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Toshiba Semiconductor and Storage |
MOSFET N-CH 200V 7.2A 8SOP |
Active | N-Channel | MOSFET (Metal Oxide) | 200V | 7.2A (Ta) | 10V | 114 mOhm @ 3.6A, 10V | 4V @ 200µA | 7nC @ 10V | ±20V | 600pF @ 100V | - | 1.6W (Ta), 42W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 40A DPAK-3 |
Active | P-Channel | MOSFET (Metal Oxide) | 40V | 40A (Ta) | 6V, 10V | 9.1 mOhm @ 20A, 10V | 3V @ 1mA | 83nC @ 10V | +10V, -20V | 4140pF @ 10V | - | 68W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 48A 8SOP-ADV |
Active | N-Channel | MOSFET (Metal Oxide) | 30V | 48A (Ta) | 4.5V, 10V | 2.2 mOhm @ 24A, 10V | 2.3V @ 1mA | 74nC @ 10V | ±20V | 6200pF @ 10V | - | 1.6W (Ta), 63W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 525V 6A DPAK-3 |
Active | N-Channel | MOSFET (Metal Oxide) | 525V | 6A (Ta) | 10V | 1.3 Ohm @ 3A, 10V | 4.4V @ 1mA | 12nC @ 10V | ±30V | 600pF @ 25V | - | 100W (Tc) | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 7A DPAK-3 |
Active | N-Channel | MOSFET (Metal Oxide) | 500V | 7A (Ta) | 10V | 1.22 Ohm @ 3.5A, 10V | 4.4V @ 1mA | 12nC @ 10V | ±30V | 600pF @ 25V | - | 100W (Tc) | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 30A DPAK-3 |
Active | P-Channel | MOSFET (Metal Oxide) | 60V | 30A (Ta) | 6V, 10V | 21.8 mOhm @ 15A, 10V | 3V @ 1mA | 80nC @ 10V | +10V, -20V | 3950pF @ 10V | - | 68W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 80V 34A SOP |
Active | N-Channel | MOSFET (Metal Oxide) | 80V | 34A (Tc) | 10V | 8 mOhm @ 17A, 10V | 4V @ 500µA | 35nC @ 10V | ±20V | 3000pF @ 40V | - | 1.6W (Ta), 61W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
Active | N-Channel | MOSFET (Metal Oxide) | 100V | 92A (Ta), 70A (Tc) | 4.5V, 10V | 4.1 mOhm @ 35A, 10V | 2.5V @ 1mA | 75nC @ 10V | ±20V | 6.3nF @ 50V | - | 2.5W (Ta), 67W (Tc) | 150°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 2A PW-MOLD |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 2A (Ta) | 10V | 4.3 Ohm @ 1A, 10V | 4.4V @ 1mA | 7nC @ 10V | ±30V | 280pF @ 25V | - | 60W (Tc) | 150°C (TJ) | Through Hole | PW-MOLD2 | TO-251-3 Stub Leads, IPak |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 8A TO220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Ta) | 10V | 850 mOhm @ 4A, 10V | 4V @ 1mA | 16nC @ 10V | ±30V | 800pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 50A DPAK-3 |
Active | P-Channel | MOSFET (Metal Oxide) | 60V | 50A (Ta) | 6V, 10V | 13.8 mOhm @ 25A, 10V | 3V @ 1mA | 124nC @ 10V | +10V, -20V | 6290pF @ 10V | - | 90W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 60A DPAK-3 |
Active | P-Channel | MOSFET (Metal Oxide) | 40V | 60A (Ta) | 6V, 10V | 6.3 mOhm @ 30A, 10V | 3V @ 1mA | 125nC @ 10V | +10V, -20V | 6510pF @ 10V | - | 90W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 60A DPAK-3 |
Active | N-Channel | MOSFET (Metal Oxide) | 60V | 60A (Ta) | 6V, 10V | 8 mOhm @ 30A, 10V | 3V @ 1mA | 60nC @ 10V | ±20V | 2900pF @ 10V | - | 88W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 65A DPAK-3 |
Active | N-Channel | MOSFET (Metal Oxide) | 40V | 65A (Ta) | 6V, 10V | 4.5 mOhm @ 32.5A, 10V | 3V @ 1mA | 63nC @ 10V | ±20V | 2800pF @ 10V | - | 88W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 18A 8SOP |
Active | N-Channel | MOSFET (Metal Oxide) | 30V | 18A (Ta) | 4.5V, 10V | 5.8 mOhm @ 9A, 10V | 2.3V @ 300µA | 34nC @ 10V | ±20V | 2900pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 45A 8SOP-ADV |
Active | P-Channel | MOSFET (Metal Oxide) | 30V | 45A (Ta) | 4.5V, 10V | 3 mOhm @ 22.5A, 10V | 2V @ 1mA | 190nC @ 10V | +20V, -25V | 7420pF @ 10V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 28A 8SOP-ADV |
