Infineon Technologies Distributor - Диоды - выпрямители - одиночные - IDK03G65C5XTMA1 IDK04G65C5XTMA1 - CHIPSIC

номер части	Производитель / Марка	Краткое описание	Статус детали	Тип диода	Напряжение - Реверс постоянного тока (Vr) (макс.)	Текущий - средний отрегулированный (Io)	Напряжение - Вперед (Vf) (Макс.) @ Если	скорость	Время обратного восстановления (trr)	Текущий - обратный утечек @ Vr	Емкость @ Vr, F	Тип монтажа	Упаковка / чехол	Пакет устройств поставщика	Рабочая температура - Соединение
IDK03G65C5XTMA1	Infineon Technologies	DIODE SCHOTTKY 650V 3A TO263-2	Discontinued at -	Silicon Carbide Schottky	650V	3A (DC)	1.8V @ 3A	No Recovery Time > 500mA (Io)	0ns	500µA @ 650V	100pF @ 1V, 1MHz	Surface Mount	TO-262	PG-TO263-2	-55°C ~ 175°C
IDK04G65C5XTMA1	Infineon Technologies	DIODE SCHOTTKY 650V 4A TO263-2	Discontinued at -	Silicon Carbide Schottky	650V	4A (DC)	1.8V @ 4A	No Recovery Time > 500mA (Io)	0ns	670µA @ 650V	130pF @ 1V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C
IDK05G65C5XTMA1	Infineon Technologies	DIODE SCHOTTKY 650V 5A TO263-2	Discontinued at -	Silicon Carbide Schottky	650V	5A (DC)	1.8V @ 5A	No Recovery Time > 500mA (Io)	0ns	830µA @ 650V	160pF @ 1V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C
IDK06G65C5XTMA1	Infineon Technologies	DIODE SCHOTTKY 650V 6A TO263-2	Discontinued at -	Silicon Carbide Schottky	650V	6A (DC)	1.8V @ 6A	No Recovery Time > 500mA (Io)	0ns	1.1mA @ 650V	190pF @ 1V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C
IDK08G65C5XTMA1	Infineon Technologies	DIODE SCHOTTKY 650V 8A TO263-2	Discontinued at -	Silicon Carbide Schottky	650V	8A (DC)	1.8V @ 8A	No Recovery Time > 500mA (Io)	0ns	1.4mA @ 650V	250pF @ 1V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C
IDK09G65C5XTMA1	Infineon Technologies	DIODE SCHOTTKY 650V 9A TO263-2	Discontinued at -	Silicon Carbide Schottky	650V	9A (DC)	1.8V @ 9A	No Recovery Time > 500mA (Io)	0ns	1.6mA @ 650V	270pF @ 1V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C
IDK10G65C5XTMA1	Infineon Technologies	DIODE SCHOTTKY 650V 10A TO263-2	Discontinued at -	Silicon Carbide Schottky	650V	10A (DC)	1.8V @ 10A	No Recovery Time > 500mA (Io)	0ns	1.7mA @ 650V	300pF @ 1V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C
IDK12G65C5XTMA1	Infineon Technologies	DIODE SCHOTTKY 650V 12A TO263-2	Discontinued at -	Silicon Carbide Schottky	650V	12A (DC)	1.8V @ 12A	No Recovery Time > 500mA (Io)	0ns	2.1mA @ 650V	360pF @ 1V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C
IDL02G65C5XUMA1	Infineon Technologies	DIODE SCHOTTKY 650V 2A VSON-4	Discontinued at -	Silicon Carbide Schottky	650V	2A (DC)	1.7V @ 2A	No Recovery Time > 500mA (Io)	0ns	35µA @ 650V	70pF @ 1V, 1MHz	Surface Mount	4-PowerTSFN	PG-VSON-4	-55°C ~ 175°C
IDL04G65C5XUMA1	Infineon Technologies	DIODE SCHOTTKY 650V 4A VSON-4	Discontinued at -	Silicon Carbide Schottky	650V	4A (DC)	1.7V @ 4A	No Recovery Time > 500mA (Io)	0ns	70µA @ 650V	130pF @ 1V, 1MHz	Surface Mount	4-PowerTSFN	PG-VSON-4	-55°C ~ 175°C
IDL06G65C5XUMA1	Infineon Technologies	DIODE SCHOTTKY 650V 6A VSON-4	Discontinued at -	Silicon Carbide Schottky	650V	6A (DC)	1.7V @ 6A	No Recovery Time > 500mA (Io)	0ns	110µA @ 650V	190pF @ 1V, 1MHz	Surface Mount	4-PowerTSFN	PG-VSON-4	-55°C ~ 150°C
