ON Semiconductor
Panasonic
Phoenix Contact
Power Integrations
Powerex, Inc.
Renesas Electronics America
ROHM Semiconductor
Sanken Electric Co., Ltd.
Semtech
SMC Diode Solutions
Esterline Connection Technologies
STMicroelectronics
Taiwan Semiconductor
Texas Instruments
Torex Semiconductor
Toshiba Semiconductor and Storage
TT Electronics/Optek Technology
Vishay
WeEn Semiconductors Co., Ltd
Wolfspeed
Artikelnummer Hersteller / Marke Kurze Beschreibung TeilstatusDioden-TypSpannung - DC Reverse (Vr) (Max)Strom - Durchschnittlich gleichgerichtet (Io)Spannung - Vorwärts (Vf) (Max) @ IfGeschwindigkeitReverse Wiederherstellungszeit (trr)Strom - Rückwärtsleckage @ VrKapazität @ Vr, FBefestigungsartPaket / FallLieferantengerätepaketBetriebstemperatur - Kreuzung
BAT6402WH6327XTSA1
 Infineon Technologies DIODE SCHOTTKY 40V 120MA SCD80-2 ObsoleteSchottky40V120mA750mV @ 100mASmall Signal =< 200mA (Io), Any Speed5ns2µA @ 30V6pF @ 1V, 1MHzSurface MountSC-80PG-SCD80-2150°C (Max)
BAS3020BH6327XTSA1
 Infineon Technologies DIODE SCHOTTKY 30V 2A SOT363-6 ObsoleteSchottky30V2A (DC)600mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 30V70pF @ 1V, 1MHzSurface Mount6-VSSOP, SC-88, SOT-363PG-SOT363-6-55°C ~ 125°C
BAT54WH6327XTSA1
 Infineon Technologies DIODE SCHOTTKY 30V 200MA SOT323 ObsoleteSchottky30V200mA (DC)800mV @ 100mASmall Signal =< 200mA (Io), Any Speed5ns2µA @ 25V10pF @ 1V, 1MHzSurface MountSC-70, SOT-323PG-SOT323-3150°C (Max)
IDB09E60ATMA1
 Infineon Technologies DIODE GEN PURP 600V 19.3A TO263 ObsoleteStandard600V19.3A (DC)2V @ 9AFast Recovery =< 500ns, > 200mA (Io)75ns50µA @ 600V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABPG-TO263-3-55°C ~ 175°C
IDB15E60
 Infineon Technologies DIODE GEN PURP 600V 29.2A TO263 ObsoleteStandard600V29.2A (DC)2V @ 15AFast Recovery =< 500ns, > 200mA (Io)87ns50µA @ 600V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABPG-TO263-3-55°C ~ 175°C
IDB18E120ATMA1
 Infineon Technologies DIODE GEN PURP 1.2KV 31A TO263-3 ObsoleteStandard1200V31A (DC)2.15V @ 18AFast Recovery =< 500ns, > 200mA (Io)195ns100µA @ 1200V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABPG-TO263-3-55°C ~ 150°C
IDB45E60ATMA1
 Infineon Technologies DIODE GEN PURP 600V 71A TO263-3 ObsoleteStandard600V71A (DC)2V @ 45AFast Recovery =< 500ns, > 200mA (Io)140ns50µA @ 600V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABPG-TO263-3-55°C ~ 175°C
IDD03E60BUMA1
 Infineon Technologies DIODE GEN PURP 600V 7.3A TO252-3 ObsoleteStandard600V7.3A (DC)2V @ 3AFast Recovery =< 500ns, > 200mA (Io)62ns50µA @ 600V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63PG-TO252-3-55°C ~ 175°C
IDP04E120
 Infineon Technologies DIODE GEN PURP 1.2KV 11.2A TO220 ObsoleteStandard1200V11.2A (DC)2.15V @ 4AFast Recovery =< 500ns, > 200mA (Io)115ns100µA @ 1200V
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Through HoleTO-220-2PG-TO220-2-2-55°C ~ 150°C
IDP06E60
 Infineon Technologies DIODE GEN PURP 600V 14.7A TO220 ObsoleteStandard600V14.7A (DC)2V @ 6AFast Recovery =< 500ns, > 200mA (Io)70ns50µA @ 600V
