GT60N321(Q) Toshiba Semiconductor and Storage Distributor
| Manufacturer Part Number | GT60N321(Q) |
|---|---|
| Manufacturer / Brand | Toshiba Semiconductor and Storage |
| Available Quantity | 30880 Pieces |
| Unit Price | Quote by Email ([email protected]) |
| Brife Description | IGBT 1000V 60A 170W TO3P LH |
| Product Category | Transistors - IGBTs - Single |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Delivery Time | 1-2 Days |
| Date Code (D/C) | New |
| Datasheet Download | GT60N321(Q).pdf |
Please fill the below inquiry form, we will reply you the quotation for GT60N321(Q) within 24 hours.
- Part Number
- GT60N321(Q)
- Production Status (Lifecycle)
- Contact us
- Manufacturer Lead time
- 6-8 weeks
- Condition
- New & Unused, Original Sealed
- Shipping way
- DHL / FEDEX / UPS / TNT / EMS / Normal Post
- Part Status
- Obsolete
- IGBT Type
-
- Voltage - Collector Emitter Breakdown (Max)
- 1000V
- Current - Collector (Ic) (Max)
- 60A
- Current - Collector Pulsed (Icm)
- 120A
- Vce(on) (Max) @ Vge, Ic
- 2.8V @ 15V, 60A
- Power - Max
- 170W
- Switching Energy
-
- Input Type
- Standard
- Gate Charge
-
- Td (on/off) @ 25°C
- 330ns/700ns
- Test Condition
-
- Reverse Recovery Time (trr)
- 2.5µs
- Operating Temperature
- 150°C (TJ)
- Mounting Type
- Through Hole
- Package / Case
- TO-3PL
- Supplier Device Package
- TO-3P(LH)
- Weight
- Contact us
- Application
- Email for details
- Replacement Part
- GT60N321(Q)
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