IDL08G65C5XUMA1	Infineon Technologies	DIODE SCHOTTKY 650V 8A VSON-4	Discontinued at -	Silicon Carbide Schottky	650V	8A (DC)	1.7V @ 8A	No Recovery Time > 500mA (Io)	0ns	140µA @ 650V	250pF @ 1V, 1MHz	Surface Mount	4-PowerTSFN	PG-VSON-4	-55°C ~ 150°C
IDL10G65C5XUMA1	Infineon Technologies	DIODE SCHOTTKY 650V 10A VSON-4	Discontinued at -	Silicon Carbide Schottky	650V	10A (DC)	1.7V @ 10A	No Recovery Time > 500mA (Io)	0ns	180µA @ 650V	300pF @ 1V, 1MHz	Surface Mount	4-PowerTSFN	PG-VSON-4	-55°C ~ 150°C
IDL12G65C5XUMA1	Infineon Technologies	DIODE SCHOTTKY 650V 12A VSON-4	Discontinued at -	Silicon Carbide Schottky	650V	12A (DC)	1.7V @ 12A	No Recovery Time > 500mA (Io)	0ns	190µA @ 650V	360pF @ 1V, 1MHz	Surface Mount	4-PowerTSFN	PG-VSON-4	-55°C ~ 150°C
IRD3CH101DB6	Infineon Technologies	DIODE GEN PURP 1.2KV 200A DIE	Obsolete	Standard	1200V	200A	2.7V @ 200A	Fast Recovery =< 500ns, > 200mA (Io)	360ns	3.6µA @ 1200V	-	Surface Mount	Die	Die	-40°C ~ 175°C
IRD3CH101DD6	Infineon Technologies	DIODE CHIP EMITTER CONTROLLED	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-
IRD3CH101DF6	Infineon Technologies	DIODE CHIP EMITTER CONTROLLED	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-
IRD3CH11DB6	Infineon Technologies	DIODE GEN PURP 1.2KV 25A DIE	Obsolete	Standard	1200V	25A	2.7V @ 25A	Fast Recovery =< 500ns, > 200mA (Io)	190ns	700nA @ 1200V	-	Surface Mount	Die	Die	-40°C ~ 150°C
IRD3CH11DD6	Infineon Technologies	DIODE CHIP EMITTER CONTROLLED	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-
IRD3CH11DF6	Infineon Technologies	DIODE CHIP EMITTER CONTROLLED	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-
IRD3CH16DB6	Infineon Technologies	DIODE CHIP EMITTER CONTROLLED	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-
IRD3CH16DD6	Infineon Technologies	DIODE CHIP EMITTER CONTROLLED	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-
IRD3CH16DF6	Infineon Technologies	DIODE CHIP EMITTER CONTROLLED	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-
IRD3CH24DB6	Infineon Technologies	DIODE CHIP EMITTER CONTROLLED	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-
IRD3CH24DD6	Infineon Technologies	DIODE CHIP EMITTER CONTROLLED	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-
IRD3CH24DF6	Infineon Technologies	DIODE CHIP EMITTER CONTROLLED	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-
IRD3CH31DB6	Infineon Technologies	DIODE CHIP EMITTER CONTROLLED	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-
IRD3CH31DD6	Infineon Technologies	DIODE CHIP EMITTER CONTROLLED	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-
IRD3CH31DF6	Infineon Technologies	DIODE CHIP EMITTER CONTROLLED	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-
IRD3CH42DB6	Infineon Technologies	DIODE GEN PURP 1.2KV 75A DIE	Obsolete	Standard	1200V	75A	2.7V @ 75A	Fast Recovery =< 500ns, > 200mA (Io)	285ns	1.5µA @ 1200V	-	Surface Mount	Die	Die	-40°C ~ 150°C
IRD3CH42DD6	Infineon Technologies	DIODE CHIP EMITTER CONTROLLED	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-
IRD3CH42DF6	Infineon Technologies	DIODE CHIP EMITTER CONTROLLED	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-
