Manufacturer Part NumberRN1131MFV(TL3,T)
Manufacturer / BrandToshiba Semiconductor and Storage
Available Quantity111020 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionTRANSISTOR PREBIAS NPN 0.15W VESM
Product CategoryTransistors - Bipolar (BJT) - Single, Pre-Biased
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download RN1131MFV(TL3,T).pdf

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Part Number
RN1131MFV(TL3,T)
Production Status (Lifecycle)
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Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Active
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
100 kOhms
Resistor - Emitter Base (R2)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
-
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SOT-723
Supplier Device Package
VESM
Weight
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Application
Email for details
Replacement Part
RN1131MFV(TL3,T)

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