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Through HoleTO-220-2PG-TO220-2-2-55°C ~ 175°C
IDP09E120
 Infineon Technologies DIODE GEN PURP 1.2KV 23A TO220-2 ObsoleteStandard1200V23A (DC)2.15V @ 9AFast Recovery =< 500ns, > 200mA (Io)140ns100µA @ 1200V
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Through HoleTO-220-2PG-TO220-2-2-55°C ~ 150°C
IDP23E60
 Infineon Technologies DIODE GEN PURP 600V 41A TO220-2 ObsoleteStandard600V41A (DC)2V @ 23AFast Recovery =< 500ns, > 200mA (Io)120ns50µA @ 600V
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Through HoleTO-220-2PG-TO220-2-2-55°C ~ 175°C
IDV04S60CXKSA1
 Infineon Technologies DIODE SCHOTTKY 600V 4A TO220-2FP ObsoleteSilicon Carbide Schottky600V4A (DC)1.9V @ 4ANo Recovery Time > 500mA (Io)0ns50µA @ 600V130pF @ 1V, 1MHzThrough HoleTO-220-2 Full PackPG-TO220-2 Full Pack-55°C ~ 175°C
IDV05S60CXKSA1
 Infineon Technologies DIODE SCHOTTKY 600V 5A TO220-2FP ObsoleteSilicon Carbide Schottky600V5A (DC)1.7V @ 5ANo Recovery Time > 500mA (Io)0ns70µA @ 600V240pF @ 1V, 1MHzThrough HoleTO-220-2 Full PackPG-TO220-2 Full Pack-55°C ~ 175°C
IDV06S60CXKSA1
 Infineon Technologies DIODE SCHOTTKY 600V 6A TO220-2FP ObsoleteSilicon Carbide Schottky600V6A (DC)1.7V @ 6ANo Recovery Time > 500mA (Io)0ns80µA @ 600V280pF @ 1V, 1MHzThrough HoleTO-220-2 Full PackPG-TO220-2 Full Pack-55°C ~ 175°C
IDD03SG60CXTMA1
 Infineon Technologies DIODE SCHOTTKY 600V 3A TO252-3 Discontinued at -Silicon Carbide Schottky600V3A (DC)2.3V @ 3ANo Recovery Time > 500mA (Io)0ns15µA @ 600V60pF @ 1V, 1MHzSurface MountTO-252-3, DPak (2 Leads + Tab), SC-63PG-TO252-3-55°C ~ 175°C
IDB12E120ATMA1
 Infineon Technologies DIODE GEN PURP 1.2KV 28A TO263-3 ObsoleteStandard1200V28A (DC)2.15V @ 12AFast Recovery =< 500ns, > 200mA (Io)150ns100µA @ 1200V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABPG-TO263-3-2-55°C ~ 150°C
IDB23E60ATMA1
 Infineon Technologies DIODE GEN PURP 600V 41A TO263-3 ObsoleteStandard600V41A (DC)2V @ 23AFast Recovery =< 500ns, > 200mA (Io)120ns50µA @ 600V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABPG-TO263-3-2-55°C ~ 175°C
IDV30E60C
 Infineon Technologies DIODE GEN PURP 600V 21A TO22FP ObsoleteStandard600V21A2.05V @ 30AFast Recovery =< 500ns, > 200mA (Io)130ns40µA @ 600V
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Through HoleTO-220-2 Full PackPG-TO220-2 Full Pack-55°C ~ 175°C
IDY10S120XKSA1
 Infineon Technologies DIODE SCHOTTKY 1.2KV 5A TO247HC ObsoleteSilicon Carbide Schottky1200V5A (DC)1.8V @ 10ANo Recovery Time > 500mA (Io)0ns120µA @ 1200V250pF @ 1V, 1MHzThrough HoleTO-247-3 VariantPG-TO247HC-3-55°C ~ 175°C
IDY15S120XKSA1
 Infineon Technologies DIODE SCHOTTKY 1.2KV 7.5A TO247 ObsoleteSilicon Carbide Schottky1200V7.5A (DC)1.8V @ 10ANo Recovery Time > 500mA (Io)0ns180µA @ 1200V375pF @ 1V, 1MHzThrough HoleTO-247-3 VariantPG-TO247HC-3-55°C ~ 150°C
IDH10G65C5XKSA1
 Infineon Technologies DIODE SCHOTTKY 650V 10A TO220-2 Discontinued at -Silicon Carbide Schottky650V10A (DC)1.7V @ 10ANo Recovery Time > 500mA (Io)0ns340µA @ 650V300pF @ 1V, 1MHzThrough HoleTO-220-2PG-TO220-2-2-55°C ~ 175°C