IRD3CH53DB6	Infineon Technologies	DIODE GEN PURP 1.2KV 100A DIE	Obsolete	Standard	1200V	100A	2.7V @ 100A	Fast Recovery =< 500ns, > 200mA (Io)	270ns	2µA @ 1200V	-	Surface Mount	Die	Die	-40°C ~ 150°C
IRD3CH53DD6	Infineon Technologies	DIODE CHIP EMITTER CONTROLLED	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-
IRD3CH53DF6	Infineon Technologies	DIODE CHIP EMITTER CONTROLLED	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-
IRD3CH5BD6	Infineon Technologies	DIODE CHIP EMITTER CONTROLLED	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-
IRD3CH5DB6	Infineon Technologies	DIODE GEN PURP 1.2KV 5A DIE	Obsolete	Standard	1200V	5A	2.7V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	96ns	100nA @ 1200V	-	Surface Mount	Die	Die	-40°C ~ 150°C
IRD3CH82DB6	Infineon Technologies	DIODE GEN PURP 1.2KV 150A DIE	Obsolete	Standard	1200V	150A	2.7V @ 150A	Fast Recovery =< 500ns, > 200mA (Io)	355ns	3µA @ 1200V	-	Surface Mount	Die	Die	-40°C ~ 150°C
IRD3CH82DD6	Infineon Technologies	DIODE CHIP EMITTER CONTROLLED	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-
IRD3CH82DF6	Infineon Technologies	DIODE CHIP EMITTER CONTROLLED	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-
IRD3CH9DB6	Infineon Technologies	DIODE GEN PURP 1.2KV 10A DIE	Obsolete	Standard	1200V	10A	2.7V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	154ns	200nA @ 1200V	-	Surface Mount	Die	Die	-40°C ~ 150°C
IRD3CH9DD6	Infineon Technologies	DIODE CHIP EMITTER CONTROLLED	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-
IRD3CH9DF6	Infineon Technologies	DIODE CHIP EMITTER CONTROLLED	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-
IDW10S120FKSA1	Infineon Technologies	DIODE SCHOTTKY 1200V 10A TO247-3	Obsolete	Silicon Carbide Schottky	1200V	10A (DC)	1.8V @ 10A	No Recovery Time > 500mA (Io)	0ns	240µA @ 1200V	580pF @ 1V, 1MHz	Through Hole	TO-247-3	PG-TO247-3	-55°C ~ 175°C
IDW15S120FKSA1	Infineon Technologies	DIODE SCHOTTKY 1200V 15A TO247-3	Obsolete	Silicon Carbide Schottky	1200V	15A (DC)	1.8V @ 15A	No Recovery Time > 500mA (Io)	0ns	305µA @ 1200V	870pF @ 1V, 1MHz	Through Hole	TO-247-3	PG-TO247-3	-55°C ~ 175°C
IDC04S60CEX1SA1	Infineon Technologies	DIODE SIC 600V 4A SAWN WAFER	Obsolete	Silicon Carbide Schottky	600V	4A (DC)	1.9V @ 4A	No Recovery Time > 500mA (Io)	0ns	50µA @ 600V	130pF @ 1V, 1MHz	Surface Mount	Die	Die	-55°C ~ 175°C
IDC04S60CEX7SA1	Infineon Technologies	DIODE GEN PURPOSE SAWN WAFER	Obsolete	-	-	-	-	-	-	-	-	Surface Mount	Die	Sawn on foil	-
IDC05S60CEX1SA1	Infineon Technologies	DIODE SIC 600V 5A SAWN WAFER	Obsolete	Silicon Carbide Schottky	600V	5A (DC)	1.7V @ 5A	No Recovery Time > 500mA (Io)	0ns	70µA @ 600V	240pF @ 1V, 1MHz	Surface Mount	Die	Die	-55°C ~ 175°C
IDC08S60CEX1SA2	Infineon Technologies	DIODE SIC 600V 8A SAWN WAFER	Obsolete	Silicon Carbide Schottky	600V	8A (DC)	1.7V @ 8A	No Recovery Time > 500mA (Io)	0ns	100µA @ 600V	310pF @ 1V, 1MHz	Surface Mount	Die	Die	-55°C ~ 175°C
IDC08S60CEX1SA3	Infineon Technologies	DIODE SIC 600V 8A SAWN WAFER	Obsolete	Silicon Carbide Schottky	600V	8A (DC)	1.7V @ 8A	No Recovery Time > 500mA (Io)	0ns	100µA @ 600V	310pF @ 1V, 1MHz	Surface Mount	Die	Die	-55°C ~ 175°C

Производители для Диоды - выпрямители - одиночные