Manufacturer Part NumberSIR112DP-T1-RE3
Manufacturer / BrandVishay Siliconix
Available Quantity88000 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionMOSFET N-CHAN 40V
Product CategoryTransistors - FETs, MOSFETs - Single
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download SIR112DP-T1-RE3.pdf

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Part Number
SIR112DP-T1-RE3
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40V
Current - Continuous Drain (Id) @ 25°C
37.6A (Ta), 133A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.96 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
89nC @ 10V
Vgs (Max)
+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds
4270pF @ 20V
FET Feature
-
Power Dissipation (Max)
5W (Ta), 62.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Weight
Contact us
Application
Email for details
Replacement Part
SIR112DP-T1-RE3

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Part Number Manufacturer Description
SIR112DP-T1-RE3 Vishay Siliconix MOSFET N-CHAN 40V