IDH05G65C5XKSA1
 Infineon Technologies DIODE SCHOTTKY 650V 5A TO220-2 Discontinued at -Silicon Carbide Schottky650V5A (DC)1.7V @ 5ANo Recovery Time > 500mA (Io)0ns170µA @ 650V160pF @ 1V, 1MHzThrough HoleTO-220-2PG-TO220-2-2-55°C ~ 175°C
IDH08G65C5XKSA1
 Infineon Technologies DIODE SCHOTTKY 650V 8A TO220-2 Discontinued at -Silicon Carbide Schottky650V8A (DC)1.7V @ 8ANo Recovery Time > 500mA (Io)0ns280µA @ 650V250pF @ 1V, 1MHzThrough HoleTO-220-2PG-TO220-2-2-55°C ~ 175°C
IDW30G65C5FKSA1
 Infineon Technologies DIODE SCHOTTKY 650V 30A TO247-3 Discontinued at -Silicon Carbide Schottky650V30A (DC)1.7V @ 30ANo Recovery Time > 500mA (Io)0ns1.1mA @ 650V860pF @ 1V, 1MHzThrough HoleTO-247-3PG-TO247-3-55°C ~ 175°C
IDW40G65C5FKSA1
 Infineon Technologies DIODE SCHOTTKY 650V 40A TO247-3 Discontinued at -Silicon Carbide Schottky650V40A (DC)1.7V @ 40ANo Recovery Time > 500mA (Io)0ns1.4mA @ 650V1140pF @ 1V, 1MHzThrough HoleTO-247-3PG-TO247-3-55°C ~ 175°C
IDH20G65C5XKSA1
 Infineon Technologies DIODE SCHOTTKY 650V 20A TO220-2 Discontinued at -Silicon Carbide Schottky650V20A (DC)1.7V @ 20ANo Recovery Time > 500mA (Io)0ns700µA @ 650V590pF @ 1V, 1MHzThrough HoleTO-220-2PG-TO220-2-2-55°C ~ 175°C
IDW10G65C5FKSA1
 Infineon Technologies DIODE SCHOTTKY 650V 10A TO247-3 Discontinued at -Silicon Carbide Schottky650V10A (DC)1.7V @ 10ANo Recovery Time > 500mA (Io)0ns400µA @ 650V300pF @ 1V, 1MHzThrough HoleTO-247-3PG-TO247-3-55°C ~ 175°C
IDH03G65C5XKSA1
 Infineon Technologies DIODE SCHOTTKY 650V 3A TO220-2 Discontinued at -Silicon Carbide Schottky650V3A (DC)1.7V @ 3ANo Recovery Time > 500mA (Io)0ns50µA @ 600V100pF @ 1V, 1MHzThrough HoleTO-220-2PG-TO220-2-2-55°C ~ 175°C
IDH06G65C5XKSA1
 Infineon Technologies DIODE SCHOTTKY 650V 6A TO220-2 Discontinued at -Silicon Carbide Schottky650V6A (DC)1.7V @ 6ANo Recovery Time > 500mA (Io)0ns210µA @ 650V190pF @ 1V, 1MHzThrough HoleTO-220-2PG-TO220-2-2-55°C ~ 175°C
IDH04G65C5XKSA1
 Infineon Technologies DIODE SCHOTTKY 650V 4A TO220-2 Discontinued at -Silicon Carbide Schottky650V4A (DC)1.7V @ 4ANo Recovery Time > 500mA (Io)0ns140µA @ 650V130pF @ 1V, 1MHzThrough HoleTO-220-2PG-TO220-2-2-55°C ~ 175°C
IDW12G65C5FKSA1
 Infineon Technologies DIODE SCHOTTKY 650V 12A TO247-3 Discontinued at -Silicon Carbide Schottky650V12A (DC)1.7V @ 12ANo Recovery Time > 500mA (Io)0ns500µA @ 650V360pF @ 1V, 1MHzThrough HoleTO-247-3PG-TO247-3-55°C ~ 175°C
IDW16G65C5FKSA1
 Infineon Technologies DIODE SCHOTTKY 650V 16A TO247-3 Discontinued at -Silicon Carbide Schottky650V16A (DC)1.7V @ 16ANo Recovery Time > 500mA (Io)0ns600µA @ 650V470pF @ 1V, 1MHzThrough HoleTO-247-3PG-TO247-3-55°C ~ 175°C
IDW20G65C5FKSA1
 Infineon Technologies DIODE SCHOTTKY 650V 20A TO247-3 Discontinued at -Silicon Carbide Schottky650V20A (DC)1.7V @ 20ANo Recovery Time > 500mA (Io)0ns700µA @ 650V590pF @ 1V, 1MHzThrough HoleTO-247-3PG-TO247-3-55°C ~ 175°C
IDH09G65C5XKSA1
