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Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 4.8A PS-8 |
Active | P-Channel | MOSFET (Metal Oxide) | 40V | 4.8A (Ta) | 4.5V, 10V | 40 mOhm @ 2.4A, 10V | 2V @ 1mA | 19nC @ 10V | ±20V | 800pF @ 10V | - | 840mW (Ta) | 150°C (TJ) | Surface Mount | PS-8 (2.9x2.4) | 8-SMD, Flat Lead |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 1.8A UFM |
Obsolete | P-Channel | MOSFET (Metal Oxide) | 20V | 1.8A (Ta) | 1.8V, 4V | 158 mOhm @ 800mA, 4V | 1V @ 1mA | - | ±8V | 250pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 40A 3DP 2-7K1A |
Active | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Ta) | 4.5V, 10V | 10.8 mOhm @ 20A, 10V | 2.3V @ 100µA | 17.5nC @ 10V | ±20V | 1150pF @ 10V | - | - | - | Surface Mount | DP | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 40A 3DP 2-7K1A |
Active | N-Channel | MOSFET (Metal Oxide) | 40V | 40A (Ta) | 4.5V, 10V | 11 mOhm @ 20A, 10V | 2.3V @ 200µA | 29nC @ 10V | ±20V | 1920pF @ 10V | - | 47W (Tc) | 150°C (TJ) | Surface Mount | DP | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 3.5A TO220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 3.5A (Ta) | 10V | 2.2 Ohm @ 1.8A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 490pF @ 25V | - | - | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 20A 8SOP |
Discontinued at - | N-Channel | MOSFET (Metal Oxide) | 40V | 20A (Ta) | 4.5V, 10V | 11.3 mOhm @ 10A, 10V | 2.3V @ 200µA | 25nC @ 10V | ±20V | 2110pF @ 10V | - | 1.6W (Ta), 30W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 16A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 450V | 16A | - | 270 mOhm @ 8A, 10V | - | - | - | - | - | - | - | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 16A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 550V | 16A (Ta) | - | 330 mOhm @ 8A, 10V | 4V @ 1mA | 45nC @ 10V | - | 2600pF @ 25V | - | - | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 20A TO-220SIS |
Obsolete | N-Channel | MOSFET (Metal Oxide) | 250V | 20A (Ta) | 10V | 100 mOhm @ 10A, 10V | 3.5V @ 1mA | 55nC @ 10V | ±20V | 2550pF @ 100V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 40A DPAK-3 |
Active | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Ta) | 4.5V, 10V | 10.8 mOhm @ 20A, 10V | 2.3V @ 100µA | 17.5nC @ 10V | ±20V | 1150pF @ 10V | - | - | - | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 40A DPAK-3 |
Active | N-Channel | MOSFET (Metal Oxide) | 100V | 40A (Ta) | 10V | 18 mOhm @ 20A, 10V | 4V @ 1mA | 61nC @ 10V | ±20V | 3110pF @ 10V | - | 93W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 45A DPAK-3 |
Active | N-Channel | MOSFET (Metal Oxide) | 30V | 45A (Ta) | 4.5V, 10V | 9.7 mOhm @ 22.5A, 10V | 2.3V @ 200µA | 25nC @ 10V | ±20V | 1500pF @ 10V | - | - | - | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 4A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 500V | 4A (Ta) | 10V | 2 Ohm @ 2A, 10V | 4.4V @ 1mA | 9nC @ 10V | ±30V | 380pF @ 25V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 525V 4A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 525V | 4A (Ta) | 10V | 1.7 Ohm @ 2A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 490pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 3.5A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 550V | 3.5A (Ta) | 10V | 2.45 Ohm @ 1.8A, 10V | 4.4V @ 1mA | 9nC @ 10V | ±30V | 380pF @ 25V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 4A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 550V | 4A (Ta) | 10V | 1.88 Ohm @ 2A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 490pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 3.7A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 3.7A (Ta) | 10V | 2 Ohm @ 1.9A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 540pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 3.5A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 650V | 3.5A (Ta) | 10V | 1.9 Ohm @ 1.8A, 10V | 4.4V @ 1mA | 12nC @ 10V | ±30V | 600pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 4A DPAK-3 |
Active | N-Channel | MOSFET (Metal Oxide) | 500V | 4A (Ta) | 10V | 2 Ohm @ 2A, 10V | 4.4V @ 1mA | 9nC @ 10V | ±30V | 380pF @ 25V | - | 80W (Tc) | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 3.5A DPAK-3 |
Active | N-Channel | MOSFET (Metal Oxide) | 550V | 3.5A (Ta) | 10V | 2.45 Ohm @ 1.8A, 10V | 4.4V @ 1mA | 9nC @ 10V | ±30V | 380pF @ 25V | - | 80W (Tc) | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 4A DPAK-3 |
Active | N-Channel | MOSFET (Metal Oxide) | 550V | 4A (Ta) | 10V | 1.88 Ohm @ 2A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 490pF @ 25V | - | 80W (Tc) | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 3.5A DPAK-3 |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 3.5A (Ta) | 10V | 2.2 Ohm @ 1.8A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 490pF @ 25V | - | 80W (Tc) | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 3.7A DPAK-3 |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 3.7A (Ta) | 10V | 2 Ohm @ 1.9A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 540pF @ 25V | - | 80W (Tc) | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 50A TO-220AB |
Active | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | - | 8.5 mOhm @ 25A, 10V | - | 54nC @ 10V | - | - | - | - | - | Through Hole | TO-220-3 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 50A TO-220AB |
Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220-3 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 75V 50A TO-220AB |
Active | N-Channel | MOSFET (Metal Oxide) | 75V | 50A (Tc) | - | 12 mOhm @ 25A, 10V | - | 55nC @ 10V | - | - | - | - | - | Through Hole | TO-220-3 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 50A TO-220AB |
Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220-3 | - |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 5.9A VS6 |
Active | N-Channel | MOSFET (Metal Oxide) | 30V | 5.9A (Ta) | 4.5V, 10V | 60 mOhm @ 3A, 10V | 2.3V @ 100µA | 4.8nC @ 10V | ±20V | 300pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 5.3A VS6 |
Active | N-Channel | MOSFET (Metal Oxide) | 40V | 5.3A (Ta) | 4.5V, 10V | 81 mOhm @ 2.7A, 10V | 2.3V @ 100µA | 4.7nC @ 10V | ±20V | 290pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 6.1A VS6 |
Active | N-Channel | MOSFET (Metal Oxide) | 60V | 6.1A (Ta) | 4.5V, 10V | 59 mOhm @ 3.1A, 10V | 2.3V @ 100µA | 12nC @ 10V | ±20V | 830pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 6A VS6 |
Active | N-Channel | MOSFET (Metal Oxide) | 30V | 6A (Ta) | 4.5V, 10V | 20 mOhm @ 3A, 10V | 2.5V @ 1mA | 14nC @ 10V | ±20V | 640pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 6A VS6 |
Active | N-Channel | MOSFET (Metal Oxide) | 20V | 6A (Ta) | 2.5V, 4.5V | 20 mOhm @ 3A, 4.5V | 1.2V @ 200µA | 9nC @ 5V | ±12V | 630pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 10A 8SOP |
Active | P-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 13 mOhm @ 5A, 10V | 2V @ 500µA | 64nC @ 10V | +20V, -25V | 2580pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 11A 8SOP |
Active | P-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 10 mOhm @ 5.5A, 10V | 2V @ 500µA | 56nC @ 10V | +20V, -25V | 2400pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 10A 8SOP |
Obsolete | N-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 13.3 mOhm @ 5A, 10V | 2.3V @ 1mA | 15nC @ 10V | ±20V | 1700pF @ 10V | Schottky Diode (Body) | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 12A 8SOP |
Obsolete | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | 10.1 mOhm @ 6A, 10V | 2.3V @ 1mA | 19nC @ 10V | ±20V | 1800pF @ 10V | Schottky Diode (Body) | - | - | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 24A 8TSON-ADV |
Obsolete | N-Channel | MOSFET (Metal Oxide) | 30V | 24A (Ta) | - | 7 mOhm @ 12A, 10V | 3V @ 200µA | 26nC @ 10V | - | 1270pF @ 10V | - | - | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 13A 8TSON-ADV |
Active | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 11.4 mOhm @ 6.5A, 10V | 2.3V @ 200µA | 20nC @ 10V | ±20V | 1350pF @ 10V | - | 700mW (Ta), 18W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 11A 8TSON-ADV |
Active | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 15 mOhm @ 5.5A, 10V | 2.3V @ 100µA | 15nC @ 10V | ±20V | 1100pF @ 10V | - | 700mW (Ta), 17W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 9A 8TSON-ADV |
Active | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4.5V, 10V | 25 mOhm @ 4.5A, 10V | 2.3V @ 100µA | 9.5nC @ 10V | ±20V | 690pF @ 10V | - | 700mW (Ta), 15W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 50V 100MA USM |
Obsolete | N-Channel | MOSFET (Metal Oxide) | 50V | 100mA (Ta) | - | 20 Ohm @ 10mA, 4V | 1.5V @ 1µA | - | - | 7pF @ 3V | - | 150mW (Ta) | - | Surface Mount | USM | SC-70, SOT-323 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 200MA SMD |
Obsolete | N-Channel | MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 4.5V, 10V | 2.1 Ohm @ 500mA, 10V | 2.5V @ 250µA | - | ±20V | 17pF @ 25V | - | 200mW (Ta) | 150°C (TJ) | Surface Mount | S-Mini | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 80A TO-220 |
Active | N-Channel | MOSFET (Metal Oxide) | 80V | 80A (Tc) | 10V | 8.4 mOhm @ 23A, 10V | 4V @ 500µA | 37nC @ 10V | ±20V | 2500pF @ 40V | - | 103W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 15.8A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 15.8A (Ta) | 10V | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | ±30V | 1350pF @ 300V | Super Junction | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 120V 88A TO-220 |
Active | N-Channel | MOSFET (Metal Oxide) | 120V | 88A (Tc) | 10V | 9.4 mOhm @ 21A, 10V | 4V @ 1mA | 52nC @ 10V | ±20V | 3100pF @ 60V | - | 140W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 15.8A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 15.8A (Ta) | 10V | 190 mOhm @ 7.9A, 10V | 3.7V @ 1.5mA | 43nC @ 10V | ±30V | 1350pF @ 300V | Super Junction | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 11.5A DPAK |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 11.5A (Ta) | 10V | 340 mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25nC @ 10V | ±30V | 890pF @ 300V | Super Junction | 100W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 11.5A IPAK |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 11.5A (Ta) | 10V | 340 mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25nC @ 10V | ±30V | 890pF @ 300V | Super Junction | 100W (Tc) | 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 0.05A USM |
Active | N-Channel | MOSFET (Metal Oxide) | 20V | 50mA (Ta) | 2.5V | 40 Ohm @ 10mA, 2.5V | - | - | 10V | 5.5pF @ 3V | - | 100mW (Ta) | 150°C (TJ) | Surface Mount | SC-70 | SC-70, SOT-323 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 0.2A SMINI |
Active | N-Channel | MOSFET (Metal Oxide) | 30V | 200mA (Ta) | 2.5V | 2 Ohm @ 50MA, 2.5V | 1.5V @ 100µA | - | ±20V | 70pF @ 3V | - | 200mW (Ta) | 150°C (TJ) | Surface Mount | SC-59-3 | TO-236-3, SC-59, SOT-23-3 |