TJ8S06M3L(T6L1,NQ) Toshiba Semiconductor and Storage Distributor
| Manufacturer Part Number | TJ8S06M3L(T6L1,NQ) |
|---|---|
| Manufacturer / Brand | Toshiba Semiconductor and Storage |
| Available Quantity | 142810 Pieces |
| Unit Price | Quote by Email ([email protected]) |
| Brife Description | MOSFET P-CH 60V 8A DPAK-3 |
| Product Category | Transistors - FETs, MOSFETs - Single |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Delivery Time | 1-2 Days |
| Date Code (D/C) | New |
| Datasheet Download | TJ8S06M3L(T6L1,NQ).pdf |
Please fill the below inquiry form, we will reply you the quotation for TJ8S06M3L(T6L1,NQ) within 24 hours.
- Part Number
- TJ8S06M3L(T6L1,NQ)
- Production Status (Lifecycle)
- Contact us
- Manufacturer Lead time
- 6-8 weeks
- Condition
- New & Unused, Original Sealed
- Shipping way
- DHL / FEDEX / UPS / TNT / EMS / Normal Post
- Part Status
- Active
- FET Type
- P-Channel
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 60V
- Current - Continuous Drain (Id) @ 25°C
- 8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V
- Rds On (Max) @ Id, Vgs
- 104 mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id
- 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs
- 19nC @ 10V
- Vgs (Max)
- +10V, -20V
- Input Capacitance (Ciss) (Max) @ Vds
- 890pF @ 10V
- FET Feature
-
- Power Dissipation (Max)
- 27W (Tc)
- Operating Temperature
- 175°C (TJ)
- Mounting Type
- Surface Mount
- Supplier Device Package
- DPAK+
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Weight
- Contact us
- Application
- Email for details
- Replacement Part
- TJ8S06M3L(T6L1,NQ)
Related Components made by Toshiba Semiconductor and Storage
Related Keywords For "TJ8S06"
| Part Number | Manufacturer | Description |
|---|---|---|
| TJ8S06M3L(T6L1,NQ) | Toshiba Semiconductor and Storage | MOSFET P-CH 60V 8A DPAK-3 |