Manufacturer Part NumberSI3900DV-T1-GE3
Manufacturer / BrandVishay Siliconix
Available Quantity19150 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionMOSFET 2N-CH 20V 2A 6-TSOP
Product CategoryTransistors - FETs, MOSFETs - Arrays
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download SI3900DV-T1-GE3.pdf

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Part Number
SI3900DV-T1-GE3
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Active
FET Type
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
2A
Rds On (Max) @ Id, Vgs
125 mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
830mW
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
6-TSOP
Weight
Contact us
Application
Email for details
Replacement Part
SI3900DV-T1-GE3

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