 Infineon Technologies DIODE SCHOTTKY 650V 9A TO220-2 Discontinued at -Silicon Carbide Schottky650V9A (DC)1.7V @ 9ANo Recovery Time > 500mA (Io)0ns310µA @ 650V270pF @ 1V, 1MHzThrough HoleTO-220-2PG-TO220-2-2-55°C ~ 175°C
IDH16G65C5XKSA1
 Infineon Technologies DIODE SCHOTTKY 650V 16A TO220-2 Discontinued at -Silicon Carbide Schottky650V16A (DC)1.7V @ 16ANo Recovery Time > 500mA (Io)0ns550µA @ 650V470pF @ 1V, 1MHzThrough HoleTO-220-2PG-TO220-2-2-55°C ~ 175°C
BAS1602WH6327XTSA1
 Infineon Technologies DIODE GEN PURP 80V 200MA SCD80-2 ObsoleteStandard80V200mA (DC)1.25V @ 150mASmall Signal =< 200mA (Io), Any Speed4ns1µA @ 75V2pF @ 0V, 1MHzSurface MountSC-80PG-SCD80-2150°C (Max)
BAS7002WH6327XTSA1
 Infineon Technologies DIODE SCHOTTKY 70V 70MA SCD80-2 ObsoleteSchottky70V70mA (DC)1V @ 15mASmall Signal =< 200mA (Io), Any Speed100ps100nA @ 50V2pF @ 0V, 1MHzSurface MountSC-80PG-SCD80-2-55°C ~ 125°C
IDD04S60CBUMA1
 Infineon Technologies DIODE SCHOTTKY 600V 5.6A TO252-3 ObsoleteSilicon Carbide Schottky600V5.6A1.9V @ 4ANo Recovery Time > 500mA (Io)0ns50µA @ 600V130pF @ 1V, 1MHzSurface MountTO-252-3, DPak (2 Leads + Tab), SC-63PG-TO252-3-55°C ~ 175°C
BAS16E6393HTSA1
 Infineon Technologies DIODE GP 80V 250MA SOT23-3 Last Time BuyStandard80V250mA (DC)1.25V @ 150mAFast Recovery =< 500ns, > 200mA (Io)4ns1µA @ 75V2pF @ 0V, 1MHzSurface MountTO-236-3, SC-59, SOT-23-3SOT-23-3150°C (Max)
BAS21E6359HTMA1
 Infineon Technologies DIODE GP 200V 250MA SOT23-3 Last Time BuyStandard200V250mA (DC)1V @ 100mAFast Recovery =< 500ns, > 200mA (Io)50ns100nA @ 200V5pF @ 0V, 1MHzSurface MountTO-236-3, SC-59, SOT-23-3SOT-23-3150°C (Max)
62-0209PBF
 Infineon Technologies DIODE SHOCTTKY Obsolete
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62-0216PBF
 Infineon Technologies DIODE SHOCTTKY Obsolete
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62-0239PBF
 Infineon Technologies DIODE SHOCTTKY Obsolete
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62-0245PBF
 Infineon Technologies DIODE SHOCTTKY Obsolete
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62-0253PBF
 Infineon Technologies DIODE SHOCTTKY Obsolete
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62-0254PBF
 Infineon Technologies DIODE SHOCTTKY Obsolete
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IDH02G65C5XKSA1
 Infineon Technologies DIODE SCHOTTKY 650V 2A TO220-2 Discontinued at -Silicon Carbide Schottky650V2A (DC)1.7V @ 2ANo Recovery Time > 500mA (Io)0ns35µA @ 650V70pF @ 1V, 1MHzThrough HoleTO-220-2PG-TO220-2-55°C ~ 175°C
IDH12G65C5XKSA1
 Infineon Technologies DIODE SCHOTTKY 650V 12A TO220-2 Discontinued at -Silicon Carbide Schottky650V12A (DC)1.7V @ 12ANo Recovery Time > 500mA (Io)0ns190µA @ 650V360pF @ 1V, 1MHzThrough HoleTO-220-2PG-TO220-2-55°C ~ 175°C
IDK02G65C5XTMA1
 Infineon Technologies DIODE SCHOTTKY 650V 2A TO263-2 Discontinued at -Silicon Carbide Schottky650V2A (DC)1.8V @ 2ANo Recovery Time > 500mA (Io)0ns330µA @ 650V70pF @ 1V, 1MHzSurface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABPG-TO263-2-55°C ~ 175°C
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