Active | N-Channel | MOSFET (Metal Oxide) | 30V | 28A (Ta) | 4.5V, 10V | 5.6 mOhm @ 14A, 10V | 2.3V @ 300µA | 34nC @ 10V | ±20V | 2900pF @ 10V | - | 1.6W (Ta), 42W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 80A DPAK-3 |
Active | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Ta) | 6V, 10V | 3.1 mOhm @ 40A, 10V | 3V @ 1mA | 87nC @ 10V | ±20V | 4340pF @ 10V | - | 100W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 80A DPAK-3 |
Active | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Ta) | 6V, 10V | 5.5 mOhm @ 40A, 10V | 3V @ 1mA | 85nC @ 10V | ±20V | 4200pF @ 10V | - | 100W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 4.5A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 450V | 4.5A (Ta) | 10V | 1.75 Ohm @ 2.3A, 10V | 4.4V @ 1mA | 9nC @ 10V | ±30V | 380pF @ 25V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 42A 8SOP-ADV |
Active | N-Channel | MOSFET (Metal Oxide) | 30V | 42A (Ta) | 4.5V, 10V | 2.6 mOhm @ 21A, 10V | 2.3V @ 500µA | 61nC @ 10V | ±20V | 5200pF @ 10V | - | 1.6W (Ta), 57W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 20A 8SOP-ADV |
Active | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta) | 4.5V, 10V | 8.2 mOhm @ 10A, 10V | 2.3V @ 200µA | 23nC @ 10V | ±20V | 1900pF @ 10V | - | 1.6W (Ta), 32W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 16A 8SOP-ADV |
Active | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta) | 4.5V, 10V | 11.4 mOhm @ 8A, 10V | 2.3V @ 200µA | 20nC @ 10V | ±20V | 1600pF @ 10V | - | 1.6W (Ta), 25W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 6.2A DPAK |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 6.2A (Ta) | 10V | 820 mOhm @ 3.1A, 10V | 3.7V @ 310µA | 12nC @ 10V | ±30V | 390pF @ 300V | Super Junction | 60W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 60A DPAK-3 |
Active | P-Channel | MOSFET (Metal Oxide) | 60V | 60A (Ta) | 6V, 10V | 11.2 mOhm @ 30A, 10V | 3V @ 1mA | 156nC @ 10V | +10V, -20V | 7760pF @ 10V | - | 100W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 80A DPAK-3 |
Active | P-Channel | MOSFET (Metal Oxide) | 40V | 80A (Ta) | 6V, 10V | 5.2 mOhm @ 40A, 10V | 3V @ 1mA | 158nC @ 10V | +10V, -20V | 7770pF @ 10V | - | 100W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 7A DPAK |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Ta) | 10V | 600 mOhm @ 3.5A, 10V | 3.7V @ 350µA | 15nC @ 10V | ±30V | 490pF @ 300V | Super Junction | 60W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 25A TO-220AB |
Active | N-Channel | MOSFET (Metal Oxide) | 60V | 25A (Ta) | - | 18 mOhm @ 12.5A, 10V | - | 29nC @ 10V | - | - | - | 60W (Tc) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 55A TO-220 |
Active | N-Channel | MOSFET (Metal Oxide) | 80V | 55A (Tc) | 10V | 12.2 mOhm @ 17.5A, 10V | 4V @ 300µA | 25nC @ 10V | ±20V | 1700pF @ 40V | - | 72W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 10A TO220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Ta) | 10V | 750 mOhm @ 5A, 10V | 4V @ 1mA | 25nC @ 10V | ±30V | 1350pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 2.5A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 2.5A (Ta) | 10V | 2.8 Ohm @ 1.3A, 10V | 4.4V @ 1mA | 9nC @ 10V | ±30V | 380pF @ 25V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 5A TO220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Ta) | 10V | 1.5 Ohm @ 2.5A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 490pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 5.5A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 450V | 5.5A (Ta) | 10V | 1.35 Ohm @ 2.8A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 490pF @ 25V | - | - | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 12A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 500V | 12A (Ta) | 10V | 520 mOhm @ 6A, 10V | 4V @ 1mA | 25nC @ 10V | ±30V | 1350pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 8A DPAK |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 8A (Ta) | 10V | 500 mOhm @ 4A, 10V | 3.7V @ 400µA | 18.5nC @ 10V | ±30V | 570pF @ 300V | Super Junction | 80W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 56A 8SOP-ADV |
Active | N-Channel | MOSFET (Metal Oxide) | 30V | 56A (Ta) | 4.5V, 10V | 1.9 mOhm @ 28A, 10V | 2.3V @ 1mA | 91nC @ 10V | ±20V | 7700pF @ 10V | - | 1.6W (Ta), 70W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 525V 5A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 525V | 5A (Ta) | 10V | 1.5 Ohm @ 2.5A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 540pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 6A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 500V | 6A (Ta) | 10V | 1.4 Ohm @ 3A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 540pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 5A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 550V | 5A (Ta) | 10V | 1.7 Ohm @ 2.5A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 540pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 6.5A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 450V | 6.5A (Ta) | 10V | 1.2 Ohm @ 3.3A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 540pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 2A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 650V | 2A (Ta) | 10V | 3.26 Ohm @ 1A, 10V | 4.4V @ 1mA | 9nC @ 10V | ±30V | 380pF @ 25V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 18A TO-220AB |
Active | N-Channel | MOSFET (Metal Oxide) | 100V | 18A (Ta) | - | 42 mOhm @ 9A, 10V | - | 33nC @ 10V | - | - | - | - | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 5.5A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 550V | 5.5A (Ta) | 10V | 1.48 Ohm @ 2.8A, 10V | 4.4V @ 1mA | 12nC @ 10V | ±30V | 600pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 525V 6A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 525V | 6A (Ta) | 10V | 1.3 Ohm @ 3A, 10V | 4.4V @ 1mA | 12nC @ 10V | ±30V | 600pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 7A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 500V | 7A (Ta) | 10V | 1.22 Ohm @ 3.5A, 10V | 4.4V @ 1mA | 12nC @ 10V | ±30V | 600pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 2.5A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 650V | 2.5A (Ta) | 10V | 2.51 Ohm @ 1.3A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 490pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 5A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 5A (Ta) | 10V | 1.43 Ohm @ 2.5A, 10V | 4.4V @ 1mA | 16nC @ 10V | ±30V | 700pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 4.5A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 650V | 4.5A (Ta) | 10V | 1.67 Ohm @ 2.3A, 10V | 4.4V @ 1mA | 16nC @ 10V | ±30V | 700pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 7A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 550V | 7A (Ta) | 10V | 1.25 Ohm @ 3.5A, 10V | 4.4V @ 1mA | 16nC @ 10V | ±30V | 700pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 8A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 450V | 8A (Ta) | 10V | 900 mOhm @ 4A, 10V | 4.4V @ 1mA | 16nC @ 10V | ±30V | 700pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |