Part Number Manufacturer / Brand Brife Description Part StatusIGBT TypeConfigurationVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power - MaxVce(on) (Max) @ Vge, IcCurrent - Collector Cutoff (Max)Input Capacitance (Cies) @ VceInputNTC ThermistorOperating TemperatureMounting TypePackage / CaseSupplier Device Package
Vishay Semiconductor Diodes Division IGBT 600V 114A 658W MTP Active
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Half Bridge600V114A658W3.2V @ 15V, 100A400µA7.1nF @ 30VStandardNo-40°C ~ 150°C (TJ)Chassis Mount12-MTP ModuleMTP
Vishay Semiconductor Diodes Division IGBT 600V 400A SOT227 Active
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Single600V400A961W1.66V @ 15V, 200A1mA16.25nF @ 30VStandardNo-40°C ~ 150°C (TJ)Chassis MountSOT-227-4SOT-227
Vishay Semiconductor Diodes Division IGBT SIP MODULE 600V 13A IMS-2 Active
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Three Phase Inverter600V24A63W1.8V @ 15V, 24A250µA1.6nF @ 30VStandardNo-55°C ~ 150°C (TJ)Through Hole19-SIP (13 Leads), IMS-2IMS-2
Vishay Semiconductor Diodes Division IGBT 1200V 80A 463W MTP ActiveNPTHalf Bridge1200V80A463W4.91V @ 15V, 80A250µA8.28nF @ 30VStandardNo-40°C ~ 150°C (TJ)Chassis Mount12-MTP ModuleMTP
Vishay Semiconductor Diodes Division IGBT 1200V 288A 1087W SOT-227 ObsoleteTrenchSingle1200V288A1087W2.1V @ 15V, 100A100µA
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StandardNo-40°C ~ 150°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227
Vishay Semiconductor Diodes Division IGBT 600V 200A 500W SOT-227 Active
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Single600V200A500W1.9V @ 15V, 100A1mA16.5nF @ 30VStandardNo-55°C ~ 150°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227
Vishay Semiconductor Diodes Division MOD IGBT 3PHASE INV 600V SIP Active
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600V27A63W1.5V @ 15V, 15A250µA2.2nF @ 30VStandardNo-40°C ~ 150°C (TJ)Through Hole19-SIP (13 Leads), IMS-2IMS-2
Vishay Semiconductor Diodes Division IGBT 1200V 149A 862W SOT-227 ActiveNPTSingle1200V149A862W3.8V @ 15V, 75A250µA
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StandardNo-40°C ~ 150°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227
Vishay Semiconductor Diodes Division IGBT 600V 380A 893W SOT-227 ActivePT, TrenchSingle600V380A893W1.3V @ 15V, 100A100µA
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StandardNo-40°C ~ 150°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227
Vishay Semiconductor Diodes Division TRANSISTOR INSLTED GATE BIPOLAR ActiveNPTSingle1200V149A862W3.9V @ 15V, 75A250µA
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StandardNo-40°C ~ 150°C (TJ)Chassis MountSOT-227-4SOT-227
Vishay Semiconductor Diodes Division IGBT 1200V 22A 89W EMIPAK-2B ActiveTrench
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1200V22A89W3.03V @ 15V, 15A75µA1.07nF @ 30VStandardYes150°C (TJ)Chassis MountEMIPAK-2BEMIPAK-2B
Vishay Semiconductor Diodes Division IGBT 650V 150A EMIPAK-2B ActiveTrenchThree Level Inverter650V142A417W2.06V @ 15V, 100A100µA6.6nF @ 30VStandardNo175°C (TJ)Chassis MountEMIPAK-2BEMIPAK-2B
Vishay Semiconductor Diodes Division IGBT 600V 109A 294W EMIPAK-2B ActiveTrenchThree Level Inverter600V109A294W1.93V @ 15V, 75A100µA4.44nF @ 30VStandardYes175°C (TJ)Chassis MountEMIPAK-2BEMIPAK-2B
Vishay Semiconductor Diodes Division IGBT 1200V 61A 216W EMIPAK-1B ActiveTrenchThree Level Inverter1200V61A216W2.52V @ 15V, 30A230µA3.34nF @ 30VStandardYes150°C (TJ)Chassis MountEMIPAK-1BEMIPAK-1B
Vishay Semiconductor Diodes Division OUTPUT SW MODULES - SOT-227 IG ActiveTrenchSingle1200V139A658W2.55V @ 15V, 80A100µA4.4nF @ 25VStandardNo-40°C ~ 150°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227
Vishay Semiconductor Diodes Division OUTPUT SW MODULES - SOT-227 IG ActiveTrenchSingle1200V187A890W2.55V @ 15V, 100A100µA6.15nF @ 25VStandardNo-40°C ~ 150°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227
Vishay Semiconductor Diodes Division IGBT 1200V SOT-227 ActiveTrench Field StopSingle1200V281A1087W2.05V @ 15V, 100A100µA9350pF @ 25VStandardNo-40°C ~ 150°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227
Vishay Semiconductor Diodes Division IGBT 650V 150A EMIPAK-2B ActiveNPTHalf Bridge Inverter650V201A600W2.17V @ 15V, 150A
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StandardYes175°C (TJ)
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ModuleModule
Vishay Semiconductor Diodes Division OUTPUT SW MODULES - SOT-227 IG ActiveTrenchSingle Switch650V167A577W2V @ 15V, 100A50µA6.6nF @ 30VStandardNo-40°C ~ 175°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227
Vishay Semiconductor Diodes Division IGBT 600V 70A LS CHOPPER SOT-227 ActiveNPTSingle600V109A447W2V @ 15V, 35A50µA
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StandardNo-40°C ~ 150°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227
Vishay Semiconductor Diodes Division IGBT 600V 70A HS CHOPPER SOT-227 ActiveNPTSingle600V109A447W2V @ 15V, 35A50µA
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StandardNo-40°C ~ 150°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227
Vishay Semiconductor Diodes Division MOD IGBT 3PHASE INV 600V SIP Active
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No-40°C ~ 150°C (TJ)Through Hole19-SIP (13 Leads), IMS-2IMS-2
Vishay Semiconductor Diodes Division IGBT 1200V 55A LS CHOPPER SOT227 ActiveNPTSingle1200V84A431W
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50µA
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StandardNo-40°C ~ 150°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227
Vishay Semiconductor Diodes Division IGBT 1200V 55A HS CHOPPER SOT227 ActiveNPTSingle1200V84A431W
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50µA
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StandardNo-40°C ~ 150°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227
Vishay Semiconductor Diodes Division IGBT SIP MODULE 600V 6.8A IMS-2 Active
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Three Phase Inverter600V13A36W2V @ 15V, 13A250µA1.1nF @ 30VStandardNo-40°C ~ 150°C (TJ)Through Hole19-SIP (13 Leads), IMS-2IMS-2
Vishay Semiconductor Diodes Division MOD IGBT 3PHASE INV 600V SIP Active
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600V7.2A23W2.2V @ 15V, 3.9A250µA0.53nF @ 30VStandardNo-40°C ~ 150°C (TJ)Through Hole19-SIP (13 Leads), IMS-2IMS-2
Vishay Semiconductor Diodes Division MOD IGBT 3PHASE INV 600V SIP Active
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No-40°C ~ 150°C (TJ)Through Hole19-SIP (13 Leads), IMS-2IMS-2
Vishay Semiconductor Diodes Division MOD IGBT 3PHASE INV 600V SIP Active
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600V13A36W2.2V @ 15V, 6.8A250µA1.1nF @ 30VStandardNo-40°C ~ 150°C (TJ)Through Hole19-SIP (13 Leads), IMS-2IMS-2
Vishay Semiconductor Diodes Division MODULE MTP SWITCH Active
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Three Phase Inverter1200V12A76W
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250µA
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StandardYes-40°C ~ 150°C (TJ)Chassis Mount12-MTP ModuleMTP
Vishay Semiconductor Diodes Division IGBT SIP MODULE 600V 8.8A IMS-2 Active
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Three Phase Inverter600V8.8A23W1.66V @ 15V, 8.8A250µA0.34nF @ 30VStandardNo-40°C ~ 150°C (TJ)Through Hole19-SIP (13 Leads), IMS-2IMS-2
Vishay Semiconductor Diodes Division IGBT SIP MODULE 600V 31 IMS-2 Active
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Three Phase Inverter600V5.7A23W1.93V @ 15V, 3A250µA0.45nF @ 30VStandardNo-40°C ~ 150°C (TJ)Through Hole19-SIP (13 Leads), IMS-2IMS-2
Vishay Semiconductor Diodes Division IGBT SIP MODULE 600V 3.9A IMS-2 Active
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Three Phase Inverter600V7.2A23W1.95V @ 15V, 7.2A250µA0.53nF @ 30VStandardNo-40°C ~ 150°C (TJ)Through Hole19-SIP (13 Leads), IMS-2IMS-2
Vishay Semiconductor Diodes Division MOD IGBT 3PHASE INV 600V SIP Active
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600V20A63W2.1V @ 15V, 10A250µA2.1nF @ 30VStandardNo-40°C ~ 150°C (TJ)Through Hole19-SIP (13 Leads), IMS-2IMS-2
Vishay Semiconductor Diodes Division IGBT 600V 8.8A 23W IMS-2 Active
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600V8.8A23W1.7V @ 15V, 4.8A250µA0.34nF @ 30VStandardNo-40°C ~ 150°C (TJ)Through Hole19-SIP (13 Leads), IMS-2IMS-2
Vishay Semiconductor Diodes Division IGBT SIP MODULE 600V 6A IMS-2 Active
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Three Phase Inverter600V11A36W2V @ 15V, 11A250µA0.74nF @ 30VStandardNo-40°C ~ 150°C (TJ)Through Hole19-SIP (13 Leads), IMS-2IMS-2
Vishay Semiconductor Diodes Division IGBT SIP MODULE 600V 10A IMS-2 Active
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Three Phase Inverter600V20A63W1.84V @ 15V, 20A250µA2.1nF @ 30VStandardNo-40°C ~ 150°C (TJ)Through Hole19-SIP (13 Leads), IMS-2IMS-2
Vishay Semiconductor Diodes Division IGBT 1200V 30A 187W MTP ActiveNPTThree Phase Inverter1200V30A187W3.66V @ 15V, 30A250µA1.95nF @ 30VStandardYes-40°C ~ 150°C (TJ)Chassis Mount12-MTP ModuleMTP
Vishay Semiconductor Diodes Division IGBT Active
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Single600V107A403W2.49V @ 15V, 60A100µA9.5nF @ 30VSingle Phase Bridge RectifierYes150°C (TJ)Through Hole12-MTP ModuleMTP
Vishay Semiconductor Diodes Division IGBT 600V 69A 195W MTP Active
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Full Bridge Inverter600V69A195W3.25V @ 15V, 50A250µA5.42nF @ 30VStandardNo-40°C ~ 150°C (TJ)Chassis Mount16-MTP ModuleMTP
Vishay Semiconductor Diodes Division IGBT 600V 200A 652W SOT-227 ActiveTrenchSingle600V200A652W2V @ 15V, 100A100µA
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StandardNo-40°C ~ 175°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227
Vishay Semiconductor Diodes Division IGBT 1200V 20A 240W MTP ActiveNPTFull Bridge Inverter1200V20A240W4.66V @ 15V, 40A250µA3.79nF @ 30VStandardNo-40°C ~ 150°C (TJ)Chassis Mount16-MTP ModuleMTP
Vishay Semiconductor Diodes Division IGBT 1200V 40A 240W MTP ActiveNPTFull Bridge Inverter1200V40A240W4.66V @ 15V, 40A250µA3.79nF @ 30VStandardNo-40°C ~ 150°C (TJ)Chassis Mount16-MTP ModuleMTP
Vishay Semiconductor Diodes Division IGBT 600V 96A 378W MTP Active
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Single600V96A378W2.15V @ 15V, 40A100µA7.43nF @ 30VSingle Phase Bridge RectifierYes150°C (TJ)Chassis Mount12-MTP ModuleMTP
Vishay Semiconductor Diodes Division IGBT 1200V 100A 446W INT-A-PAK Active
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Single1200V100A446W1.7V @ 15V, 50A (Typ)1mA4.29nF @ 25VStandardNo-40°C ~ 150°C (TJ)Chassis MountINT-A-PAK (3 + 4)INT-A-PAK
Vishay Semiconductor Diodes Division IGBT 600V 100A 347W MTP ActiveNPTHalf Bridge600V100A347W3.4V @ 15V, 140A700µA8nF @ 30VStandardNo-40°C ~ 150°C (TJ)Chassis Mount12-MTP ModuleMTP
Vishay Semiconductor Diodes Division IGBT 600V 121A 462W MTP Active
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600V121A462W2.29V @ 15V, 60A100µA9.5nF @ 30VStandardYes150°C (TJ)Chassis Mount16-MTP ModuleMTP
Vishay Semiconductor Diodes Division TRANSISTOR INSLTED GATE BIPOLAR ActiveNPTSingle600V147A625W2.8V @ 15V, 100A100µA
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StandardNo-40°C ~ 150°C (TJ)Chassis MountSOT-227-4SOT-227
Vishay Semiconductor Diodes Division IGBT 1200V 100A 446W INT-A-PAK Active
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Half Bridge1200V100A446W2.15V @ 15V, 50A5mA4.29nF @ 25VStandardNo150°C (TJ)Chassis MountINT-A-PAK (3 + 4)INT-A-PAK
Vishay Semiconductor Diodes Division IGBT 1200V 100A 405W INT-A-PAK ActiveTrenchHalf Bridge1200V100A405W2.35V @ 15V, 50A5mA6.24nF @ 30VStandardNo175°C (TJ)Chassis MountINT-A-PAK (3 + 4)INT-A-PAK
Vishay Semiconductor Diodes Division IGBT 1200V 200A 658W INT-A-PAK Active
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Single1200V200A658W1.8V @ 15V, 100A (Typ)1mA7.43nF @ 25VStandardNo-40°C ~ 150°C (TJ)Chassis MountINT-A-PakINT-A-PAK
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