Manufacturer Part NumberMT29E1T208ECHBBJ4-3ES:B TR
Manufacturer / BrandMicron Technology Inc.
Available Quantity45890 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionIC FLASH 1.125T PARALLEL 132VBGA
Product CategoryMemory
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download MT29E1T208ECHBBJ4-3ES:B TR.pdf

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Part Number
MT29E1T208ECHBBJ4-3ES:B TR
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Active
Memory Type
Non-Volatile
Memory Format
FLASH
Technology
FLASH - NAND
Memory Size
1.125Tb (144G x 8)
Clock Frequency
-
Write Cycle Time - Word, Page
-
Access Time
-
Memory Interface
Parallel
Voltage - Supply
2.5 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C (TA)
Mounting Type
-
Package / Case
-
Supplier Device Package
-
Weight
Contact us
Application
Email for details
Replacement Part
MT29E1T208ECHBBJ4-3ES:B TR

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Part Number Manufacturer Description
MT29E1T208ECHBBJ4-3:B Micron Technology Inc. IC FLASH 1.125T PARALLEL VBGA
MT29E1T208ECHBBJ4-3:B TR Micron Technology Inc. IC FLASH 1.125T PARALLEL 132VBGA
MT29E1T208ECHBBJ4-3ES:B TR Micron Technology Inc. IC FLASH 1.125T PARALLEL 132VBGA