Manufacturer Part NumberSIS890DN-T1-GE3
Manufacturer / BrandVishay Siliconix
Available Quantity83600 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionMOSFET N-CH 100V 30A 1212-8
Product CategoryTransistors - FETs, MOSFETs - Single
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download SIS890DN-T1-GE3.pdf

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Part Number
SIS890DN-T1-GE3
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
23.5 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
29nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
802pF @ 50V
FET Feature
-
Power Dissipation (Max)
3.7W (Ta), 52W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8
Package / Case
PowerPAK® 1212-8
Weight
Contact us
Application
Email for details
Replacement Part
SIS890DN-T1-GE3

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