Manufacturer Part Number2SA965-O(TE6,F,M)
Manufacturer / BrandToshiba Semiconductor and Storage
Available Quantity106230 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionTRANSISTOR PNP 800MA 120V TO226-3
Product CategoryTransistors - Bipolar (BJT) - Single
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download 2SA965-O(TE6,F,M).pdf

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Part Number
2SA965-O(TE6,F,M)
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Obsolete
Transistor Type
PNP
Current - Collector (Ic) (Max)
800mA
Voltage - Collector Emitter Breakdown (Max)
120V
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 100mA, 5V
Power - Max
900mW
Frequency - Transition
120MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Supplier Device Package
LSTM
Weight
Contact us
Application
Email for details
Replacement Part
2SA965-O(TE6,F,M)

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